InGaN/AlGaN DH Green LED\+*

Lu Da,Liang Wang

2000-01-01

Chinese Journal of Semiconductors

Abstract:A Zn and Si co\|doped InGaN/AlGaN double\|heterostructure has been grown on Al\-2O\-3 substrate by LP\|MOVPE.Green LEDs with wavelength of 520~540nm have been fabricated.This is first report on green GaN based LED in China.

What problem does this paper attempt to address?

GaAlAs DH high-brightness red LED

Xiaoli L. Kang,Xihua Li,Minghua Wang,Dehua Chen,Nanxin Song

1998-01-01

Abstract:The technologies for raising the quantum efficiency of GaAlAs DH high-brightness red LED, and the preliminary results of the research are reported. The luminous intensity of LED having been developed is 400 mcd. Owing to the improvement of electrode fabrication, its forward voltage is lower than that of the foreign products.
Fabrication of blue and green non-polar InGaN/GaN multiple quantum well light-emitting diodes on LiAlO2(100) substrates

Bin Liu,Ping Han,Zili Xie,Rong Zhang,Chengxiang Liu,Xiangqian Xiu,Xuemei Hua,Hai Lu,Peng Chen,Youdou Zheng,Shengming Zhou

DOI: https://doi.org/10.1002/pssa.200983571

2010-01-01

Abstract:The non-polar In-plane InGaN/GaN light-emitting diodes (LEDs) grown by metal-organic chemical vapor deposition (MOCVD) on LiAlO2(100) substrates were investigated. The structure of LEDs is composed by GaN p-n junction and five InGaN/GaN multiple quantum wells (MQWs). They emit blue or green light, respectively, with different indium composition of InGaN as active layers in the MQWs. Third-order satellite peaks are observed in high resolution X-ray diffraction spectrum, indicating good quantum well interfaces. For 800 x 800 mu m(2) blue LED device, the output power achieves 3 mW under 200 mA injection current. The electroluminescence (EL) spectra of both non-polar blue and green InGaN/GaN LEDs show that the EL peak wavelength of LEDs almost saturates at certain position with increasing injection currents. This proves the absence of polarization fields in the active region present in c-plane structures. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Characterization of GaInN/GaN layers for green emitting laser diodes

C. Wetzel,Yufeng Li,J. Senawiratne,Mingwei Zhu,Yong Xia,S. Tomasulo,P.D. Persans,Lianghong Liu,D. Hanser,T. Detchprohm

DOI: https://doi.org/10.1016/j.jcrysgro.2009.01.067

IF: 1.8

2009-01-01

Journal of Crystal Growth

Abstract:An enhancement of radiative recombination in GaInN/GaN heterostructures is being pursued by a reduction of defects associated with threading dislocations and a structural control of piezoelectric polarization in the active light-emitting regions. First, in conventional heteroepitaxy on sapphire substrate along the polar c-axis of GaN, green and deep green emitting light-emitting diode (LED) wafers are being developed. By means of photoluminescence at variable low temperature and excitation density, internal quantum efficiencies of 0.18 for LEDs emitting at 530nm and 0.08 for those emitting at 555nm are determined. Those values hold for the high current density of 50A/cm2 of high-power LED lamps. In bare epi dies, we obtain efficacies of 16lm/W. At 780A/cm2 we obtain 22lm when measured through the substrate only. The 555nm LED epi material under pulsed photoexcitation shows stimulated emission up to a wavelength of 485nm. This strong blue shift of the emission wavelength can be avoided in homoepitaxial multiple quantum well (MQW) and LED structures grown along the non-polar a- and m-axes of low-dislocation-density bulk GaN. Here, wavelength-stable emission is obtained at 500 and 488nm, respectively, independent on excitation power density opening perspectives for visible laser diodes.
Nonpolar M-Plane Thin Film Gan and Ingan/Gan Light-Emitting Diodes on Lialo2(100) Substrates

B. Liu,R. Zhang,Z. L. Xie,C. X. Liu,J. Y. Kong,J. Yao,Q. J. Liu,Z. Zhang,D. Y. Fu,X. Q. Xiu,H. Lu,P. Chen,P. Han,S. L. Gu,Y. Shi,Y. D. Zheng,J. Zhou,S. M. Zhou

DOI: https://doi.org/10.1063/1.2825419

IF: 4

2007-01-01

Applied Physics Letters

Abstract:The nonpolar m-plane (11¯00) thin film GaN and InGaN∕GaN light-emitting diodes (LEDs) grown by metal-organic chemical vapor deposition on LiAlO2 (100) substrates are reported. The LEDs emit green light with output power of 80μW under a direct current of 20mA for a 400×400μm2 device. The current versus voltage (I-V) characteristic of the diode shows soft rectifying properties caused by defects and impurities in the p-n junction. The electroluminescence peak wavelength dependence on injection current, for currents in excess of 20mA, saturates at 515–516nm. This proves the absence of polarization fields in the active region present in c-plane structures. The light output intensity versus current (L-I) characteristic of the diode exhibits a superlinear relation at low injection current caused by nonradiative centers providing a shunt path and a linear light emission zone at high current level when these centers are saturated.
Wavelength-Tunable Green Light Sources Based on ZnO:Ga Nanowire/p-InGaN Heterojunctions

Maosheng Liu,Mingming Jiang,Yang Liu,Kai Tang,Da Ning Shi,Caixia Kan

DOI: https://doi.org/10.1021/acsanm.1c02650

IF: 6.14

2021-10-01

ACS Applied Nano Materials

Abstract:InGaN-based materials and structures have attracted extensive attention in developing green light-emitting diodes (LEDs), but the fabrication of high-performance low-dimensional green LEDs is seriously limited to the sample preparation, device construction, green gap, and efficiency droop. In this work, a kind of green LED composed of p-type InGaN layers and a one-dimensional wired ZnO via Ga incorporation, featuring a green wavelength of 520.0 nm and a linewidth of about 34.0 nm, was designed. The LED characteristics, with respect to the peak wavelengths and linewidths, are almost constant at different input currents, indicating the insensibility to the quantum-confined Stark effect commonly observed in InGaN-based light sources. The color coordinate is really close to pure green (0.170, 0.797) of the Rec. 2020 standard. Significantly, the efficiency droop in the fabricated LED is temperate, suggesting that the recombination of carriers can occur toward the n-ZnO:Ga/p-InGaN interface instead of the p-InGaN region. With an increase in Ga-doping concentration in ZnO:Ga wires, the main EL peaks show a significant red shift from 520 to 584 nm in the green and yellow emission spectrum. This wavelength-tuning is further confirmed by the successfully varied color coordinates. The fabrication of one-dimensional wired green LEDs not only can break through the green gap but also can work as a potential candidate to developing solid-state lighting in the visible band for a wide range of practical applications.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsanm.1c02650.Device preparation process of the n-ZnO:Ga MW/p-InGaN heterojunction green light sources; LED characterization of the as-constructed emission devices, with the wire having different sizes and surface morphologies; EL spectra of the as-constructed LEDs and their corresponding relative EQE in which the wires were selected from different samples (PDF)This article has not yet been cited by other publications.

materials science, multidisciplinary,nanoscience & nanotechnology
Growth and characterization of green GaInN-based light emitting diodes on free-standing non-polar GaN templates

T. Detchprohm,M. Zhu,Y. Li,Y. Xia,L. Liu,D. Hanser,C. Wetzel

DOI: https://doi.org/10.1016/j.jcrysgro.2009.01.060

IF: 1.8

2009-01-01

Journal of Crystal Growth

Abstract:We demonstrate homoepitaxial growth of GaInN/GaN-based green (500–560nm) light emitting diodes (LEDs) on a-plane and m-plane quasi-bulk GaN prepared by hydride vapor phase epitaxy (HVPE). We find that in order to achieve an emission peak wavelength beyond 500nm, a minimum InN-fraction of ∼14% is needed for both, a- and m-plane quantum wells (QWs), while ∼8% are enough for c-plane-oriented QWs. Besides increasing the InN-fraction in these non-polar QWs, widening the QW also proves to effectively shift the emission to longer wavelengths without loosing efficiency with the benefit of maintaining a low InN-fraction.
Green Light Emitting Diodes on A-Plane GaN Bulk Substrates

Theeradetch Detchprohm,Mingwei Zhu,Yufeng Li,Yong Xia,Christian Wetzel,Edward A. Preble,Lianghong Liu,Tanya Paskova,Drew Hanser

DOI: https://doi.org/10.1063/1.2945664

IF: 4

2008-01-01

Applied Physics Letters

Abstract:We report the development of 520–540nm green light emitting diodes (LEDs) grown along the nonpolar a axis of GaN. GaInN∕GaN-based quantum well structures were grown in homoepitaxy on both, a-plane bulk GaN and a-plane GaN on r-plane sapphire. LEDs on GaN show higher, virtually dislocation-free crystalline quality and three times higher light output power when compared to those on r-plane sapphire. Both structures show a much smaller wavelength blue shift for increasing current density (<10nm for 0.1to12.7A∕cm2) than conventional LEDs grown along the polar c axis.
Graphene/p-AlGaN/p-GaN Electron Tunnelling Light Emitting Diodes with High External Quantum Efficiency

Sirui Feng,Binzhong Dong,Yanghua Lu,Lingfeng Yin,Bailin Wei,Jiangbo Wang,Shisheng Lin

DOI: https://doi.org/10.1016/j.nanoen.2019.04.007

IF: 17.6

2019-01-01

Nano Energy

Abstract:The realization of p-type conduction in GaN and commercialized GaN light-emitting diodes (LED) is accepted as an advance in the development of human society. Conventionally, LED is based on PN junction and the quantum wells are introduced for confining electrons and holes, which improves the external quantum efficiency (EQE). Herein, we realized a graphene/AlGaN/GaN LED emitting double peaks at 430 nm and 560 nm. The blue peak at 430 nm is originated from the recombination process between holes injected from graphene/AlGaN heterostructure and electron produced from the tunnelling and avalanche multiplication process in p-type AlGaN/p-type GaN interface. Compared with the bare p-type AlGaN/GaN heterostructure without blue light emission, the graphene/p-AlGaN enhances the hole injection process through the band gap alignment and the mediate thickness of p-AlGaN is important taking the hole transport in AlGaN into consideration. The AlGaN/GaN interface confines the produced electrons and thus result in a high EQE of 55.8% under 5 mA current after intercalating an Al2O3 barrier at the interface between graphene and AlGaN/GaN. Moreover, the tunable graphene/AlGaN/GaN LED with different intensity of 430 nm has been demonstrated through changing the Fermi level of graphene by gating effect. The graphene/AlGaN heterostructure induced confinement effect can bring a novel type of LED, which can be optimized for special applications.
Enhanced Device Performance of GaInN‐based Deep Green Light Emitting Diodes with V‐defect‐free Active Region

T. Detchprohm,M. Zhu,W. Zhao,Y. Wang,Y. Li,Y. Xia,C. Wetzel

DOI: https://doi.org/10.1002/pssc.200880800

2009-01-01

Abstract:We have performed the epitaxial growth of GaInN based deep green (540-570 nm) light emitting diodes (LEDs) by introducing processes to avoid the formation of V-defects in the active region of the GaInN/GaN multiple quantum wells. For 541 and 559 nm LED wafers, the light output power (LOP) at 90 A/cm(2) reaches as high as 14 and 8 mW, respectively. These values are 4 times larger than those of typical deep green LED wafers with average V-defect density of 2-5 x 10(8) cm(-2). Under pulsed operation (pulse width of 50 mu s, duty cycle 1%), the external quantum efficiency exhibits a maximum of 39% at 16 A/cm(2) in 558 nm LED die of size (350 mu m)(2). This type of V-defect-free LED die also shows excellent lifetime behaviour. In 168 hr stress test of 30 mA at 80 degrees C, LOP declines less than 5%. Apparently, eliminating V-defects from the active region significantly enhances the reliability of deep green LEDs. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Demonstration of GaN/InGaN Light Emitting Diodes on （100） Β-Ga2o3 Substrates by Metalorganic Chemical Vapour Deposition

Xia Chang-Tai

DOI: https://doi.org/10.1088/0256-307x/25/6/071

2008-01-01

Chinese Physics Letters

Abstract:The growth and fabrication of GaN/InGaN multiple quantum well (MQW) light emitting diodes ( LEDs) on ( 100) beta-Ga2O3 single crystal substrates by metal-organic chemical vapour deposition (MOCVD) technique are reported. x-ray diffraction (XRD) theta-2 theta. scan spectroscopy is carried out on the GaN buffer layer grown on a ( 100) beta-Ga2O3 substrate. The spectrum presents several sharp peaks corresponding to the ( 100) beta-Ga2O3 and ( 004) GaN. High-quality ( 0002) GaN material is obtained. The emission characteristics of the GaN/InGaN MQW LED are measurement. The first green LED on beta-Ga2O3 with vertical current injection is demonstrated.
Green InGaN/GaN Multiple-Quantum-Wells with Pre-layer for High-efficiency mini-LEDs

Shouqiang Lai,Chaohsu Lai,Saijun Li,Guolong Chen,Xi Zheng,Tingwei Lu,Zongming Lin,Rongxing Wu,Yijun Lu,Hao-Chung Kuo,Zhong Chen,Tingzhu Wu

DOI: https://doi.org/10.1109/led.2023.3264983

IF: 4.8157

2023-01-01

IEEE Electron Device Letters

Abstract:In this study, we investigated the temperature-dependent photoluminescence characteristics of green InGaN/GaN multiple quantum wells (MQWs) with InGaN/GaN pre-wells and InGaN pre-layers, and the electroluminescence properties of the corresponding mini-LEDs were fabricated and studied. According to the fitting results of the temperature-dependent photoluminescence spectra obtained by the Vaishini and Arrhenius models, the S-shaped temperature-dependent peak energies of green InGaN/GaN MQWs grown on pre-wells and pre-layers indicated that these peaks originated from the localized state, and better crystal quality could be found in the MQWs with pre-layers. Moreover, we compared the electroluminescence properties of green mini-LEDs. These results demonstrate the advantages of growing green MQWs with an InGaN prelayer.

engineering, electrical & electronic
Enhanced Light Extraction from a GaN-based Green Light-Emitting Diode with Hemicylindrical Linear Grating Structure.

Yuanhao Jin,Fenglei Yang,Qunqing Li,Zhendong Zhu,Jun Zhu,Shoushan Fan

DOI: https://doi.org/10.1364/oe.20.015818

IF: 3.8

2012-01-01

Optics Express

Abstract:Significant enhancement in the light output from GaN-based green light-emitting diodes (LEDs) was achieved with a hemicylindrical grating structure on the top layer of the diodes. The grating structure was first optimized by the finite-difference time-domain (FDTD) method, which showed that the profile of the grating structure was critical for light extraction efficiency. It was found that the transmission efficiency of the 530 nm light emitted from the inside of the GaN LED increased for incidence angles between 23.58° and 60°. Such a structure was fabricated by electron-beam lithography and an etching method. The light output power from the LED was increased approximately 4.7 times compared with that from a conventional LED. The structure optimization is the key to the great increase in transmission efficiency. Furthermore, the light emitted from the edge of the LED units could be collected and extracted by the grating structures in adjacent LED units, thus enhancing the performance of the whole LED chip.
InGaN/GaN Hybrid‐Nanostructure Light Emitting Diodes with Emission Wavelength Green and Beyond

Soumyadip Chatterjee,Subhranshu Sekhar Sahu,Binit Mallick,Umang Singh,Swagata Bhunia,Ritam Sarkar,Dipankar Saha,Apurba Laha

DOI: https://doi.org/10.1002/pssr.202400147

2024-07-18

physica status solidi (RRL) - Rapid Research Letters

Abstract:Three sets of InGaN/GaN hybrid nanostructure light‐emitting diodes (LEDs) have been realized using the epitaxial lateral overgrowth technique, with emission in green, orange, and red wavelength regions. The electrical characteristics of the samples suggest a dominance of trap‐assisted tunneling mechanism in the forward‐bias regime. There is also a signature of inhomogeneity‐related defects in higher wavelength LEDs. Three sets of InGaN/GaN nanowire (NW) heterostructures are grown on Si(111) substrates under different growth conditions. A quasi‐two‐dimensional p‐GaN layer is grown on top of those structures using the epitaxial lateral overgrowth (ELOG) technique. Finally, the light‐emitting diodes (LED) are fabricated using these hybrid nanostructures following standard fabrication techniques. Electroluminescence (EL) measurement confirmed the emission wavelengths of 530.0 nm (green), 608.3 nm (orange), and 632.5 nm (red). The knee voltages of the devices are estimated to be in the range of 2.18–2.89 V, with higher knee voltages for samples emitting lower wavelengths. Further analysis of forward bias electrical characteristics suggests the dominance of tunneling current and an increase in the defect density in the heterostructures emitting higher wavelengths.

physics, condensed matter, applied,materials science, multidisciplinary
Green LED Development in Polar and Non-Polar Growth Orientation

Christian Wetzel,Mingwei Zhu,Yufeng Li,Wenting Hou,Liang Zhao,Wei Zhao,Shi You,Christoph Stark,Yong Xia,Michael DiBiccari,Theeradetch Detchprohm

DOI: https://doi.org/10.1117/12.829513

2009-01-01

Abstract:The green spectral region provides a formidable challenge for energy efficient light emitting diodes. In metal organic vapor phase epitaxy we developed GaInN/GaN quantum well material suitable for 500 - 580 nm LEDs by rigorous defect reduction and thrive for alloy uniformity. We achieve best results in homoepitaxy on polar c-plane, and non-polar a-plane and m-plane bulk GaN. By the choice of crystal orientation, the dipole of piezoelectric polarization in the quantum wells can be optimized for highest diode efficiency. We report progress towards the goal of reduced efficiency droop at longer wavelengths.
Single nanowire green InGaN/GaN light emitting diodes.

Guogang Zhang,Ziyuan Li,Xiaoming Yuan,Fan Wang,Lan Fu,Zhe Zhuang,Fang-Fang Ren,Bin Liu,Rong Zhang,Hark Hoe Tan,Chennupati Jagadish

DOI: https://doi.org/10.1088/0957-4484/27/43/435205

IF: 3.5

2016-01-01

Nanotechnology

Abstract:y Single nanowire (NW) green InGaN/GaN light-emitting diodes (LEDs) were fabricated by top-down etching technology. The electroluminescence (EL) peak wavelength remains approximately constant with an increasing injection current in contrast to a standard planar LED, which suggests that the quantum-confined Stark effect is significantly reduced in the single NW device. The strain relaxation mechanism is studied in the single NW LED using Raman scattering analysis. As compared to its planar counterpart, the EL peak of the NW LED shows a redshift, due to electric field redistribution as a result of changes in the cavity mode pattern after metallization. Our method has important implication for single NW optoelectronic device applications.
Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

Shuji Nakamura,Takashi Mukai,Masayuki Senoh

DOI: https://doi.org/10.1063/1.111832

IF: 4

1994-03-28

Applied Physics Letters

Abstract:Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure (DH) blue‐light‐emitting diodes (LEDs) with the luminous intensity over 1 cd were fabricated. As an active layer, a Zn‐doped InGaN layer was used for the DH LEDs. The typical output power was 1500 μW and the external quantum efficiency was as high as 2.7% at a forward current of 20 mA at room temperature. The peak wavelength and the full width at half‐maximum of the electroluminescence were 450 and 70 nm, respectively. This value of luminous intensity was the highest ever reported for blue LEDs.

physics, applied
Ingan/Gan Multilayer Quantum Dots Yellow-Green Light-Emitting Diode with Optimized Gan Barriers

Wenbin Lv,Lai Wang,Jiaxing Wang,Zhibiao Hao,Yi Luo

DOI: https://doi.org/10.1186/1556-276x-7-617

2012-01-01

Nanoscale Research Letters

Abstract:InGaN/GaN multilayer quantum dot (QD) structure is a potential type of active regions for yellow-green light-emitting diodes (LEDs). The surface morphologies and crystalline quality of GaN barriers are critical to the uniformity of InGaN QD layers. While GaN barriers were grown in multi-QD layers, we used improved growth parameters by increasing the growth temperature and switching the carrier gas from N-2 to H-2 in the metal organic vapor phase epitaxy. As a result, a 10-layer InGaN/GaN QD LED is demonstrated successfully. The transmission electron microscopy image shows the uniform multilayer InGaN QDs clearly. As the injection current increases from 5 to 50 mA, the electroluminescence peak wavelength shifts from 574 to 537 nm.
Study of Electrical and Optical Properties of InGaN/AlGaN Double Heterostructure Blue Light Emitting Diodes

Bo Shen,Hongtao Shi,Kai Yang,Z.Z. Chen,Yang Zhou,P. Chen,R. Zhang,Zheng Yang

DOI: https://doi.org/10.1109/icsict.1998.786062

2002-01-01

Abstract:The electrical and optical properties of double heterostructure blue light-emitting diodes, with an In/sub 0.06/Ga/sub 0.94/N:Zn,Si active layer, made by Nichia Ltd., were investigated at various temperatures. Measurement of the forward bias current-voltage behavior of the device demonstrates a departure from the Shockley model of p-n diodes, and it is observed that the dominant mechanism of carrier transport across the junction is associated with carrier tunneling. Electroluminescence experiments of the devices indicates that there is an emission peak located at 2.80 eV, and a relatively weaker short-wavelength peak at 3.2 eV. A significant blue shift of the optical emission peak, consistent with the tunneling character of electrical characteristics, was observed. Furthermore, we studied the properties of electroluminescence under various pulsed currents, and a degradation in I-V characteristics and a low resistance ohmic short were observed.
Ingan/Gan Blue Light Emitting Diodes Grown on Si(110) and Si(111) Substrates

Liu Zhan-Hui,Zhang Li-Li,Li Qing-Fang,Zhang Rong,Xiu Xiang-Qian,Xie Zi-Li,Shan Yun

DOI: https://doi.org/10.7498/aps.63.207304

IF: 0.906

2014-01-01

Acta Physica Sinica

Abstract:In this paper, InGaN/GaN multiple quantum-well blue light emitting diodes (LEDs) are successfully grown on Si(110) and Si(111) substrates. The micro-structural properties of the LEDs are characterized by means of high-resolution X-ray diffraction, atomic force microscopy, Raman spectra, and temperature dependent photoluminescence measurements. The results show that the sample on Si(110) substrate exhibits the high crystal quality, weak tensile strain, and large internal quantum efficiency. The optoelectronic properties of the LED devices are also investigated. The I-V curves indicate that the LED devices fabricated on Si(110) and Si(111) substrates have similar series resistances and low reverse leakage currents, but the LED devices fabricated on Si(110) substrate possess lower turn-on voltages. The relationship between light output intensity and injection current suggests that the LED device fabricated on Si(110) substrate has a strong light output efficiency. The study on the variation of spectral peak energy with injection current of the LED device reveals that LED device on Si(110) substrate presents a smaller spectral shift range when increasing the injection current. And the smaller spectral shift range reflects the weak quantum-confined Stark effect in the device, which can be attributed to the high crystal quality and weak strain between well layer and barrier film in the LED sample grown on Si(110).
Boosting the efficiency of InGaN-based green LEDs grown on Si through buffer strain engineering

Yayu Dai,Jianxun Liu,Xiujian Sun,Xiaoning Zhan,Yujiao Luo,Shuming Zhang,Qian Sun,Liangji Wang,Yun Ji,Masao Ikeda,Hui Yang

DOI: https://doi.org/10.1063/5.0218897

IF: 4

2024-07-08

Applied Physics Letters

Abstract:InGaN-based micro-light-emitting diodes (LEDs) grown on Si have gained tremendous interest for full-color displays. Strain management is a key challenge for the epitaxial growth of InGaN-based long-wavelength LEDs on Si because the accumulated compressive strain can severely limit In incorporation and degrade the quality of InGaN multi-quantum wells (MQWs) when the conventional Al-composition step-graded AlN/AlGaN buffer is used for strain control. In this work, we demonstrate a promising approach to effectively reduce the in-plane residual compressive stress of GaN by using an AlN single-layer buffer. The in-plane lattice parameter of the GaN underlayer was increased from 3.183 to 3.189 Å with the residual compressive stress at room temperature reduced from 0.37 to ∼0 GPa, which significantly improved the In incorporation of InGaN MQWs and extended the photoluminescence wavelength from 510 to 550 nm. A remarkably high internal quantum efficiency of 78% was thus achieved for the as-grown InGaN-based green LEDs on Si. This work paves the way for the growth of high-efficiency InGaN-based long-wavelength micro-LEDs.

physics, applied

InGaN/AlGaN DH Green LED\+*

GaAlAs DH high-brightness red LED

Fabrication of blue and green non-polar InGaN/GaN multiple quantum well light-emitting diodes on LiAlO2(100) substrates

Characterization of GaInN/GaN layers for green emitting laser diodes

Nonpolar M-Plane Thin Film Gan and Ingan/Gan Light-Emitting Diodes on Lialo2(100) Substrates

Wavelength-Tunable Green Light Sources Based on ZnO:Ga Nanowire/p-InGaN Heterojunctions

Growth and characterization of green GaInN-based light emitting diodes on free-standing non-polar GaN templates

Green Light Emitting Diodes on A-Plane GaN Bulk Substrates

Graphene/p-AlGaN/p-GaN Electron Tunnelling Light Emitting Diodes with High External Quantum Efficiency

Enhanced Device Performance of GaInN‐based Deep Green Light Emitting Diodes with V‐defect‐free Active Region

Demonstration of GaN/InGaN Light Emitting Diodes on （100） Β-Ga2o3 Substrates by Metalorganic Chemical Vapour Deposition

Green InGaN/GaN Multiple-Quantum-Wells with Pre-layer for High-efficiency mini-LEDs

Enhanced Light Extraction from a GaN-based Green Light-Emitting Diode with Hemicylindrical Linear Grating Structure.

InGaN/GaN Hybrid‐Nanostructure Light Emitting Diodes with Emission Wavelength Green and Beyond

Green LED Development in Polar and Non-Polar Growth Orientation

Single nanowire green InGaN/GaN light emitting diodes.

Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

Ingan/Gan Multilayer Quantum Dots Yellow-Green Light-Emitting Diode with Optimized Gan Barriers

Study of Electrical and Optical Properties of InGaN/AlGaN Double Heterostructure Blue Light Emitting Diodes

Ingan/Gan Blue Light Emitting Diodes Grown on Si(110) and Si(111) Substrates

Boosting the efficiency of InGaN-based green LEDs grown on Si through buffer strain engineering