Abstract:Gallium nitride (GaN) and its allied binaries InN and AIN as well as their ternary compounds have gained an unprecedented attention due to their wide-ranging applications encompassing green, blue, violet, and ultraviolet (UV) emitters and detectors (in photon ranges inaccessible by other semiconductors) and high-power amplifiers. However, even the best of the three binaries, GaN, contains many structural and point defects caused to a large extent by lattice and stacking mismatch with substrates. These defects notably affect the electrical and optical properties of the host material and can seriously degrade the performance and reliability of devices made based on these nitride semiconductors. Even though GaN broke the long-standing paradigm that high density of dislocations precludes acceptable device performance, point defects have taken the center stage as they exacerbate efforts to increase the efficiency of emitters, increase laser operation lifetime, and lead to anomalies in electronic devices. The point defects include native isolated defects (vacancies, interstitial, and antisites), intentional or unintentional impurities, as well as complexes involving different combinations of the isolated defects. Further improvements in device performance and longevity hinge on an in-depth understanding of point defects and their reduction. In this review a comprehensive and critical analysis of point defects in GaN, particularly their manifestation in luminescence, is presented. In addition to a comprehensive analysis of native point defects, the signatures of intentionally and unintentionally introduced impurities are addressed. The review discusses in detail the characteristics and the origin of the major luminescence bands including the ultraviolet, blue, green, yellow, and red bands in undoped GaN. The effects of important group-II impurities, such as Zn and Mg on the photoluminescence of GaN, are treated in detail. Similarly, but to a lesser extent, the effects of other impurities, such as C, Si, H, O, Be, Mn, Cd, etc., on the luminescence properties of GaN are also reviewed. Further, atypical luminescence lines which are tentatively attributed to the surface and structural defects are discussed. The effect of surfaces and surface preparation, particularly wet and dry etching, exposure to UV light in vacuum or controlled gas ambient, annealing, and ion implantation on the characteristics of the defect-related emissions is described.

Near-Field Spectroscopy Of Gan Blue Light Emission Diode

Ordered nanowire array blue/near-UV light emitting diodes.

Study on Luminescence of GaN Impurity by Near-Field Spectroscopy

Defect Structure and Evolution of GaN-Based Light-Emitting Diodes on Planar and Cone-Patterned Sapphire Substrates

SPATIAL SPECTRAL ANALYSIS IN HIGH BRIGHTNESS GaInN/GaN LIGHT EMITTING DIODES

Study of Electrical and Optical Properties of InGaN/AlGaN Double Heterostructure Blue Light Emitting Diodes

Observation of Optically-Active Metastable Defects in Undoped Gan Epilayers

Optical Defect in Gan-Based Laser Diodes Detected by Cathodoluminescence

Optical Dipole Structure and Orientation of GaN Defect Single-Photon Emitters

Sub-bandgap Excited Photoluminescence Probing of Deep Defect Complexes in GaN Doped by Si, Ge and C Impurities

Structural Analysis in Low-V-defect Blue and Green GaInN/GaN Light Emitting Diodes

Bloch Surface Plasmon Enhanced Blue Emission from Ingan/Gan Light-Emitting Diode Structures with Al-Coated Gan Nanorods

Near-field mapping of the emission distribution in semiconductor microdiscs

Emission Dynamics of GaN-based Blue Resonant-Cavity Light-Emitting Diodes

Study of Defect and Spectral Characteristics of Light Emitting Diodes with Multiple InGaN/GaN Quantum Wells on Patterned Sapphire Substrates

On the origin of Blue Luminescence in Mg doped GaN

Optical Properties and Exciton Localization in Ganas/Gaas

GaN as a Material Platform for Single‐Photon Emitters: Insights from Ab Initio Study

Luminescence properties of defects in GaN

Structure, defects, and optical properties of commensurate GaN/ZnGeN2/GaN double heterojunctions

Quantifying the Transverse-Electric-Dominant 260 nm Emission from Molecular Beam Epitaxy-Grown GaN-Quantum-Disks Embedded in AlN Nanowires: A Comprehensive Optical and Morphological Characterization