Internal quantum efficiency improvement of InGaN-based red LED by using double V-pits layers as strain relief layer

Chuanyu Jia,Yuan Li,Qi Wang

DOI: https://doi.org/10.1364/oe.533052

IF: 3.8

2024-09-26

Optics Express

Abstract:Chuanyu Jia, Yuan Li, Qi Wang Micro/mini light emitting diodes (LEDs) based on AlInGaN material system have vast potential in display applications. Nevertheless, the low ... [Opt. Express 32, 36489-36499 (2024)]

optics

What problem does this paper attempt to address?

Performance Improvement of InGaN Red Light‐Emitting Diode by Using V‐Pits Layer and Step‐Graded GaN Barrier

Chuanyu Jia,Chunliang Shen,Qi Wang

DOI: https://doi.org/10.1002/pssa.202300086

2023-01-01

Abstract:The carrier-transport properties of InGaN red light-emitting diode (LED) with V-pits layer and step-graded GaN barrier are investigated. By using V-pits layer technology, the inverted pyramid-shaped V-pit layer forms an energy barrier around the dislocation, inhibits the lateral diffusion of electrons from active layer to the dislocation center, and reduces the probability of non-radiative recombination rate of electrons and holes. With the increase of the horizontal opening width of the V-pits layer, the uniformity of holes concentration distribution in InGaN/GaN multiple quantum well (MQWs)-active region is improved significantly. Compared with the traditional InGaN/GaN MQWs-active region with fixed well/barrier thickness, step gradient GaN barrier is adopted in the active layer of InGaN red LED, which can reduce the length of the transmission path and improve the injection efficiency of holes into deep quantum wells close to the n-type region. At injection current density of 200 A cm(-2), the internal quantum efficiency of LED D with V-pits layer and step-graded GaN barrier is improved by 56.4% as compared with that of reference LED A. In addition, the efficiency droop of LED D can also be effectively alleviated as compared with that of reference LED A.
Analysis of the Mechanisms by Which Sputtered AlN Nucleation Layers Enhance the Performance of Red InGaN-based LEDs

Kun Xing,Zhengxian Jin,Zhihu Xia,Junwei Hu,Xiaoping Yang,Yimeng Sang,Tao,Zhe Zhuang,Rong Zhang,Bin Liu

DOI: https://doi.org/10.1364/oe.531223

IF: 3.8

2024-01-01

Optics Express

Abstract:This work proposed to modulate the strain of underlying GaN layers using different thicknesses of sputtered AlN nucleation layer to achieve long-wavelength red InGaN mini-light- emitting diodes (mini-LEDs). The increase in thickness of sputtered AlN from 15 nm to 60 nm could reduce the compressive strain in epitaxial GaN layers, which led to a shift in the peak wavelength of InGaN LEDs ranging from 633 nm to 656 nm at 1 A/cm2. 2 . However, a significant decrease in external quantum efficiency (EQE) was observed when the sputtered AlN thickness was increased from 45 nm to 60 nm. We found that the EQE and peak wavelength (PW) of the red mini-LEDs with 45-nm sputtered AlN at 1 A/cm2 2 were 8.5% and 649 nm, respectively. The study revealed that varying the thickness of AlN nucleation layers could extend the emission of red InGaN mini-LEDs toward longer wavelengths with a slight EQE loss. (c) 2024 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement
Structural and optical analyses for InGaN-based red micro-LED

Fu-He Hsiao,Wen-Chien Miao,Yu-Heng Hong,Hsin Chiang,I-Hung Ho,Kai-Bo Liang,Daisuke Iida,Chun-Liang Lin,Hyeyoung Ahn,Kazuhiro Ohkawa,Chiao-Yun Chang,Hao-Chung Kuo

DOI: https://doi.org/10.1186/s11671-023-03853-1

2023-05-25

Abstract:This study presents a comprehensive analysis of the structural and optical properties of an InGaN-based red micro-LED with a high density of V-shaped pits, offering insights for enhancing emission efficiency. The presence of V-shaped pits is considered advantageous in reducing non-radiative recombination. Furthermore, to systematically investigate the properties of localized states, we conducted temperature-dependent photoluminescence (PL). The results of PL measurements indicate that deep localization in the red double quantum wells can limit carrier escape and improve radiation efficiency. Through a detailed analysis of these results, we extensively investigated the direct impact of epitaxial growth on the efficiency of InGaN red micro-LEDs, thereby laying the foundation for improving efficiency in InGaN-based red micro-LEDs.
633-Nm InGaN-based Red LEDs Grown on Thick Underlying GaN Layers with Reduced In-Plane Residual Stress

Daisuke Iida,Zhe Zhuang,Pavel Kirilenko,Martin Velazquez-Rizo,Mohammed A. Najmi,Kazuhiro Ohkawa

DOI: https://doi.org/10.1063/1.5142538

IF: 4

2020-01-01

Applied Physics Letters

Abstract:This work investigates the influence of residual stress on the performance of InGaN-based red light-emitting diodes (LEDs) by changing the thickness of the underlying n-GaN layers. The residual in-plane stress in the LED structure depends on the thickness of the underlying layer. Decreased residual in-plane stress resulting from the increased thickness of the underlying n-GaN layers improves the crystalline quality of the InGaN active region by allowing for a higher growth temperature. The electroluminescence intensity of the InGaN-based red LEDs is increased by a factor of 1.3 when the thickness of the underlying n-GaN layer is increased from 2 to 8 μm. Using 8-μm-thick underlying n-GaN layers, 633-nm-wavelength red LEDs are realized with a light-output power of 0.64 mW and an external quantum efficiency of 1.6% at 20 mA. The improved external quantum efficiency of the LEDs can be attributed to the lower residual in-plane stress in the underlying GaN layers.
Efficient InGaN-based Red Light-Emitting Diodes by Modulating Trench Defects

Z. Pan,Z. Chen,H. Zhang,H. Yang,Y. Chen,J. Nie,C. Deng,B. Dong,D. Wang,Y. Li,H. Lin,W. Chen,F. Jiao,X. Kang,C. Jia,Z. Liang,Q. Wang,G. Zhang,B. Shen

2023-12-29

Abstract:Trench defects in multi-quantum wells (MQWs) have been considered as flawed structures that severely degrade the internal quantum efficiency of light-emitting diodes (LEDs) in the past. In this research, trench defects are innovatively modulated into the structure to enhance the efficiency of red InGaN LEDs. Specifically, dual-color MQWs structures are grown with green MQWs at the bottom and red MQWs at the top. When high-density trench defects are introduced into the green MQWs, the upper red MQWs exhibit a significant wavelength redshift of 68 nm and approximately 6-fold luminescence enhancement compared to those without trench defects. The wavelength redshift is attributed to the increased indium incorporation due to the strain relaxation effect of trench defects. Moreover, the luminescence enhancement originates from the strong emission of the red MQWs inside trench defects. The mechanisms behind the superior luminescent properties of red MQWs within trench defects are explored in detail. Red InGaN LEDs with an internal quantum efficiency of 16.4% are achieved by modulating the trench defects. The method of achieving InGaN-based red emission by introducing trench defects is simple and reproducible, requiring no additional substrate designs. This research provides a novel pathway toward achieving high-efficiency red InGaN LEDs.

Materials Science
The efficiency enhancement of InGaN-based red LEDs with thick GaN underlying layers

Daisuke Iida,Zhe Zhuang,Pavel Kirilenko,Martin Velazquez-Rizo,Mohammed A. Najmi,Kazuhiro Ohkawa

DOI: https://doi.org/10.1117/12.2577028

2021-01-01

Abstract:We obtained the EL intensity enhancement by a factor of 1.3 with increasing of n-GaN thickness from 2 to 8 µm. We achieved a light output, forward voltage, FWHM and external quantum efficiency of 0.64 mW, 3.3 V, 59 nm, and 1.6% at 20 mA, respectively. Particularly, the wall plug efficiency was 1.0%, which is comparable with the state-of-the-art InGaN-based red LEDs. The reduction of the in-plane compressive stress by the GaN underlying layers appears to be crucial for enhancing the light output of InGaN-based red LEDs on conventional sapphire substrates.
Performance Improvement of GaN-based LEDs with Step Stage InGaN/GaN Strain Relief Layers in GaN-based Blue LEDs.

Chuanyu Jia,Tongjun Yu,Huimin Lu,Cantao Zhong,Yongjian Sun,Yuzhen Tong,Guoyi Zhang

DOI: https://doi.org/10.1364/oe.21.008444

IF: 3.8

2013-01-01

Optics Express

Abstract:The performance of nitride-based LEDs was improved by inserting dual stage and step stage InGaN/GaN strain relief layer (SRL) between the active layer and n-GaN template. The influences of step stage InGaN/GaN SRL on the structure, electrical and optical characteristics of GaN-based LEDs were investigated. The analysis of strain effect on recombination rate based k·p method indicated 12.5% reduction of strain in InGaN/GaN MQWs by inserting SRL with step stage InGaN/GaN structures. The surface morphology was improved and a smaller blue shift in the electroluminescence (EL) spectral with increasing injection current was observed for LEDs with step stage SRL compared with conventional LEDs. The output power of LEDs operating at 20 mA was about 15.3 mW, increased by more than 108% by using step stage InGaN/GaN SRL, which shows great potential of such InGaN/GaN SRL in modulating InGaN/GaN MQWs optical properties based on its strain relief function.
Demonstration of 651?nm InGaN-based red light-emitting diode with an external quantum efficiency over 6% by InGaN/AlN strain release interlayer

kun xing,Junwei Hu,Zhengwei Pan,Zhihu Xia,Zhengxian Jin,Liancheng Wang,Xiaolong Jiang,Haifeng Wang,Hong Zeng,Xiujuan Wang

DOI: https://doi.org/10.1364/oe.518741

IF: 3.8

2024-03-14

Optics Express

Abstract:Kun Xing, Junwei Hu, Zhengwei Pan, Zhihu Xia, Zhengxian Jin, Liancheng Wang, Xiaolong Jiang, Haifeng Wang, Hong Zeng, Xiujuan Wang This work reports a high-performance InGaN-based red-emitting LED with a strain-release interlayer (SRI) consisting of an InGaN ... [Opt. Express 32, 11377-11386 (2024)]

optics
Metal Organic Vapor Phase Epitaxy of High-Indium-composition InGaN Quantum Dots Towards Red Micro-Leds

Luming Yu,Lei Wang,Peilong Yang,Zhibiao Hao,Jiadong Yu,Yi Luo,Changzheng Sun,Bing Xiong,Yanjun Han,Jian Wang,Hongtao LI,Lai Wang

DOI: https://doi.org/10.1364/ome.465134

2022-01-01

Optical Materials Express

Abstract:Micro-scale light-emitting diodes (micro-LEDs) are regarded as the next generation display technology. Compared to blue and green ones, InGaN-based red micro-LEDs require higher indium composition in their active region, which is quite challenging for material growth. Here, high-indium-composition InGaN quantum dots (QDs) with a density of 3 × 1010 cm-2 are self-assembly grown by metal-organic vapor phase epitaxy (MOVPE) based on a precursor-alternate-admittance method. The growth mechanism is systematically studied, and consequently a 613-nm red QDs sample with an internal quantum efficiency (IQE) of 12% is demonstrated. Furthermore, when micro-LEDs based on these red InGaN QDs with a chip size of 1-20 µm are fabricated, an electroluminescence blueshift to yellow and green is observed. The 20-µm and 1-µm micro-LEDs show 4.92% and 1.78% external quantum efficiency (EQE) at 0.3 and 20 A/cm2, respectively. By introducing multiple quantum wells (MQWs) pre-strained layer beneath the QD layers, a 10-µm micro-LED with 638 nm emission wavelength is demonstrated, with a price of reduced EQE to 0.03% at 10 A/cm2.
Green and Red Light-Emitting Diodes Based on Multilayer InGaN/GaN Dots Grown by Growth Interruption Method

Wenbin Lv,Lai Wang,Jiaxing Wang,Yuchen Xing,Jiyuan Zheng,Di Yang,Zhibiao Hao,Yi Luo

DOI: https://doi.org/10.7567/jjap.52.08jg13

IF: 1.5

2013-01-01

Japanese Journal of Applied Physics

Abstract:We have successfully implemented green and red light-emitting diodes (LEDs) based on InGaN/GaN quantum dots (QDs) grown by controlling the process of the growth interruption method using metal organic vapor phase epitaxy (MOVPE). It is found that the three-step growth interruption method and the underlying InGaN/GaN superlattice structure are beneficial for achieving greater indium incorporation in InGaN QDs. As a result, green and red LEDs with electroluminescence (EL) peak energies of 2.28 eV at 20 mA and 1.70 eV at 80 mA, respectively, are demonstrated. The EL emission energy blue shift of the green QD LEDs is 140 meV as injection current increases from 5 to 50 mA, while that of the red LED is 70 meV as injection current increases from 75 to 100 mA.
Efficiency enhancement mechanism of piezoelectric effect in long-wavelength InGaN-based LED

Li Liu,Qingqing Feng,Yu Zhang,Xiaolu Zhu,Lanli Chen,Zhihua Xiong

DOI: https://doi.org/10.1039/d3cp02934d

IF: 3.3

2023-09-26

Physical Chemistry Chemical Physics

Abstract:Improving the luminescence efficiency of InGaN-based long-wavelength LEDs remains a huge challenge for micro-LED full-color displays. The strain-induced piezoelectric effect is an effective measure to modulate the carrier redistribution at InGaN/GaN heterointerfaces. Our theoretical results reveal that the hole injection is significantly improved by the diminution of the valence band offset (VBO) of InGaN/GaN heterointerfaces along the [0001] direction. Inversely, the VBO increases along the [000-1] direction. The energy band structures showed that the tensile strain of GaN film grown on Si substrate could weaken the internal electric field of the InGaN well layer leading to a flatting of the energy band, which increases the overlap of electron and hole wave functions. Besides, the strain-induced piezoelectric polarization of the InGaN layer on silicon substrate generates opposite sheet-bound charges at the interfaces, which causes a reduction in the depletion region of the InGaN/GaN QWs. The systematic analysis illustrates that the control of the piezoelectric polarization of the InGaN well layer can availably improve the internal quantum efficiency of InGaN-based LEDs.

chemistry, physical,physics, atomic, molecular & chemical
Effect of the AlN strain compensation layer on InGaN quantum well red-light-emitting diodes beyond epitaxy

Zhiyuan Liu,Mingtao Nong,Yi Lu,Haicheng Cao,Saravanan Yuvaraja,Na Xiao,Zahrah Alnakhli,Raul Ricardo Aguileta Vázquez,Xiaohang Li

DOI: https://doi.org/10.1364/OL.476727

2022-12-01

Abstract:An atomically thick AlN layer is typically used as the strain compensation layer (SCL) for InGaN-based-red light-emitting diodes (LEDs). However, its impacts beyond strain control have not been reported, despite its drastically different electronic properties. In this Letter, we describe the fabrication and characterization of InGaN-based red LEDs with a wavelength of 628 nm. A 1-nm AlN layer was inserted between the InGaN quantum well (QW) and the GaN quantum barrier (QB) as the SCL. The output power of the fabricated red LED is greater than 1 mW at 100 mA current, and its peak on-wafer wall plug efficiency (WPE) is approximately 0.3%. Based on the fabricated device, we then used numerical simulation to systematically study the effect of the AlN SCL on the LED emission wavelength and operating voltage. The results show that the AlN SCL enhances the quantum confinement and modulates the polarization charges, modifying the device band bending and the subband energy level in the InGaN QW. Thus, the insertion of the SCL considerably affects the emission wavelength, and the effect on the emission wavelength varies with the SCL thickness and the Ga content introduced into the SCL. In addition, the AlN SCL in this work reduces the LED operating voltage by modulating the polarization electric field and energy band, facilitating carrier transport. This implies that heterojunction polarization and band engineering is an approach that can be extended to optimize the LED operating voltage. We believe our study better identifies the role of the AlN SCL in InGaN-based red LEDs, promoting their development and commercialization.
InGaN-Based microLED Devices Approaching 1% EQE with Red 609 nm Electroluminescence on Semi-Relaxed Substrates

Ryan C. White,Hongjian Li,Michel Khoury,Cheyenne Lynsky,Michael Iza,Stacia Keller,David Sotta,Shuji Nakamura,Steven P. DenBaars

DOI: https://doi.org/10.3390/cryst11111364

IF: 2.7

2021-11-08

Crystals

Abstract:In this paper, we report the successful demonstration of bright InGaN-based microLED devices emitting in the red spectral regime grown by metal organic chemical vapor deposition (MOCVD) on c-plane semi-relaxed InGaN substrates on sapphire. Through application of an InGaN/GaN base layer scheme to ameliorate high defect density and maintain appropriate lattice constant throughout the growth, high-In quantum wells (QWs) can be grown with improved crystal quality. Improvement to the design of the growth scheme also yields higher power output resulting in an increase to the external quantum efficiency (EQE). Combined, these two improvements allow for an 80 × 80 μm2 microLED device emitting at 609 nm to achieve 0.83% EQE. Furthermore, the true In content of the QW is measured using atomic probe tomography (APT) to confirm the improved In incorporation during high temperature active region growth. These developments represent advancement toward the realization of bright, highly efficient red III-nitride LEDs to be used in RGB applications under one material system.

materials science, multidisciplinary,crystallography
Improvement of light extraction efficiency in AlGaInP-based vertical miniaturized-light-emitting diodes via surface texturing

Siyuan Cui,Lang Shi,Leonard Jin,Qianxi Zhou,Yuechang Sun,Conglong Jin,jiahui Hu,Kuosheng Wen,Zhou Xu,Shengjun Zhou,Jiahui Hu

DOI: https://doi.org/10.1364/ol.519723

IF: 3.6

2024-03-05

Optics Letters

Abstract:Siyuan Cui, Lang Shi, Leonard Jin, Qianxi Zhou, Yuechang Sun, Conglong Jin, Jiahui Hu, Kuosheng Wen, Zhou Xu, Shengjun Zhou AlGaInP-based light-emitting diodes (LEDs) suffer from a low external quantum efficiency (EQE), which is mainly restrained by the poor ... [Opt. Lett. 49, 1449-1452 (2024)]

optics
Performance Improvement of Gan-Based Near-Uv Leds with Ingan/Algan Superlattices Strain Relief Layer and Algan Barrier

Chuanyu Jia,Tongjun Yu,Xiaohui Feng,Kun Wang,Guoyi Zhang

DOI: https://doi.org/10.1016/j.spmi.2016.07.001

IF: 3.22

2016-01-01

Superlattices and Microstructures

Abstract:The carrier confinement effect and piezoelectric field-induced quantum-confined stark effect of different GaN-based near-UV LED samples from 395 nm to 410 nm emission peak wavelength were investigated theoretically and experimentally. It is found that near-UV LEDs with InGaN/AlGaN multiple quantum wells (MQWs) active region have higher output power than those with InGaN/GaN MQWs for better carrier confinement effect. However, as emission peak wavelength is longer than 406 nm, the output power of the near-UV LEDs with AlGaN barrier is lower than that of the LEDs with GaN barrier due to more serious spatial separation of electrons and holes induced by the increase of piezoelectric field. The N-doped InGaN/AlGaN superlattices (SLs) were adopted as a strain relief layer (SRL) between n-GaN and MQWs in order to suppress the polarization field. It is demonstrated the output power of near-UV LEDs is increased obviously by using SLs SRL and AlGaN barrier for the discussed emission wavelength range. Besides, the forward voltage of near-UV LEDs with InGaN/AlGaN SLs SRL is lower than that of near-UV LEDs without SRL. (C) 2016 Elsevier Ltd. All rights reserved.
High‐Efficiency InGaN Red Mini‐LEDs on Sapphire Toward Full‐Color Nitride Displays: Effect of Strain Modulation

Zhaoying Chen,Bowen Sheng,Fang Liu,Shangfeng Liu,Duo Li,Zexing Yuan,Tao Wang,Xin Rong,Jingsheng Huang,Jiangying Qiu,Wenji Liang,Chunlei Zhao,Long Yan,Jason Hu,Shiping Guo,Weikun Ge,Bo Shen,Xinqiang Wang

DOI: https://doi.org/10.1002/adfm.202300042

IF: 19

2023-04-02

Advanced Functional Materials

Abstract:A strain modulation strategy to expanse the surface lattice of the GaN epilayer and thus enhancing the indium incorporation in InGaN multiple quantum wells is proposed. High‐efficiency InGaN red mini‐light emitting diode (LED) chip with external quantum efficiency value up to 7.4% and full‐color nitride mini‐LED display are demonstrated. The results provide a convenient solution to accelerate the development of full‐color mini/micro‐LED displays. InGaN red light emitting diode (LED) is one of the crucial bottlenecks that must be broken through to realize high‐resolution full‐color mini/micro‐LED displays. The efficiency of InGaN LEDs drops rapidly as the emission spectra go from blue/green to red range due to the poor quality of high‐indium‐content InGaN materials. Here, high‐performance InGaN red LEDs on sapphire grown by metal–organic chemical vapor deposition through strain modulation are reported. A composite buffer layer is proposed to increase the surface lattice constant of GaN and hence successfully enhances the indium incorporation efficiency of the following InGaN active layers. Consequently, a high‐efficiency InGaN red mini‐LED chip (mesa area: 100 × 200 μm2) with a peak wavelength of 629 nm and an external quantum efficiency of 7.4% is realized. Finally, a full‐color nitride mini‐LED display panel with 74.1% coverage of Rec.2020 color gamut by using the InGaN red mini‐LED chips is fabricated. The study signifies the great potentials of full‐nitrides high‐resolution full‐color mini/micro‐LED displays.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
High-efficiency InGaN red light-emitting diodes with external quantum efficiency of 10.5% using extended quantum well structure with AlGaN interlayers

Dong-gun Lee,Youngjin Choi,Soojin Jung,Yongmin Kim,SooYoung Park,PunJae Choi,Sukho Yoon

DOI: https://doi.org/10.1063/5.0187902

IF: 4

2024-03-18

Applied Physics Letters

Abstract:In this study, we have demonstrated a high-efficiency InGaN red (625 nm) light-emitting diode (LED) with an external quantum efficiency (EQE) of 10.5% at a current density of 10 A/cm2. To achieve this, we introduced GaN cap layers on InGaN quantum wells and AlGaN interlayers. The introduction of these layers resulted in a red shift of the wavelength. The AlGaN interlayer caused band bending, while the GaN cap layer modulated the electron wavefunction, thus helping to achieve the wavelength red shift of the InGaN red LED with high EQE. This technology is crucial for the realization of discrete or monolithic full-color micro-LED displays.

physics, applied
Optimizing InGaN Micro-LED Efficiency: Investigating the Internal Quantum Efficiency and Ideality Factor Connection

Mengyuan Zhanghu,Yibo Liu,Byung-Ryool Hyun,Yanfei Li,Zhaojun Liu

DOI: https://doi.org/10.1109/ted.2024.3449829

IF: 3.1

2024-09-28

IEEE Transactions on Electron Devices

Abstract:We present a significant enhancement of internal quantum efficiency (IQE) exceeding 90% in InGaN-based Micro-light-emitting diodes (Micro-LEDs) achieved through sidewall passivation using atomic layer deposition (ALD). An intriguing observation is an inverse correlation between the diode ideality factor and IQE; devices boasting over 90% IQE consistently exhibit a diode ideality factor below 1.5. Specifically, for 10- m-sized devices, an IQE of 95.6% paired with a remarkably low ideality factor of 1.27 is realized, representing the pinnacle of achievable IQE at room temperature. In addition, enhanced light extraction efficiency (LEE) is observed through a low-refractive-index dielectric layer for passivation, facilitating a large critical angle at the interfaces. However, despite these advancements, the LEE for passivated devices remains at approximately 26%, resulting in an external quantum efficiency (EQE) of 25%. Consequently, our findings strongly advocate further device performance improvements in Micro-LEDs by enhancing LEE, necessitating novel device structures. In addition, we report the groundbreaking verification of the unity ideality factor for radiative recombination current in InGaN-based Micro-LEDs. This achievement is realized through the isolation of the radiative current component from the total current, thus substantiating the legitimacy of employing the Shockley-Read–Hall (SRH) to analyze the electrical characteristics of InGaN Micro-LEDs.

engineering, electrical & electronic,physics, applied
Strain‐Modulated Light Emission Properties in a Single InGaN/GaN Multiple‐Quantum‐Well Microwire‐Based Flexible Light‐Emitting Diode

Xingjun Luo,Weidong Song,Fangliang Gao,Jiang Shi,Chuan Cheng,Jiaqi Guo,Longfei He,Qing Liu,Yuqing Yang,Shuti Li,Qibao Wu

DOI: https://doi.org/10.1002/adem.202001430

IF: 3.6

2021-04-08

Advanced Engineering Materials

Abstract:<section class="article-section__content">Micro/nanowire light‐emitting diodes (LEDs) have inspired considerable research interests due to their potential applications in microdisplays and micro/nano‐optoelectronic integrated systems. Herein, a single InGaN/GaN multiple‐quantum‐well (MQW) microwire‐based flexible LED with high‐efficiency current injection and spreading is fabricated, and the performance modulation of the device by external strain is further studied. The results show that under external compressive strains, the output power is enhanced and the peak wavelength is blue shifted; on the contrary, the output power declines and the peak wavelength is red shifted under stretch strains. Compared with strain‐free devices, the flexible LED achieves the best performance at a − 1% compressive strain, with external quantum efficiency (EQE) increasing by 14.2% and efficiency droop reducing by 17.9%. The effective improvements are attributed to external strain‐induced piezoelectric polarization charges presented at local junctions/interfaces tuning the energy band. Herein, an efficient external modulation of light emission properties in a single InGaN/GaN MQW microwire LED is presented.</section>

materials science, multidisciplinary
Effect of V-Shaped pits on optical properties of GaN-Based green light-emitting diodes

Qingming Liu,Dan Han,Lin Shang,Xiaodong Hao,Yanyan Hou,Shuai Zhang,Ben Cao,Bin Han,Hengsheng Shan,Yingjun Yang,Shufang Ma,Bingshe Xu

DOI: https://doi.org/10.1016/j.optmat.2020.110129

IF: 3.754

2020-09-01

Optical Materials

Abstract:The optical properties of GaN-based green light-emitting diodes (LED) are investigated by transmission electron microscopy (TEM) and temperature-dependent micro-photoluminescence (μ-TDPL) in this study. Compared with the emission of normal c-plane multiple quantum wells (C-MQWs), the emission of C-MQWs close to V-shaped pits (V-pits) exhibits a shoulder peak phenomenon at cryogenic temperature, and the shoulder peak gradually disappears as the temperature increases. At room temperature, the peak of C-MQWs close to V-pits (C2) exhibits a red-shift. The formation of V-pits would induce strain relaxation. Strain relaxation can result in Indium (In) incorporation and localization, and reduced quantum-confined stark effects (QCSE). In incorporation and localization can lead to the red-shift of C2, reduced QCSE can cause the blue-shift of C2. Therefore, the red-shift of C2 arises from further In incorporation and localization of C-MQWs. It is worth noting that In incorporation and localization is dominant in the formation of V-pits for green InGaN/GaN C-MQWs. Additionally, the carriers limited in sidewall MQWs (S-MQWs) of V-pits escape into C-MQWs close to V-pits can mitigate the common phenomenon in which the emission intensity of C-MQWs decreases as the temperature increases, which helps improve the emission intensity of GaN-based green LEDs.

materials science, multidisciplinary,optics

Internal quantum efficiency improvement of InGaN-based red LED by using double V-pits layers as strain relief layer

Performance Improvement of InGaN Red Light‐Emitting Diode by Using V‐Pits Layer and Step‐Graded GaN Barrier

Analysis of the Mechanisms by Which Sputtered AlN Nucleation Layers Enhance the Performance of Red InGaN-based LEDs

Structural and optical analyses for InGaN-based red micro-LED

633-Nm InGaN-based Red LEDs Grown on Thick Underlying GaN Layers with Reduced In-Plane Residual Stress

Efficient InGaN-based Red Light-Emitting Diodes by Modulating Trench Defects

The efficiency enhancement of InGaN-based red LEDs with thick GaN underlying layers

Performance Improvement of GaN-based LEDs with Step Stage InGaN/GaN Strain Relief Layers in GaN-based Blue LEDs.

Demonstration of 651?nm InGaN-based red light-emitting diode with an external quantum efficiency over 6% by InGaN/AlN strain release interlayer

Metal Organic Vapor Phase Epitaxy of High-Indium-composition InGaN Quantum Dots Towards Red Micro-Leds

Green and Red Light-Emitting Diodes Based on Multilayer InGaN/GaN Dots Grown by Growth Interruption Method

Efficiency enhancement mechanism of piezoelectric effect in long-wavelength InGaN-based LED

Effect of the AlN strain compensation layer on InGaN quantum well red-light-emitting diodes beyond epitaxy

InGaN-Based microLED Devices Approaching 1% EQE with Red 609 nm Electroluminescence on Semi-Relaxed Substrates

Improvement of light extraction efficiency in AlGaInP-based vertical miniaturized-light-emitting diodes via surface texturing

Performance Improvement of Gan-Based Near-Uv Leds with Ingan/Algan Superlattices Strain Relief Layer and Algan Barrier

High‐Efficiency InGaN Red Mini‐LEDs on Sapphire Toward Full‐Color Nitride Displays: Effect of Strain Modulation

High-efficiency InGaN red light-emitting diodes with external quantum efficiency of 10.5% using extended quantum well structure with AlGaN interlayers

Optimizing InGaN Micro-LED Efficiency: Investigating the Internal Quantum Efficiency and Ideality Factor Connection

Strain‐Modulated Light Emission Properties in a Single InGaN/GaN Multiple‐Quantum‐Well Microwire‐Based Flexible Light‐Emitting Diode

Effect of V-Shaped pits on optical properties of GaN-Based green light-emitting diodes