Abstract:In this study, the growth behavior of Indium gallium nitride (InGaN)-based nanocolumn arrays was investigated, and red emission nanocolumn micro-light emitting diodes (μ-LEDs) were fabricated. The internal structure of the InGaN/GaN superlattice (SL) layer under the multiple-quantum-well (MQW) active layers was evaluated using scanning transmission electron microscopy (STEM) analysis. It was revealed that the InGaN crystal plane at the top of the nanocolumn changed from the c-plane, (1-102) plane, to the (10-11) plane as the number of SL pairs increased. A semipolar (10-11) plane was completely formed on top of the nanocolumn by growing InGaN/GaN SLs over 15-20 pairs, where the InGaN/GaN SL layers were uniformly piled up, maintaining the (10-11) plane. Therefore, when InGaN/AlGaN MQWs were grown on the (10-11) plane InGaN/GaN SL layer, the growth of the (10-11) plane semipolar InGaN active layers was observed in the high-angle annular dark field (HAADF)-STEM image. Moreover, the acute nanocolumn top of the (10-11) plane of the InGaN/GaN SL underlayer did not contribute to the formation of the c-plane InGaN core region. Red nanocolumnμ-LEDs with anφ12μm emission window were fabricated using the (10-11) plane MQWs to obtain the external quantum efficiency of 1.01% at 51 A cm-2. The process of nanocolumnμ-LEDs suitable for the smaller emission windows was provided, where the flat p-GaN contact layer contributed to forming a fine emission window ofφ5μm.

Structural and optical analyses for InGaN-based red micro-LED

Investigations on the high performance of InGaN red micro-LEDs with single quantum well for visible light communication applications

InGaN-based Red Light-Emitting Diodes: from Traditional to Micro-Leds

Effect of V-Shaped pits on optical properties of GaN-Based green light-emitting diodes

Metal Organic Vapor Phase Epitaxy of High-Indium-composition InGaN Quantum Dots Towards Red Micro-Leds

Efficient InGaN-based Red Light-Emitting Diodes by Modulating Trench Defects

From InGaN pyramids to micro-LEDs characterized by cathodoluminescence

Study on the effect of size on InGaN red micro-LEDs

Internal quantum efficiency improvement of InGaN-based red LED by using double V-pits layers as strain relief layer

Structrual and Optical Properties Research of the InGaN/GaN MQW Emiting Red-Orange

Performance Improvement of InGaN Red Light‐Emitting Diode by Using V‐Pits Layer and Step‐Graded GaN Barrier

Correlating cathodoluminescence and scanning transmission electron microscopy for InGaN platelet nano-LEDs

InGaN/GaN superlattice underlayer for fabricating of red nanocolumn μ-LEDs with (10-11) plane InGaN/AlGaN MQWs

Advancing high-performance visible light communication with long-wavelength InGaN-based micro-LEDs

Modified Distributed Bragg Reflectors for Color Stability in InGaN Red Micro-LEDs

The efficiency enhancement of InGaN-based red LEDs with thick GaN underlying layers

MOVPE-grown InGaN Quantum-Well Red Micro-Leds

Analysis of the Mechanisms by Which Sputtered AlN Nucleation Layers Enhance the Performance of Red InGaN-based LEDs

Improved Performance of InGaN-based Red Light-Emitting Diodes by Micro-Hole Arrays

Improving Performances of Ultra-Small Size (1–20 Μ M) InGaN Red Micro-Leds by Growing on Freestanding GaN Substrates

Structural Analysis in Low-V-defect Blue and Green GaInN/GaN Light Emitting Diodes