Fabrication of 808 Nm Al-containing Semiconductor Laser Diode High Damage Threshold Facet Coating

Zai-jin LI,Li-ming HU,Ye WANG,Ye YANG,Hang-yu PENG,Jin-long ZHANG,Li QIN,Yun LIU,Li-jun WANG
DOI: https://doi.org/10.3969/j.issn.1007-2276.2010.06.011
2010-01-01
Infrared and Laser Engineering
Abstract:The impact of different facet coating methods for high-power 808 nm quantum-well ridged waveguide Al-containing laser diode cleavage on the laser damage threshold in air was investigated.Three methods were compared,that was,front and back facet were coated with no facet coating,reflective film,and passivation layer at first,then with reflective film.The test results of semiconductor laser output power show that laser damage threshold of the passivation layer method is 36% higher than only coated reflective film method,and effectively prevents catastrophic optical mirror damage.And the physical effects between the core of semiconductor laser diode and optical thin film were analyzed.Coating passivation film on its facet is effective to increase laser damage threshold of high-power semiconductor laser diode.
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