Abstract:Deformation measurement in thin films at elevated temperatures is critical for assessing the reliability and performance of microelectronic devices. Digital image correlation (DIC) is a full-field, noncontact deformation measurement technique. However, the traditional DIC approach requires spraying paints for speckles, which is not suitable for high-temperature applications. The aim of this work is to propose a fully customizable speckle preparation method by pulsed laser that can deliver ideal speckle pattern, good contrast and consistency and controllable damage to sample for deformation measurement at elevated temperatures by DIC. Al thin films deposited on Si substrates were used for speckle preparation by FLs at different powers (10 mW, 8 mW, 6 mW and 4 mW). Serial images of speckles were captured as the temperature increased from room temperature to 325 °C, followed by data analysis. A finite element model was built to evaluate the deviation of measured strains in Al thin film from ideal values. To evaluate the damage of laser to sample surface during speckle preparation, a two-temperature model (TTM) was used to evaluate the ideal ablation depth at different laser fluences. Scanning electron microscopy and white light interferometry were also used to examine the surface damage and depth of holes. Based on our findings, speckles prepared by laser irradiation at 8 mW have the best speckle quality and measurement accuracy. The depth of speckles increased linearly with increasing laser power, ranging from 11.8 to 32.9 nm. The ideal depth calculated by the TTM was slightly lower than the experimental results, which can be attributed to the parameters of the model deviating from the actual sample (such as the reflectance of Al). DIC with speckles prepared by an FL can provide good measurement accuracy at elevated temperatures while causing minimal damage to the sample.

Research on temperatures located within facet coating layers along z-axis of semiconductor lasers

Laser-induced Heating of Mid-Infrared High Reflectance Coatings

Facet Coating for 808 Nm Al-containing Semiconductor Laser Diodes

Iv-Vi Semiconductor Growth on Silicon Substrates and New Mid-Infrared Laser Fabrication Methods

Fabrication of 808 Nm Al-containing Semiconductor Laser Diode High Damage Threshold Facet Coating

Comparison of Measurements with Finite-Element Analysis of Silicon-Diaphragm-Based Fiber-Optic Fabry–Perot Temperature Sensors

Noncontact Sub-10 Nm Temperature Measurement in Near-Field Laser Heating

Sub-wavelength Temperature Probing in Near-Field Laser Heating by Particles.

Facet passivation process of high-power laser diodes by plasma cleaning and ZnO film

Etched facet and semiconductor/air DBR facet of a AlGaInP laser diode prepared by focused ion beam milling

Comparison study of the femtosecond laser-induced surface structures on silicon at an elevated temperature.

Effect of Facet Angle on Effective Facet Reflectivity and Operating Characteristics of Quantum Dot Edge Emitting Lasers and Superluminescent Light-Emitting Diodes

Facet effects on generation-recombination currents in semiconductor laser diodes

Enhanced Performance of Tunable External-Cavity 1.5 Mu M Inas/Inp Quantum Dot Lasers Using Facet Coating

Measurements of spectral emissivity, reflectance and transmittance at high temperatures using laser heating and auxiliary light source

Analysis of Thermal Focal Length in LD Corner-Pumped Nd: YAG/YAG Composite Slab Lasers

Finite element analysis of laser-induced transient surface grating fields of diamond/ZnSe

Investigation of Thermomechanical Stress Characteristics in High-Power 808-Nm AlGaAs/GaAs Laser Diode Bars

Deformation measurement in Al thin films at elevated temperatures by digital image correlation with speckles prepared by femtosecond laser

Influence of Resonator Structure of Solid-State Laser on Thermal Focal Length Measurement

Research on Transient Temperature Rise Measurement Method for Semiconductor Devices Based on Photothermal Reflection