Abstract:The realization of p-type conduction in GaN and commercialized GaN light-emitting diodes (LED) is accepted as an advance in the development of human society. Conventionally, LED is based on PN junction and the quantum wells are introduced for confining electrons and holes, which improves the external quantum efficiency (EQE). Herein, we realized a graphene/AlGaN/GaN LED emitting double peaks at 430 nm and 560 nm. The blue peak at 430 nm is originated from the recombination process between holes injected from graphene/AlGaN heterostructure and electron produced from the tunnelling and avalanche multiplication process in p-type AlGaN/p-type GaN interface. Compared with the bare p-type AlGaN/GaN heterostructure without blue light emission, the graphene/p-AlGaN enhances the hole injection process through the band gap alignment and the mediate thickness of p-AlGaN is important taking the hole transport in AlGaN into consideration. The AlGaN/GaN interface confines the produced electrons and thus result in a high EQE of 55.8% under 5 mA current after intercalating an Al2O3 barrier at the interface between graphene and AlGaN/GaN. Moreover, the tunable graphene/AlGaN/GaN LED with different intensity of 430 nm has been demonstrated through changing the Fermi level of graphene by gating effect. The graphene/AlGaN heterostructure induced confinement effect can bring a novel type of LED, which can be optimized for special applications.

Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

Ordered nanowire array blue/near-UV light emitting diodes.

GaAlAs DH high-brightness red LED

Improvement of Blue Llight-Ight-ight-eeemitting Mitting Ddiodes Iodes with an Undoped Graded Layer As the Electrons Tunneling Barrier Layer

InGaN/AlGaN DH Green LED\+*

Graphene/p-AlGaN/p-GaN Electron Tunnelling Light Emitting Diodes with High External Quantum Efficiency

Study of Electrical and Optical Properties of InGaN/AlGaN Double Heterostructure Blue Light Emitting Diodes

606-Nm InGaN Amber Micro-Light-Emitting Diodes with an On-Wafer External Quantum Efficiency of 0.56%

Demonstration of 621-Nm-wavelength InGaN-based Single-Quantum-well LEDs with an External Quantum Efficiency of 4.3% at 10.1 A/cm2

Fabrication of High-Brightness Blue Ingan/Gan Mqw Leds

High Power InGaN/GaN MQWs Blue LED with AlGaN/GaN Blocking Layers

Improved Performance of InGaN-based Red Light-Emitting Diodes by Micro-Hole Arrays

High-brightness InGaN-based Red Microleds Exceeding 1 Mw/mm2

630-Nm Red InGaN Micro-Light-emitting Diodes (<20 Μm × 20 Μm) Exceeding 1 Mw/mm2 for Full-Color Micro-Displays

The Blue Laser Diode: GaN based Light Emitters and Lasers

Ingan/Gan Blue Light Emitting Diodes Grown on Si(110) and Si(111) Substrates

Demonstration of 606Nm-Wavelength InGaN-based Amber Micro-Leds Toward Red Emission

High Efficiency of 5 Μm-Diameter Blue Micro-Light-Emitting Diodes

Emission Dynamics of GaN-based Blue Resonant-Cavity Light-Emitting Diodes

External quantum efficiency enhancement of GaN-based blue LEDs by treating their full-M-sided hexagonal mesa with TMAH solution

High-efficiency InGaN red light-emitting diodes with external quantum efficiency of 10.5% using extended quantum well structure with AlGaN interlayers