Abstract:Micro-light emitting diodes (Micro-LEDs) based on III-nitride semiconductors have become a research hotspot in the field of high-resolution display due to its unique advantages. However, the edge effect caused by inductively coupled plasma (ICP) dry etching in Micro-LEDs become significant with respect to the decreased chip size, resulting in a great reduction in device performance. In this article, sector-shaped GaN-based blue Micro-LEDs are designed and fabricated. Additionally, the device performance of different size Micro-LEDs with passivation are investigated with respect to those without passivation. Several methods have been applied to minimize the etching damage near the edge, including acid-base wet etching and SiO2 passivation layer growth. The room temperature photoluminescence (PL) results demonstrate that the light emission intensity of Micro-LEDs can be significantly enhanced by optimized passivation process. PL mapping images show that the overall luminescence of properly passivated Micro-LEDs is enhanced, the uniformity is improved, and the effective luminescence area is increased. The recombination lifetime of carriers in Micro-LEDs are increased by the usage of passivation process, which proves the reduction in non-radiative recombination centers in Micro-LEDs and improved luminescence efficiency. As a result, the internal quantum efficiency (IQE) is improved from 14.9% to 37.6% for 10 μm Micro-LEDs, and from 18.3% to 26.9% for 5 μm Micro-LEDs.

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A Thermal Analysis of the Operation of Microscale, Inorganic Light-Emitting Diodes

Analytical investigations on the thermal properties of microscale inorganic light-emitting diodes on an orthotropic substrate

High-Efficiency, Microscale Gan Light-Emitting Diodes and Their Thermal Properties on Unusual Substrates

Simulation of current spreading for GaN-based light-emitting diodes

Operating Behavior of Micro-Leds on a GaN Substrate at Ultrahigh Injection Current Densities

Thermal Properties of Microscale Inorganic Light-Emitting Diodes in a Pulsed Operation

Thermal Management of Micro-Scale Inorganic Light-Emittng Diodes on an Orthotropic Substrate for Biointegrated Applications

Effect of Current on the Inhomogeneous Light Emission From AlGaInP-Based Flip-Chip Red Mini-LEDs

Investigation on Many-Body Effects in Micro-Leds under Ultra-High Injection Levels

Light‐Emitting Diodes: High‐Efficiency, Microscale GaN Light‐Emitting Diodes and Their Thermal Properties on Unusual Substrates (small 11/2012)

Comprehensive Thermal Characterization Using Ruby R Fluorescence Lines of Sapphire and Gane2-High Raman Mode from Raman Spectra in High-Power Flip-Chip Ingan/Gan Leds

Current Spreading in Gan-Based Light-Emitting Diodes

Thermal Management for Microscale Inorganic Light-Emitting Diodes

Many-body Effects on the High Injection Level Performance for Micro Light Emitting Diode

Heterogeneous Integration of Microscale GaN Light‐Emitting Diodes and Their Electrical, Optical, and Thermal Characteristics on Flexible Substrates

Junction temperature and reliability of high-power flip-chip light emitting diodes

Investigations of Sidewall Passivation Technology on the Optical Performance for Smaller Size GaN-Based Micro-LEDs

Effect of Current spreading layer on Internal Quantum Efficiency and Optical power of Flip chip Gallium Nitride LEDs with circular contacts