Abstract:In this chapter, thin film GaN-based light emitting diodes (LEDs) fabricated into n-side-up and p-side-up LEDs on mirror-substrate structures using a combination of wafer bonding, laser lift-off and surface texturing techniques were described. The effects of Pd, ITO/Al, NiO/Ag, NiO/Ag/Ni, and NiO/Au/Ag mirrors on the n-side-up GaN/mirror/Si LED properties were studied. It was found that the characteristics of the vertical-conducting n-side-up GaN/mirror/Si LEDs with a NiO/Ag/Ni mirror structure showed the best performance than the other mirror ones. After the thermal anneal process, the specific contact resistance of NiO/Ag/Ni to p-GaN can be reduced. The output power of the n-side-up GaN/mirror/Si LED shows nearly three times in magnitude as compared with that of the original GaN/sapphire sample. On the other hand, the p-side-up GaN LEDs were fabricated using a combination of omni-directional reflector (ODR) and double-sided textured surface (both p-GaN and undoped-GaN) techniques. An Essential Macleod program was used to simulate the optimum thickness of the ODR structure. The reflectivity value of ODR structure used in work can reach 99%. On the top-side textured surface, the p-type GaN with hexagonal cavities was grown under low temperature (LT) conditions using metalorganic chemical vapor deposition. The GaN LED with a suitable LT p-GaN cap layer thickness was also studied. Experimental results indicate that the GaN LED sample with the 200-nm hexagonal cavity GaN layer on the surface exhibits a 50% enhancement in luminance intensity. The luminance efficiency can be improved. This indicates that the thin-film structure can enhance the light extraction efficiency of GaN-based LEDs, especially for large chip sizes.

Fabrication and Characterization of GaN-Based Resonant-Cavity Light-Emitting Diodes with Dielectric and Metal Mirrors

GaN-based Green Resonant-Cavity Light-Emitting Diodes with Al Mirror and Copper Plate

GaN-Based Resonant-Cavity Light-Emitting Diodes Grown on Si

GaN-based Resonant-Cavity Light-Emitting Diode Towards a Vertical-Cavity Surface-Emitting Laser

InGaN-Based Orange-Red Resonant Cavity Light-Emitting Diodes

GaN-on-Si Micro Resonant-Cavity Light-Emitting Diodes with Dielectric and Metal Mirrors

Emission Dynamics of GaN-based Blue Resonant-Cavity Light-Emitting Diodes

Fabrication of GaN-based micro-cavity light emitters

Ultraviolet-B Resonant-Cavity Light-Emitting Diodes with Tunnel Junctions and Dielectric Mirrors

High-output power GaN-LED based on surface plasmon enhancement

Improving the External Quantum Efficiency of High Power GaN Based Flip-Chip LEDs Using Ag/SiO2/DBR/SiO2 Composite ReflectiveStructure

Fabrication and Characterization of GaN-Based Micro-LEDs on Silicon Substrate*

On-wafer fabrication of cavity mirrors for InGaN-based laser diode grown on Si

Vertical InGaN Light-Emitting Diode with Hybrid Distributed Bragg Reflectors

Material Growth and Device Fabrication of GaN-Based Blue-Violet Laser Diodes

GaN-based LEDs with a High Light Extraction Composite Surface Structure Fabricated by a Modified YAG Laser Lift-off Technology and the Patterned Sapphire Substrates

Study of GaN-Based Light-Emitting Diode (LED) With a Hybrid Surface Structure

Thin-GaN LED Materials

Study of GaN-Based LEDs With Hybrid SiO2 Microsphere/Nanosphere AntiReflection Coating as a Passivation Layer by a Rapid Convection Deposition

Study on Bottom Distributed Bragg Reflector Radius and Electric Aperture Radius on Performance Characteristics of GaN-Based Vertical-Cavity Surface-Emitting Laser

High Output Power GaN-Based Green Resonant-Cavity Light-Emitting Diodes With Trapezoidal Quantum Wells