Abstract:Color-mixed (cm) light-emitting diodes (LEDs) are theoretically the most efficient white light emitters, projected to improve white light luminous efficacy by 34% compared to incumbent phosphor converted LEDs. Since white light technology is globally pervasive and essential, small improvements in LED technology can result in energy savings. However, cm-LEDs are not yet realized due to poor efficacy in green and amber emitting materials, a spectral region colloquially referred to as the green gap. ZnGeN2 is nearly isostructural and closely lattice-matched to GaN and can be heteroepitaxially integrated with existing GaN devices; ZnGeN2/GaN hybrid structures are theorized to emit green (∼530 nn) light with a spontaneous emission rate 4.6-4.9 times higher than traditional InGaN LEDs when incorporated into III-N LED structures. In this report we demonstrate the molecular beam epitaxy (MBE) growth of GaN and ZnGeN2 superlattices, an important step towards realizing multiple quantum well structures required for efficient LEDs. Elemental analysis, including atom probe tomography, shows that Ga and Ge are observed in both ZnGeN2 and GaN layers, degrading the structural uniformity. The lack of elemental abruptness also leads to increased defect luminescence and reabsorption of band edge luminescence. The source of unintentional Ga distributed throughout the ZnGeN2 layers was identified as excess flux escaping from around the closed MBE shutter. The source of unintentional Ge, which tended to incorporate as a single delta-doped layer in GaN, was identified as Ge riding along the cyclical metal-rich Ga adlayer used for high quality GaN, incorporating during subsequent nitrogen-rich growth step. Modifying the growth strategy results in improved structural quality, elemental abruptness, and luminescence response. This realization of structurally and elementally abrupt interfaces demonstrates the potential of heteroepitaxially integrated binary and ternary nitrides for energy-relevant devices.

Correlating cathodoluminescence and scanning transmission electron microscopy for InGaN platelet nano-LEDs

Cathodoluminescence investigations of dark-line defects in platelet-based InGaN nano-LED structures

Characterisation of Defects at Non-Polar GaN/InGaN Junctions in Novel Materials for Application in Light Emitting Diodes

From InGaN pyramids to micro-LEDs characterized by cathodoluminescence

Structural and optical analyses for InGaN-based red micro-LED

Structural Analysis in Low-V-defect Blue and Green GaInN/GaN Light Emitting Diodes

Multimicroscopy of cross-section zincblende GaN LED heterostructure

Modeling the electrical characteristics of InGaN/GaN LED structures based on experimentally-measured defect characteristics

Defect Structure and Evolution of GaN-Based Light-Emitting Diodes on Planar and Cone-Patterned Sapphire Substrates

A Novel Way to Fill Green Gap of GaN-Based LEDs by Pinning Defects in Nanorod Array.

Size-dependent sidewall defect effect of GaN blue micro-LEDs by photoluminescence and fluorescence lifetime imaging

Quantifying the Transverse-Electric-Dominant 260 nm Emission from Molecular Beam Epitaxy-Grown GaN-Quantum-Disks Embedded in AlN Nanowires: A Comprehensive Optical and Morphological Characterization

Atomic-Scale Characterization of Extended Defects in Wurtzite GaN Heterostructures

Effect of extended defects on AlGaN QDs for electron-pumped UV-emitters

Cathodoluminescence as an Effective Probe of Carrier Transport and Deep Level Defects in Droop-Mitigating InGaN/GaN Quantum Well Heterostructures

Improving luminescence response in ZnGeN2/GaN superlattices: defect reduction through composition control

Unraveling the "Green Gap" problem: The role of random alloy fluctuations in InGaN/GaN light emitting diodes

Cathodoluminescence of stacking fault bound excitons for local probing of the exciton diffusion length in single GaN nanowires

Unlocking the origin of compositional fluctuations in InGaN light emitting diodes

Comparative Analysis of Microstructure, Electrical and Optical Performance in Sidewall Etching Process for GaN-Based Green Micro-LED

Cathodoluminescence Study of InGaN/GaN Quantum-Well LED Structures Grown on a Si Substrate