Abstract:To address the increasing demand for multicolor light-emitting diodes (LEDs), a monolithic multicolor LED with a simple process and high reliability is desirable. In this study, organic-inorganic hybrid LEDs with violet and green wavelengths were fabricated by depositing CsPbBr3 perovskite green quantum dots (QDs) as the light-converting material on InGaN-based violet LEDs. As the injection current was increased, the total electroluminescence (EL) intensities of the hybrid LEDs increased, whereas the light-converted green emission efficiency of the CsPbBr3 QDs decreased. The maximum green-to-violet EL spectral intensity ratio of the hybrid LEDs with CsPbBr3 QDs was achieved with the injection current of <10 mA. Moreover, the EL spectral ratio of the green-to-violet emission decreased at an injection current of 100 mA. The light-conversion intensity of the CsPbBr3 QDs decreased linearly as the junction temperature of the hybrid LEDs was increased with increasing injection current, similar to the temperature-dependent photoluminescence degradation of CsPbBr3 QDs. In addition, the junction temperature of the hybrid LED was minimized by pulse injection to suppress the thermal degradation of QDs and increase the light conversion efficiency to green emission. Therefore, the overall emission spectrum color coordinates of the hybrid LEDs exhibited a red shift from violet to blue in the low-current region and a blue shift toward violet as the green emission of the QDs was decreased above 10 mA.

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Metal Organic Vapor Phase Epitaxy of High-Indium-composition InGaN Quantum Dots Towards Red Micro-Leds

InGaN Quantum Dot Green Light-Emitting Diodes with Negligible Blue Shift of Electroluminescence Peak Wavelength

White Light Emitting Diodes Based on Green Graphene Quantum Dots and Red Graphene Quantum Dots

Ingan/Gan Multilayer Quantum Dots Yellow-Green Light-Emitting Diode with Optimized Gan Barriers

Abnormal Stranski-Krastanov Mode Growth of Green InGaN Quantum Dots: Morphology, Optical Properties, and Applications in Light-Emitting Devices

Investigation on the Optical Properties of Micro-LEDs Based on InGaN Quantum Dots Grown by Molecular Beam Epitaxy

InGaN-Based microLED Devices Approaching 1% EQE with Red 609 nm Electroluminescence on Semi-Relaxed Substrates

Efficient InGaN-based Red Light-Emitting Diodes by Modulating Trench Defects

Monolithic Multicolor Emissions of InGaN-Based Hybrid Light-Emitting Diodes Using CsPbBr3 Green Quantum Dots

Growth and Characterization of Phosphor-Free White Light-Emitting Diodes Based on InGaN Blue Quantum Wells and Green–yellow Quantum Dots

InGaN/GaN Hybrid‐Nanostructure Light Emitting Diodes with Emission Wavelength Green and Beyond

Achieving InGaN-Based Red Light-Emitting Diodes by Increasing the Growth Pressure of Quantum Wells

Green InGaN Quantum Dots Breaking Through Efficiency and Bandwidth Bottlenecks of Micro‐LEDs

InGaN Quantum Dots for Micro-Leds

MOVPE-grown InGaN Quantum-Well Red Micro-Leds

Demonstration of 621-Nm-wavelength InGaN-based Single-Quantum-well LEDs with an External Quantum Efficiency of 4.3% at 10.1 A/cm2

Optical and Electronic Properties of InGaN/GaN Multi-Quantum-Wells Near-Ultraviolet Lighting-Emitting-Diodes Grown by Low-Pressure Metalorganic Vapour Phase Epitaxy

InGaN-based Red Light-Emitting Diodes: from Traditional to Micro-Leds

Study of the dominant luminescence mechanism in InGaN∕GaN multiple quantum wells comprised of ultrasmall InGaN quasiquantum dots

Fabrication of blue and green non-polar InGaN/GaN multiple quantum well light-emitting diodes on LiAlO2(100) substrates