Abstract:GaN-based high-power laser diodes (LDs) have attracted tremendous interests in next-generation lighting applications, such as laser display, car laser light. However, high injection current usually brings inevitable drawbacks, including the well-known efficiency droop, Auger recombination and self-heating which obstruct further improvements of GaN-based optoelectrical devices. In this paper, influence of hole overflow at high injection current in an asymmetric GaN-based high-power blue LD has been comprehensively investigated and successfully suppressed by employing a new sandwiched GaN/AlGaN/GaN lower quantum barrier (GAG-LQB). Systematical simulations and measurements of structural and optical properties are carried out. As a result, the V-shaped defects induced by thick n-InGaN waveguide layer are apparently eliminated, which provides a more growth-friendly platform for deposition of the rest epitaxial layers and thus a better crystalline quality is obtained. On the other hand, the modified LD exhibits better photo-electrical properties with slope efficiency (SE) increasing from 0.98 to 1.24 and wall-plug efficiency (WPE) increasing from 18.7% to 20.5% at a high current of 1.5 A and no obvious efficiency droop is observed at a current as high as 2 A compared with the conventional one, because the middle-inserted AlGaN layer could form an extra barrier on the valence band to weaken the hole overflow and enhance the radiative recombination. Furthermore, the in-plane compressive strain induced by InGaN quantum wells (QWs) is also partially compensated by the tensile strain induced by the AlGaN layer. Therefore, the piezoelectric field-induced polarization is effectively alleviated and the wavelength blueshift is reduced from 7 nm to 1.6 nm.

Catastrophic-Optical-Damage-Free InGaN Laser Diodes With Epitaxially Formed Window Structure

Catastrophic-Optical-Damage-Free InGaN Laser Diodes With Epitaxially Formed Window Structure

376 nm High-Power UV-A Laser Diodes With GaN Waveguide

GaN-Based Blue Laser Diodes with 2.2 W of Light Output Power under Continuous-Wave Operation

Structural Defects and Degradation Phenomena in High-Power Pure-Blue InGaN-Based Laser Diodes.

Polyimide-isolated ridge waveguide InGaN/GaN laser diodes based on back-ward exposure

Catastrophic Degradation of Ingan/Gan Blue Laser Diodes

Optical Defect in Gan-Based Laser Diodes Detected by Cathodoluminescence

Influence Of Sandwiched Gan/Algan/Gan Lower Quantum Barrier On Crystallinity And Luminescence Of An Asymmetric Gan-Based High-Power Laser Diode

Performance Enhancement of the GaN-based Laser Diode by Using an Unintentionally Doped GaN Upper Waveguide

Improving optical and electrical properties of InGaN-based green laser diodes by graded-compositional waveguide structure

Enhancing Performance of GaN-based LDs by Using GaN/InGaN Asymmetric Lower Waveguide Layers

Material Growth and Device Fabrication of GaN-Based Blue-Violet Laser Diodes

Defects and Degradation of Nitride-based Laser Diodes

Suppression of electron leakage by inserting a thin undoped InGaN layer prior to electron blocking layer in InGaN-based blue-violet laser diodes.

Structural Defects and Degradation Phenomena in High-Power Pure-Blue InGaN-Based Laser Diodes Analysis of Aged Devices Using Fluorescence Microscopy is Used to Assess the Role That Point Defects Play in Generating Optical Damage and Additional Defects.

Structure Design of InGaN-based Blue Laser Diodes with ITO and Nanoporous GaN Cladding Layers

Realization of InGaN Laser Diodes above 500 Nm by Growth Optimization of the InGaN/GaN Active Region

The Critical Impact of the Waveguide Thickness on the Optical and Threshold Behaviors of InGaN-based Green Laser Diodes

Characterization of GaInN/GaN layers for green emitting laser diodes

A High Power InGaN-Based Blue-Violet Laser Diode Array with a Broad-Area Stripe