Abstract:This work reports efficient full‐spectrum white light‐emitting diodes (WLEDs) excited by monolithically integrated III‐nitride structure, where trichromatic multiple quantum wells are constructed by bandgap engineering technique, allowing flexible manipulation of carrier transport. With commercial green‐red phosphor mixture, the fabricated WLEDs achieve broadband spectra with low‐ratio blue component, superior color rendering, and high luminous efficacy at different correlated color temperatures. Great progress made by heteroepitaxial growth technology encourages rapid development of III‐nitride heteroepitaxial structures and their applications in extensive fields. Particularly, innate bandgap tunability of III‐nitride materials renders them attractive for white light‐emitting diodes (WLEDs) that are considered as next‐generation solid‐state lighting sources. However, commercial phosphor‐converted WLEDs suffer from poor color rendering index (CRI) and intense blue component, hard to fulfill demanding requirements simultaneously for energy efficiency and healthy lighting. Here, an efficient full‐spectrum WLED excited by monolithically integrated III‐nitride quantum structure is reported, in which trichromatic InGaN/GaN multiple quantum wells are constructed by bandgap engineering heteroepitaxy growth allowing flexible regulation of indium composition and quantum barrier thickness to manipulate carrier transport behavior. Furthermore, relationship between structural parameters and emission characteristics as well as their impact on white light performance is systematically demonstrated. Combined with commonly used green‐red phosphor mixture, the fabricated full‐spectrum warm/cold WLEDs can emit broadband and continuous spectra with low‐ratio blue component, first exhibiting superior CRI (> 97/98), color fidelity (97/97), saturation (100/99), and luminous efficacy (>120/140 lm W−1). This work demonstrates the advantages of bandgap‐engineered quantum structure applied in excitation source, and opens up new avenues for the exploration of high‐quality solid‐state lighting.

InGaN/GaN Hybrid‐Nanostructure Light Emitting Diodes with Emission Wavelength Green and Beyond

Single nanowire green InGaN/GaN light emitting diodes.

Surface Plasmon Enhanced Graphene/P-Gan Heterostructure Light-Emitting Diode by Ag Nano-Particles

Multicolored-light Emission from InGaN/GaN Multiple Quantum Wells Grown by Selective-Area Epitaxy on Patterned Si(100) Substrates

Green Light Emitting Diodes on A-Plane GaN Bulk Substrates

Characterization of GaInN/GaN layers for green emitting laser diodes

Green and Red Light-Emitting Diodes Based on Multilayer InGaN/GaN Dots Grown by Growth Interruption Method

Graphene/p-AlGaN/p-GaN Electron Tunnelling Light Emitting Diodes with High External Quantum Efficiency

23.3: Invited Paper: Hybrid III‐Nitride/Nanocrystals White Light‐Emitting Diodes

InGaN/AlGaN DH Green LED\+*

InGaN Quantum Dot Green Light-Emitting Diodes with Negligible Blue Shift of Electroluminescence Peak Wavelength

Monolithically Integrating III‐Nitride Quantum Structure for Full‐Spectrum White LED via Bandgap Engineering Heteroepitaxial Growth

Understanding the p-Type GaN Nanocrystals on InGaN Nanowire Heterostructures

Wavelength-Tunable Green Light Sources Based on ZnO:Ga Nanowire/p-InGaN Heterojunctions

Growth and characterization of green GaInN-based light emitting diodes on free-standing non-polar GaN templates

Monolithic Multicolor Emissions of InGaN-Based Hybrid Light-Emitting Diodes Using CsPbBr3 Green Quantum Dots

Demonstration of 621-Nm-wavelength InGaN-based Single-Quantum-well LEDs with an External Quantum Efficiency of 4.3% at 10.1 A/cm2

From InGaN pyramids to micro-LEDs characterized by cathodoluminescence

Micrometer scale InGaN green light emitting diodes with ultra-stable operation

High efficiency InGaN nanowire tunnel junction green micro-LEDs

Multi-wavelength light emission from InGaN nanowires on pyramid-textured Si(100) substrate grown by stationary plasma-assisted molecular beam epitaxy