Abstract:Owing to its high luminous efficiency, chemical stabili ty and long lifetime, GaN based InGaN/GaN multiquantum wells (MQWs) LEDs is widely used in solidstate lighting and backlight of liquid crystal display. Recentl y, due to the rising demand of wearable and portable techno logy, the LEDs device size is required to be smaller. Compa red with traditional LEDs, the size of a single pixel of micr oLEDs can be decreased to tens of microns and each pixel ca n be controlled or driven independently, which have achiev ed much advantages in high resolution display and visiblelight communication (VLC). As to further improve the resol ution, the next trend is to shrink the size of LED pixe ls into several hundred nanometers, which is called na no-LEDs, or NLED for the next generation display. Here, we have investigated the fabrication of InGa N/GaN MQW nano-sized LEDs through bottom-up and top-down methods. Firstly, a series of highly ordered c-plane InGaN/GaN nanorod (NR) arrays were fabricate d by our developed soft UV-curing nanoimprint lithogr aphy on a wafer, as shown in Figure 1. Then, InGaN/ GaN nanorod LEDs were fabricated by an inductively coupled plasma(ICP) process. The radiative recombinati on in NLED samples is found to be greatly enhanced due to not only the suppressed non-radiative recombina tion but also the strain relaxation and optical waveguid e effects. Blue and green NLEDs have been finally rea lized, with good current–voltage performance and unifo rm luminescence. Secondly, InGaN/GaN multiple quant um well (MQW) nanowire ensembles grown on Si (11 1) substrates by plasma-assisted molecular beam epitax y (PA-MBE) are investigated. Well-oriented InGaN/GaN nanowires with perfect wurtzite crystal structure can b e achieved by optimizing the growth parameter of bott om GaN nanowires. As to realize electrical injected emission, InGaN/G aN single nanorod light-emitting diodes (NLEDs) have successfully been fabricated by nanoimprint lithography and focused ion beam-induced deposition. The current –voltage characteristics of single NLEDs show low lea kage current of 2 × 10 A at a reverse bias of −5 V and turn-ON voltage of ∼3.8 V. Linear polarization-or iented parallel to the c-axis with a degree of ∼50% w as discovered from the electroluminescence emission of single NLEDs[Figure 2]. Fig. 1. Schematic of our nanoimprint fabrication technology and SEM images of Nano-LEDs.

Micrometer scale InGaN green light emitting diodes with ultra-stable operation

High efficiency InGaN nanowire tunnel junction green micro-LEDs

Investigation on the Optical Properties of Micro-LEDs Based on InGaN Quantum Dots Grown by Molecular Beam Epitaxy

Green InGaN Quantum Dots Breaking Through Efficiency and Bandwidth Bottlenecks of Micro‐LEDs

Enhanced Device Performance of GaInN‐based Deep Green Light Emitting Diodes with V‐defect‐free Active Region

Highly efficient optical transition between excited states in wide InGaN quantum wells

InGaN Quantum Dot Green Light-Emitting Diodes with Negligible Blue Shift of Electroluminescence Peak Wavelength

Ultrasmall, Ultracompact and Ultrahigh Efficient InGaN Micro Light Emitting Diodes (μLEDs) with Narrow Spectral Line Width

Green InGaN/GaN based LEDs: high luminance and blue shift

Single nanowire green InGaN/GaN light emitting diodes.

Wavelength-Tunable Green Light Sources Based on ZnO:Ga Nanowire/p-InGaN Heterojunctions

Exploring an InGaN Micro-LED structure for optimum IQE operating on low current condition through simulation study

Green InGaN/GaN LEDs: High luminance and blue shift

46.4: Fabrication of InGaN/GaN‐based Nano‐leds for Display Applications

InGaN-Based microLED Devices Approaching 1% EQE with Red 609 nm Electroluminescence on Semi-Relaxed Substrates

Demonstration of 621-Nm-wavelength InGaN-based Single-Quantum-well LEDs with an External Quantum Efficiency of 4.3% at 10.1 A/cm2

Ultra-small InGaN Green Micro-Light-emitting Diodes Fabricated by Selective Passivation of P-Gan

Characterization of GaInN/GaN layers for green emitting laser diodes

Very Strong Nonlinear Optical Absorption in Green GaInN/GaN Multiple Quantum Well Structures

Improving Performances of Ultra-Small Size (1–20 Μ M) InGaN Red Micro-Leds by Growing on Freestanding GaN Substrates

Optical and Electronic Properties of InGaN/GaN Multi-Quantum-Wells Near-Ultraviolet Lighting-Emitting-Diodes Grown by Low-Pressure Metalorganic Vapour Phase Epitaxy