606-Nm InGaN Amber Micro-Light-Emitting Diodes with an On-Wafer External Quantum Efficiency of 0.56%

Zhe Zhuang,Daisuke Iida,Martin Velazquez-Rizo,Kazuhiro Ohkawa

DOI: https://doi.org/10.1109/led.2021.3080985

IF: 4.8157

2021-01-01

IEEE Electron Device Letters

Abstract:We demonstrated amber InGaN $47\times 47\,\,\mu \text{m}^{{2}}$ micro-light-emitting diodes ( $\mu $ LEDs) with the peak wavelength of 606 nm and full-width at maximum (FWHM) of 50 nm at 20 A/cm2. The amber $\mu $ LEDs exhibited a 33-nm blue-shift of the peak wavelength and obtain broader FWHMs to approximately 56 nm at 5 to 100 A/cm2. The peak on-wafer external quantum efficiency was 0.56% at 20 A/cm2. The characteristic temperature was 50–80 K at 20 to 60 A/cm2 but increased to 120–140 K at 80 to 100 A/cm2. The strong increase in the characteristic temperature from 60 to 80 A/cm2 could mainly be attributed to the saturation of the Shockley-Read-Hall non-radiative recombination at high current densities.