Effects of Different Current Confinement Layers in GaN-based VCSELs

Yan-Hui Chen,Yang Mei,Zhong-Ming Zheng,Rong-Bin Xu,Ya-Chao Wang,Ying,Zhi-Wei Zheng,Hao Long,Yi-Kun Bu,Bao-Ping Zhang
DOI: https://doi.org/10.1063/5.0155159
IF: 1.697
2023-01-01
AIP Advances
Abstract:For GaN-based vertical-cavity surface-emitting lasers (VCSELs), a suitable current confinement layer is essential for high-performance devices. The effect of different current confinement layers, including SiO2, AlN, and diamond, on the performance of GaN-based VCSELs was compared through simulation. The devices' heat dissipation and current confinement characteristics were analyzed based on the electro-opto-thermal model. Considering thermal management, the diamond was a better candidate under high injected current. Benefiting from the excellent heat dissipation, the device with diamond shows a significant improvement in output power and the thermal roll-over current. This work gives a superior option for the current confinement layer and can be helpful for future design and fabrication of high-power GaN-based VCSELs.
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