Abstract:Microscopic photoluminescence (PL) emission intensity per electron is analyzed by integrating the imaging of PL and microscopic Raman scattering for two phonon modes, exhibiting excited electron density variation. This method enables the carrier dynamics analysis by integrating radiative processes and transports of carriers and thermal energy. Microscopic lattice vibration images of the E2(high) mode (E2H) and another mode of A1(LO) (A1L) or the higher energy branch of LO‐phonon−plasmon coupling mode (LOPC+) in a Ga0.95In0.05N film on a GaN template are obtained by Raman scattering spectroscopy using a 325 nm laser. The increase in temperature by increasing the laser power is obtained from the decrease in the energy of E2H and the theoretical formula comprising two terms based on the mode energy variation of the bulk material and the thermal strain effect. Using the obtained temperature and the energy shift of the LOPC+, the mapping images of the temperature and electron density in the x–y plane are simultaneously obtained. This image provides the spatial variation of photoluminescence (PL) emission efficiency, given as PL intensity per electron. This method enables the quantitative discussion on photo‐emission efficiency even in the regions of low or high carrier density affected by carrier transport. In the investigated area, a region with a lower PL efficiency is found despite a higher electron density and lower temperature increase than the surrounding region. This imaging analysis is feasible in integrating the carrier and thermal energy transports and recombination processes in carrier dynamics study.

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OPTICAL PROPERTIES OF GaInN/GaN MULTI-QUANTUM WELL STRUCTURE AND LIGHT EMITTING DIODE GROWN BY METALORGANIC CHEMICAL VAPOR PHASE EPITAXY

Near-Field Spectroscopy Of Gan Blue Light Emission Diode

Power-Dependent Optical Characterization of the InGaN/GaN-Based Micro-Light-Emitting-Diode (LED) in High Spatial Resolution

Three-dimensional spectrum mapping of bright emission centers: Investigating the brightness-limiting process in Eu-doped GaN red light emitting diodes

High-output power GaN-LED based on surface plasmon enhancement

Photoluminescence Emission Efficiency Analysis Methodology by Integrating Raman Spectroscopy of the A1(LO) and E2(high) Phonons in a GaInN/GaN Heterostructure

An introduction on microscopic-hyperspectral imaging for GaN-based LED investigation

Spatial Mapping on Surface Light Extraction from 2D Photonic Quasicrystals Patterned GaN‐based Light Emitters

Excitation-dependent Spatially Resolved Photoluminescence in InGaN/GaN LEDs with Air-Cavity Arrays Grown on Patterned Sapphire Substrates

Cathodoluminescence Study of InGaN/GaN Quantum-Well LED Structures Grown on a Si Substrate

Analysis of the Quantum Efficiency of Gainn/Gan Light Emitting Diodes in the Range of 390-580 Nm

Cathodoluminescence study of GaN-based film structures

Study on Optical Properties and Internal Quantum Efficiency Measurement of GaN-based Green LEDs

Junction Temperature, Spectral Shift, and Efficiency in GaInN-based Blue and Green Light Emitting Diodes

Dislocation Analysis in Homoepitaxial Gainn/Gan Light Emitting Diode Growth

Electroluminescence Induced by Photoluminescence Excitation in GaInN/GaN Light-Emitting Diodes

Optical and Spatial Resolved Cathodoluminescence Study of Phase Separation in Green InGaN Sandwiched Structure Grown on GaN Nanorods by MOCVD

Correlating cathodoluminescence and scanning transmission electron microscopy for InGaN platelet nano-LEDs

Nanoscale Mapping of Light Emission in Nanospade-Based InGaAs Quantum Wells Integrated on Si(100): Implications for Dual Light-Emitting Devices

Spontaneous Emission Mechanisms of GaInAsN∕GaAs Quantum Dot Systems