Abstract:Electron leakage from the active region to the p-type region restricts the performance of GaN-based Vertical-Cavity Surface-Emitting Lasers (VCSELs). AlGaN EBL can decrease the leakage current, but also raises the hole injection barrier and reduce the hole injection efficiency. Then, it is important to design EBL structures that can enhance both electron blocking and hole injection. In this study, VCSEL devices with three different EBL, basic structure Al0.6Ga0.4N EBL labeled as Device A, newly proposed 16 nm thick Al0.75-0.80Ga0.25-0.20N EBL labeled as Device B, and 18 nm thick Al0.75-0.80Ga0.25-0.20N EBL labeled as Device C, respectively, are designed and analyzed using PICS 3D simulation. Device A represents a basic VCSEL structure, while Device C incorporates a graded electron-blocking layer (EBL) with adjusted thickness. Through simulation results, it is observed that the introduction of a graded EBL in Device C leads to significant performance enhancements compared to the basic structure of Device A. Specifically, the graded EBL effectively reduces band bending and increases the electron barrier height, thereby improving carrier confinement and reducing electron leakage. Additionally, the utilize of a Graded structure in Device C aids in strain relief at the layout between the QB and EBL, resulting in improved electron-blocking capability and potentially enhanced hole transport characteristics. These findings underscore the importance of EBL grading in optimizing the performance of VCSELs, highlighting its potential for advancing the efficiency and functionality of these semiconductor devices. Power of the device C is being improved upto 4.16%, similarly the conduction band barrier height is improved upto 26.6% which is beneficial for better VCSEL performance as it enhances electron confinement in the active region, leading to increased efficiency and reduced carrier leakage and valance band barrier height decreases upto 6.52% and threshold current is decreased upto 4.8%.

Effects of Lateral Optical Confinement in GaN VCSELs with Double Dielectric DBRs

Effects of the Spatial Nonuniformity of Optical Transverse Modes on the Modulation Response of Vertical-Cavity Surface-Emitting Lasers

A-LOC GaAlAs/GaAs laser and its characteristics

Effects of Different Current Confinement Layers in GaN-based VCSELs

Lattice Temperature Model and Temperature Effects in Oxide-Confined VCSEL’s

The Electrical Turn-on Characteristics of Vertical-Cavity Surface-Emitting Lasers

Resonant-wavelength Control and Optical-Confinement Analysis for Graded SCH VCSELs Using a Self-Consistent Effective-Index Method

Numerical Investigation of Self-Heating Effects of Oxide-Confined Vertical-Cavity Surface-Emitting Lasers

Effects Of Transverse Mode Coupling And Optical Confinement Factor On Gallium-Nitride Based Laser Diode

Application of Buried Tunnel Junction in Long-Wavelength VCSEL Structure

Current spreading structure of GaN-based vertical-cavity surface-emitting lasers

Room-temperature DBR-free VCSEL operation on an InGaN/GaN thin-film platform with a monolithic surface grating

Study of Ga-Polar and N-Polar GaN-Based Green VCSELs by Simulation

Room Temperature Continuous Wave Lasing of GaN-based Green Vertical-Cavity Surface-Emitting Lasers

Long-wavelength vertical-cavity surface-emitting lasers

Reduction of Lasing Threshold of GaN-Based Vertical-Cavity Surface-Emitting Lasers by Using Short Cavity Lengths

Fabrication of GaN-based Vertical Cavity Surface Emitting Lasers

Techniques to reduce thermal resistance in flip‐chip GaN‐based VCSELs

Enhanced Performance of GaN based VCSELs through Graded Electron-Blocking Layer Design

850nm Vertical Cavity Surface Emitting Lasers Utilizing The Self-Planar Mesa Structure

Lateral carrier confinement in miniature lasers using quantum dots