Abstract:GaN-based blue light-emitting diodes (LEDs) has been energy saving, commercial solid state lighting devices. But the research on GaN-based white-lighting LEDs has been expected to further study before commercialization. One kind of white LEDs consists of GaN-based LEDs and luminant phosphors, but conventional phosphors for GaN-based LEDs are undesirable, for example, phosphors matching GaN-based LEDs can hardly be found. Furthermore, losses caused by self-absorption or scattering of secondary photons in the phosphor medium itself contributes to a large part. In this study, CdTe nanocrystals as nanophosphor for GaN-based blue LEDs are discussed. CdTe NCs were prepared in aqueous solution employing thioglycolic acid (TGA) as stabilizer, the corresponding PL peak position of the NCs excited by 470 nm is 566 nm with full width at half maximum (FWHM) of 30 nm, indicating of monodisperse distribution. The large Stokes shift between its absorption and PL spectra would alleviate self-absorption loss. The InGaN/GaN multiple quantum wells (MQWs) epitaxial wafers were grown at (0001) plane sapphire substrate by the metalorganic chemical-vapor deposition systems (MOCVD), and flip-chip blue LEDs were fabricated with the standard procedure, blue light from MQWs was extracted from polished sapphire plane. A hybrid structure integrating flip-chip LEDs and nanocrystals was reported. CdTe NCs were deposited directly on transparent sapphire layer, which avoids the light emitted by CdTe NCs traped in high-index GaN cavity. And another advantage of the flip-chip structure for CdTe NCs reduces the losses from quenching of the luminescence, a behavior that has been well documented with NCs attaching to smooth metallic electrodes. Blue light part from InGaN LEDs in the hybrid structure provides blue element, and also acts as a pumping resource to excite CdTe nanocrystals to emit yellow light. From photoluminescence excitation (PLE) spectrum of CdTe NCs and electroluminescence (EL) of GaN-based LEDs, the absorption peak around 480 nm in the PLE spectrum match emission peak from InGaN blue LED, which indicates CdTe NCS can be efficiently excited by GaN blue light. The hybrid light of the structure was characterized by the room-temperature electroluminescence (EL) spectra, and CIE chromaticity coordinates corresponding to the EL spectra were obtained. With the hybrid structure, a hybrid white light has been achieved by combining blue component and photoluminescence of CdTe nanocrystals. Chromaticity coordinate of (x = 0.29, y = 0.30) was obtained at 10 mA driving current, and already lies in the white area. The experiment also conducted EL spectra with different forward driving current. It was demonstrated that the chromaticity coordinate of the hybrid device hardly varies with injection current, within 20 mA current level, the fluctuation of chromaticity coordinate lies about 5%. This is a favorable property of the hybrid LED as the color of the device is constant and independent of the injection current.

23.3: Invited Paper: Hybrid III‐Nitride/Nanocrystals White Light‐Emitting Diodes

White LED Based on YAG : Ce,Gd Phosphor and CdSe–ZnS Core/Shell Quantum Dots

Light‐Emitting Diodes: High Color Rendering Index Hybrid III‐Nitride/Nanocrystals White Light‐Emitting Diodes (Adv. Funct. Mater. 1/2016)

Electrically Injected Hybrid Organic/Inorganic III-Nitride White Light-Emitting Diodes Based on Rubrene/(InGaN/GaN) Multiple-Quantum-Wells P-N Junction

Improvement Of Color Conversion And Efficiency Droop In Hybrid Light-Emitting Diodes Utilizing An Efficient Non-Radiative Resonant Energy Transfer

White-lighting LEDs from InGaN Blue LEDs and CdTe Nanocrystals

Hybrid Cyan Nitride/Red Phosphors White Light-Emitting Diodes with Micro-Hole Structures

High Performance GaN-based Hybrid White Micro-Leds Integrated with Quantum-Dots

Monolithically Integrating III‐Nitride Quantum Structure for Full‐Spectrum White LED via Bandgap Engineering Heteroepitaxial Growth

Hybrid Iii-Nitride/Organic Semiconductor Nanostructure with High Efficiency Nonradiative Energy Transfer for White Light Emitters

High Color Rendering Index and Tunable Color Temperature of White Light Emitting Diodes with Yellow Emitting Graphene Quantum Dots Coated

High-color-rendering-index Phosphor-Free InGaN-based White Light-Emitting Diodes by Carrier Injection Enhancement Via V-pits

CsPb(Br/I) 3 Perovskite Nanocrystals for Hybrid GaN-Based High-Bandwidth White Light-Emitting Diodes

Monolithic Multicolor Emissions of InGaN-Based Hybrid Light-Emitting Diodes Using CsPbBr3 Green Quantum Dots

Color‐Tunable 3D InGaN/GaN Multi‐Quantum‐Well Light‐Emitting‐Diode Based on Microfacet Emission and Programmable Driving Power Supply

InGaN/GaN Hybrid‐Nanostructure Light Emitting Diodes with Emission Wavelength Green and Beyond

Nanoscale-cavity enhancement of color conversion with colloidal quantum dots embedded in the surface nano-holes of a blue-emitting light-emitting diode

Uniform nucleation and growth of Cs3Cu2I5 nanocrystals with high luminous efficiency and structural stability and their application in white light-emitting diodes

Enhanced Luminescence Through Interface Energy Transfer in Hierarchical Heterogeneous Nanocomposites and Application in White LEDs.

InGaN/GaN Multiple Quantum Wells on Selectively Grown GaN Microfacets and the Applications for Phosphor-Free White Light-Emitting Diodes

White light-emitting devices based on ZnCdS/ZnS and perovskite nanocrystal heterojunction