Improved Process of GaN-based Ridge Laser Diodes Based on Back-ward Exposure

LU Cimang,WANG Lei,MENG Linghai,KANG Xiangning,HU Xiaodong

DOI: https://doi.org/10.16818/j.issn1001-5868.2012.04.013

2012-01-01

Abstract:In the process of GaN-based laser diodes,a major difficulty suffered is how to make accurate alignment of p-electrode with narrow ridge structure.The process of laser diodes based on back-ward exposure process was designed and verified.A 200 nm thick Al mask was deposited before the erosion of a 2.5 μm wide ridge by ICP and the deposition of a SiO2 isolating layer by PECVD.When the p-electrode was to be deposited,a back-ward exposure was used to transfer the pattern of the ridges to the photoresist to form a window.Then wet-etching was used to erode the SiO2 isolating layer to get through the window,and this process was assisted by the lift-off of buried Al mask.This technic can effectively improve the accuracy of alignment and etching of isolating layer.