Abstract:This article presents the results of a numerical analysis of a nitride-based vertical-cavity surface-emitting laser (VCSEL). The analyzed laser features an upper mirror composed of a monolithic high-contrast grating (MHCG) and a dielectric bottom mirror made of SiO2 and Ta2O5 materials. The emitter was designed for light emission at a wavelength of 403 nm. We analyze the influence of the size of the dielectric bottom mirrors on the operation of the laser, including its power–current–voltage (LIV) characteristics. We also study the effect of changing the electrical aperture radius (active area dimensions). We demonstrate that the appropriate selection of these two parameters enables the temperature inside the laser to be reduced, lowering the laser threshold current and increasing its optical power output significantly.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering
What problem does this paper attempt to address?
The main problem that this paper attempts to solve is the design and performance optimization of GaN - based vertical - cavity surface - emitting lasers (GaN - based VCSELs). Specifically, the research focuses on the following aspects:
1. **Influence of the size of the bottom distributed Bragg reflector (DBR)**: Analyzed the influence of the size of the bottom distributed Bragg reflector on the performance of the laser, especially its power - current - voltage (LIV) characteristics.
2. **Influence of the electrical aperture radius**: Studied the influence of the change of the electrical aperture radius (i.e., the size of the active region) on the performance of the laser.
3. **Temperature control and performance improvement**: By reasonably selecting the size of the bottom distributed Bragg reflector and the electrical aperture radius, aimed to reduce the temperature inside the laser, thereby reducing the threshold current and significantly increasing the optical output power.
### Specific problems and goals
- **Influence of the size of the bottom distributed Bragg reflector (DBR)**:
- **Background**: DBR is a key component in VCSELs, used to ensure the effective reflection of light in the resonant cavity. The preparation of DBRs made of nitride materials faces many challenges, such as lattice mismatch and differences in thermal expansion coefficients.
- **Goal**: Through numerical simulation, study the influence of bottom distributed Bragg reflectors of different sizes on the performance of the laser, especially the LIV characteristics.
- **Influence of the electrical aperture radius**:
- **Background**: The electrical aperture radius determines the way current is injected into the active region, affecting the uniformity and efficiency of the laser.
- **Goal**: By changing the electrical aperture radius, optimize the current injection path and improve the performance of the laser.
- **Temperature control and performance improvement**:
- **Background**: Temperature is an important factor affecting the performance of VCSELs. High temperatures can lead to an increase in the threshold current and a decrease in the output power.
- **Goal**: By optimizing the size of the bottom distributed Bragg reflector and the electrical aperture radius, reduce the temperature inside the laser, thereby achieving a lower threshold current and a higher optical output power.
### Numerical simulation method
The research used a self - consistent numerical simulation method, combining thermal, electrical, optical, and gain models. The main equations include:
- **Heat conduction equation**:
\[
\nabla \cdot \left( k(r,z) \nabla T(r,z) \right) = -g(r,z)
\]
where \( T \) is the temperature, \( k \) is the thermal conductivity tensor, and \( g \) is the volume heat source density.
- **Electric potential equation**:
\[
\nabla \cdot \left( \sigma(r,z) \nabla V(r,z) \right) = 0
\]
where \( \sigma \) is the electrical conductivity tensor of the material and \( V \) is the electric potential.
- **Carrier distribution equation**:
\[
D \Delta n(r) - \left( A \cdot n(r) + B \cdot n^2(r) + C \cdot n^3(r) \right) + \frac{j(r)}{e \cdot d} = 0
\]
where \( D \) is the bipolar diffusion coefficient, \( n \) is the carrier concentration, \( A \), \( B \), and \( C \) are the unimolecular, bimolecular, and Auger recombination coefficients respectively, \( e \) is the elementary charge, \( d \) is the thickness of the laser active region, and \( j \) is the current density injected into the active region.
- **Optical gain equation**:
\[
g(\hbar \omega) = \sum_m g_m \left( \epsilon \Lambda (\hbar \omega - \epsilon) \right) d\epsilon
\]
where \( \Lambda \) is a function describing spectral broadening, and the summation is carried out over all state pairs \( m \).
Through these models, researchers can analyze and optimize the performance of GaN - based VCSELs in detail, especially in continuous - wave.