Abstract:An efficient monolithically integrated light source with complementary metal-oxide-semiconductor (CMOS) compatibility remains the missing component to enable Si photonics for various applications. In particular, vertical-cavity-surface-emitting (VCSE) light sources, such as resonant cavity light-emitting diodes (RCLEDs) and vertical-cavity surface-emitting lasers (VCSELs), are strong contenders due to their compact size, circular emission profile with low beam divergence, wafer-scale fabrication compatibility, high bandwidth, and high coupling efficiency to fiber optic cables. We report the first demonstration of 8-in. wafer-scale GeSn/Ge multiple-quantum-well VCSE p-i-n structures and diodes for laser or light-emitting diode (LED) applications in Si photonics by wafer bonding and layer transfer techniques, which are challenging for all-epitaxy routes. The wafer could be 12 in. (300 mm) since the MQW gain medium is grown on a 300 mm Si wafer, and the bonding is wafer-scale. Alternative dielectric layers (SiO2/SiN/SiO2), introduced by wafer bonding, under the emitting structure, serve as the bottom mirror for the vertical cavity. The Ge0.92Sn0.08/Ge MQW layer is utilized to improve the material quality and to confine injected carriers. As a result, more than 8× enhancement of light emission due to the vertical cavity resonance was demonstrated by photoluminescence spectroscopy. Besides, the spectral purity is enhanced by the single-longitudinal-mode cavity. The intensity of light emission is insensitive to the temperature range from 4 to 300 K and even becomes stronger at higher temperatures since the stronger resonant cavity effect at higher temperatures compensates for the drop in light emission efficiency caused by nonradiative centers. The vertical cavity effect on the light emission is further verified by reflectivity spectroscopy and optical simulations. A positive gain can be achieved as indicated by optical gain calculations. Room-temperature electroluminescence and an excellent carrier injection efficiency of the MQW VCSE diode are observed, showing its potential for electrically injected RCLEDs and VCSELs.

GaN-Based Resonant-Cavity Light-Emitting Diodes Grown on Si

GaN-based Green Resonant-Cavity Light-Emitting Diodes with Al Mirror and Copper Plate

Fabrication and Characterization of GaN-Based Resonant-Cavity Light-Emitting Diodes with Dielectric and Metal Mirrors

InGaN-Based Orange-Red Resonant Cavity Light-Emitting Diodes

Emission Dynamics of GaN-based Blue Resonant-Cavity Light-Emitting Diodes

Fabrication and Characterization of GaN-Based Micro-LEDs on Silicon Substrate*

GeSn/Ge Multiquantum-Well Vertical-Cavity Surface-Emitting p-i-n Structures and Diode Emitters on a 200 mm Ge-on-Insulator Platform

Light Output Enhancement of GaN-Based Light-Emitting Diodes Based on AlN/GaN Distributed Bragg Reflectors Grown on Si (111) Substrates

GaN-Based LEDs Grown on Graphene-Covered SiO2/Si (100) Substrate

Fabrication of GaN-based micro-cavity light emitters

Vertical InGaN Light-Emitting Diode with Hybrid Distributed Bragg Reflectors

GaN LEDs on Si Substrate

High Output Power GaN-Based Green Resonant-Cavity Light-Emitting Diodes With Trapezoidal Quantum Wells

Ingan/Gan Blue Light Emitting Diodes Grown on Si(110) and Si(111) Substrates

Unidirectional emission of GaN-on-Si microring laser and its on-chip integration

Study of GaN-Based Light-Emitting Diode (LED) With a Hybrid Surface Structure

Highly-efficient GaN-based light-emitting diode wafers on La 0.3 Sr 1.7 AlTaO6 substrates

Vertical Electrode Structure GaN Based Light Emitting Diodes

InGaN/GaN multi-quantum-well nanowires and light emitting

High-Power GaN-Based Vertical Light-Emitting Diodes on 4-Inch Silicon Substrate

Stripping GaN/InGaN epitaxial films and fabricating vertical GaN-based light-emitting diodes