GaAlAs DH high-brightness red LED

Xiaoli L. Kang,Xihua Li,Minghua Wang,Dehua Chen,Nanxin Song

1998-01-01

Abstract:The technologies for raising the quantum efficiency of GaAlAs DH high-brightness red LED, and the preliminary results of the research are reported. The luminous intensity of LED having been developed is 400 mcd. Owing to the improvement of electrode fabrication, its forward voltage is lower than that of the foreign products.

What problem does this paper attempt to address?

An Efficient Green-Emitting Quantum Dot with Near-Unity Quantum Yield and Suppressed Auger Recombination for High-Performance Light-Emitting Diodes

Xiaokun Fan,Zhen Mu,Zhao Chen,Yunfeng Zhan,Fanyuan Meng,Yang Li,Guichuan Xing,Wai-Yeung Wong

DOI: https://doi.org/10.1016/j.cej.2023.142027

IF: 15.1

2023-01-01

Chemical Engineering Journal

Abstract:Near 100% photoluminescence quantum yield (PL QY) is the first target for designing luminescent quantum dots (QDs). Here, an alloyed QD with a core/shell structure of Cd0.194Zn0.806Se0.406S0.594/ZnS is synthesized and characterized by the feature of large core size (about 10 nm) and thin shell (around three ZnS monolayers). It exhibits an efficient green emission with the PL QY of 99.8% and ultra-fast radiative transition rate (kr) of 4.16 x 107 s-1. It demonstrates that the excited state will be rapidly decayed to its ground state through a radiative channel and less vulnerable to non-radiative processes. Under a high pump intensity (254.65 mu J cm - 2), the Cd0.194Zn0.806Se0.406S0.594/ZnS QD still owns a long biexciton decay lifetime (tau xx) of 1.05 ns and high biexciton QYxx of 25.1%, corresponding to a suppressed non-radiative Auger recombination. The Cd0.194Zn0.806Se0.406S0.594/ZnS QD based light-emitting diode exhibits a peak external quantum efficiency of 20.1% and brightness of over105 cd m-2 at 5.2 V. We believe that the Cd0.194Zn0.806Se0.406S0.594/ZnS QD not only provides a near-unity QY but also ensures its QD based light-emitting diode (QLED) with an excellent performance, which could be an excellent QD material for QLED applications.
High-efficiency InGaN red light-emitting diodes with external quantum efficiency of 10.5% using extended quantum well structure with AlGaN interlayers

Dong-gun Lee,Youngjin Choi,Soojin Jung,Yongmin Kim,SooYoung Park,PunJae Choi,Sukho Yoon

DOI: https://doi.org/10.1063/5.0187902

IF: 4

2024-03-18

Applied Physics Letters

Abstract:In this study, we have demonstrated a high-efficiency InGaN red (625 nm) light-emitting diode (LED) with an external quantum efficiency (EQE) of 10.5% at a current density of 10 A/cm2. To achieve this, we introduced GaN cap layers on InGaN quantum wells and AlGaN interlayers. The introduction of these layers resulted in a red shift of the wavelength. The AlGaN interlayer caused band bending, while the GaN cap layer modulated the electron wavefunction, thus helping to achieve the wavelength red shift of the InGaN red LED with high EQE. This technology is crucial for the realization of discrete or monolithic full-color micro-LED displays.

physics, applied
High-Performance Deep Red Colloidal Quantum Well Light-Emitting Diodes Enabled by the Understanding of Charge Dynamics

Sujuan Hu,Farzan Shabani,Baiquan Liu,Lingjiao Zhang,Min Guo,Guanhua Lu,Zhisheng Zhou,Jing Wang,Jacob C. Huang,Yonggang Min,Qifan Xue,Hilmi Volkan Demir,Chuan Liu

DOI: https://doi.org/10.1021/acsnano.2c02967

IF: 17.1

2022-07-12

ACS Nano

Abstract:Colloidal quantum wells (CQWs) have emerged as a promising family of two-dimensional (2D) optoelectronic materials with outstanding properties, including ultranarrow luminescence emission, nearly unity quantum yield, and large extinction coefficient. However, the performance of CQWs-based light-emitting diodes (CQW-LEDs) is far from satisfactory, particularly for deep red emissions (≥660 nm). Herein, high efficiency, ultra-low-efficiency roll-off, high luminance, and extremely saturated deep red...

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
InGaN/AlGaN DH Green LED\+*

Lu Da,Liang Wang

2000-01-01

Chinese Journal of Semiconductors

Abstract:A Zn and Si co\|doped InGaN/AlGaN double\|heterostructure has been grown on Al\-2O\-3 substrate by LP\|MOVPE.Green LEDs with wavelength of 520~540nm have been fabricated.This is first report on green GaN based LED in China.
Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

Shuji Nakamura,Takashi Mukai,Masayuki Senoh

DOI: https://doi.org/10.1063/1.111832

IF: 4

1994-03-28

Applied Physics Letters

Abstract:Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure (DH) blue‐light‐emitting diodes (LEDs) with the luminous intensity over 1 cd were fabricated. As an active layer, a Zn‐doped InGaN layer was used for the DH LEDs. The typical output power was 1500 μW and the external quantum efficiency was as high as 2.7% at a forward current of 20 mA at room temperature. The peak wavelength and the full width at half‐maximum of the electroluminescence were 450 and 70 nm, respectively. This value of luminous intensity was the highest ever reported for blue LEDs.

physics, applied
Performance Improvement of AlGaInP Based Red LEDs by Combination of Omnidirectional Mirror and AuZn Micro-contacts

Ming-Jie Zhao,Xin-Hao Xu,Mei-Jia Yang,Yu-Yun Lo,Sen-Lin Li,Jing-Feng Bi,Ming-Chun Tseng,Dong-Sing Wuu,Ray-Hua Horng,Hsiao-Wen Zan,Shui-Yang Lien,Wen-Zhang Zhu

DOI: https://doi.org/10.1016/j.rinp.2022.106159

IF: 4.565

2022-12-07

Results in Physics

Abstract:An omnidirectional reflector (ODR) consisted of (MgF 2 )/Ag was employed in AlGaInP-based vertical red light-emitting diodes (LEDs) in order to increase the light extraction hence the wall-plug efficiency. In this structure, the low-refractive-indexed dielectric MgF 2 layer with low refractive index acted as current blocking and reflection enhancing layer. The cylindrical AuZn alloy micro-contacts perforated through the MgF 2 layer and played roles in current spreading and injection. The area ratio of AuZn micro-contacts was optimized to improve the performance of the LED. The results indicated that increasing the area ratio of micro-contacts led to the improvement of current injection uniformity and reduction of forward voltage especially at higher injection current, but at the expense of light extraction by reducing reflection. After optimized, the best performance of red-light LEDs can be obtained with 3% area ratio of micro-contacts.

physics, multidisciplinary,materials science
Investigations on the high performance of InGaN red micro-LEDs with single quantum well for visible light communication applications

Fu-He Hsiao,Tzu-Yi Lee,Wen-Chien Miao,Yi-Hua Pai,Daisuke Iida,Chun-Liang Lin,Fang-Chung Chen,Chi-Wai Chow,Chien-Chung Lin,Ray-Hua Horng,Jr-Hau He,Kazuhiro Ohkawa,Yu-Heng Hong,Chiao-Yun Chang,Hao-Chung Kuo

DOI: https://doi.org/10.1186/s11671-023-03871-z

2023-07-27

Abstract:In this study, we have demonstrated the potential of InGaN-based red micro-LEDs with single quantum well (SQW) structure for visible light communication applications. Our findings indicate the SQW sample has a better crystal quality, with high-purity emission, a narrower full width at half maximum, and higher internal quantum efficiency, compared to InGaN red micro-LED with a double quantum wells (DQWs) structure. The InGaN red micro-LED with SQW structure exhibits a higher maximum external quantum efficiency of 5.95% and experiences less blueshift as the current density increases when compared to the DQWs device. Furthermore, the SQW device has a superior modulation bandwidth of 424 MHz with a data transmission rate of 800 Mbit/s at an injection current density of 2000 A/cm2. These results demonstrate that InGaN-based SQW red micro-LEDs hold great promise for realizing full-color micro-display and visible light communication applications.
Achieving InGaN-Based Red Light-Emitting Diodes by Increasing the Growth Pressure of Quantum Wells

Kun Xing,Zhihu Xia,Guangxia Xie,Zhengwei Pan,Zhe Zhuang,Junwei Hu,Yimeng Sang,Tao,Xiaoping Yang,Bin Liu,Rong Zhang

DOI: https://doi.org/10.1109/lpt.2023.3330496

IF: 2.6

2023-01-01

IEEE Photonics Technology Letters

Abstract:We extended the emission wavelength of indium gallium nitride (InGaN) quantum wells to the yellow–red region by utilizing increased growth pressure. A clear 54-nm redshift of the peak wavelength was observed that corresponded to the increase in quantum well growth pressure from 200 to 550 Torr. The 4-inch red epi-wafer presented uniform emission with a standard deviation of 3.3 nm. The packaged red LED exhibited the highest wall-plug efficiency of 4.92% and an external quantum efficiency of 5.11% at 0.5 A/cm2 with a peak wavelength at 619 nm. The minimum full width at half maximum of the red LED was around 50 nm, which contributed to the high color purity of the emission in the red region. These results suggest significant progress in developing high-efficiency InGaN red LEDs using the high-pressure epitaxial growth method.
InGaN-Based Orange-Red Resonant Cavity Light-Emitting Diodes

Wei Ou,Yang Mei,Daisuke Iida,Huan Xu,Minchao Xie,Yiwei Wang,Lei-Ying Ying,Bao-Ping Zhang,Kazuhiro Ohkawa

DOI: https://doi.org/10.1109/jlt.2022.3161637

IF: 4.7

2022-01-01

Journal of Lightwave Technology

Abstract:InGaN-based orange-red resonant cavity light-emitting diodes (RCLEDs), were fabricated by using an AlN current-confinement aperture and double dielectric distributed Bragg reflectors (DBRs). For realizing the structure of device, a substrate transfer technique was employed in process of fabrication. The device exhibited optical resonant effect, a high Q factor (3010), and a narrow emission linewidth (FMHW 0.2 nm), indicating low optical loss in the resonant cavity. Additionally, due to the three-dimensional (3D) optical confinement effect, the discrete modes of red emission were clearly observed in the far field via an angular resolved measurement system. And then, the energies of the photon states of a red RCLED consists generally with the simulation results based on a circular waveguide model. The saturated emission intensity of the orange-red RCLED was proportional to the area of current injection. This work demonstrated the feasibility of InGaN-based electrically injected orange-red RCLEDs that are useful for the development of displays and communication systems.

engineering, electrical & electronic,optics,telecommunications
Demonstration of 621-Nm-wavelength InGaN-based Single-Quantum-well LEDs with an External Quantum Efficiency of 4.3% at 10.1 A/cm2

Daisuke Iida,Pavel Kirilenko,Martin Velazquez-Rizo,Zhe Zhuang,Mohammed A. Najmi,Kazuhiro Ohkawa

DOI: https://doi.org/10.1063/5.0097761

IF: 1.697

2022-01-01

AIP Advances

Abstract:Here, we report highly efficient InGaN-based red light-emitting diodes (LEDs) grown on conventional c-plane-patterned sapphire substrates. An InGaN single quantum well active layer provides the red spectral emission. The 621-nm-wavelength LEDs exhibited high-purity emission with a narrow full-width at half-maximum of 51 nm. The packaged LED’s external quantum efficiency, light-output power, and forward voltage with a 621 nm peak emission wavelength at 20 mA (10.1 A/cm2) injection current were 4.3%, 1.7 mW, and 2.96 V, respectively. This design development represents a valuable contribution to the next generation of micro-LED displays.
Effect of Current on the Inhomogeneous Light Emission From AlGaInP-Based Flip-Chip Red Mini-LEDs

Chang-Dong Tong,Wei-Jie Guo,Chen-Ming Zhong,Zhi-Yun Wang,Yu-Lin Gao,Ya-Yong Chen,Wei-Ping Zhu,Li-Hong Zhu,Yi-Jun Lu,Zhen-Zhi Wu,Rong Zhang,Zhong Chen

DOI: https://doi.org/10.1109/led.2022.3146450

IF: 4.8157

2022-03-01

IEEE Electron Device Letters

Abstract:The distributions of the electroluminescence of AlGaInP-based flip-chip red light-emitting diodes with a size of $100\,\,\mu \text{m}\,\,\times 200\,\,\mu \text{m}$ have been obtained via microscopic hyperspectral imaging by capturing spatially resolved light emission from the side of a transparent substrate. As the injected DC current exceeds the current corresponding to the maximum external quantum efficiency, the light emission from the current crowding region decreases due to the self-heating effect, whereas the emission of the region corresponding to the anode becomes dominant due to the low heat resistance.

engineering, electrical & electronic
Metal Organic Vapor Phase Epitaxy of High-Indium-composition InGaN Quantum Dots Towards Red Micro-Leds

Luming Yu,Lei Wang,Peilong Yang,Zhibiao Hao,Jiadong Yu,Yi Luo,Changzheng Sun,Bing Xiong,Yanjun Han,Jian Wang,Hongtao LI,Lai Wang

DOI: https://doi.org/10.1364/ome.465134

2022-01-01

Optical Materials Express

Abstract:Micro-scale light-emitting diodes (micro-LEDs) are regarded as the next generation display technology. Compared to blue and green ones, InGaN-based red micro-LEDs require higher indium composition in their active region, which is quite challenging for material growth. Here, high-indium-composition InGaN quantum dots (QDs) with a density of 3 × 1010 cm-2 are self-assembly grown by metal-organic vapor phase epitaxy (MOVPE) based on a precursor-alternate-admittance method. The growth mechanism is systematically studied, and consequently a 613-nm red QDs sample with an internal quantum efficiency (IQE) of 12% is demonstrated. Furthermore, when micro-LEDs based on these red InGaN QDs with a chip size of 1-20 µm are fabricated, an electroluminescence blueshift to yellow and green is observed. The 20-µm and 1-µm micro-LEDs show 4.92% and 1.78% external quantum efficiency (EQE) at 0.3 and 20 A/cm2, respectively. By introducing multiple quantum wells (MQWs) pre-strained layer beneath the QD layers, a 10-µm micro-LED with 638 nm emission wavelength is demonstrated, with a price of reduced EQE to 0.03% at 10 A/cm2.
Light-Emitting AlGaAs/GaAs Diodes Based on InGaAs Strain-Compensated Quantum Wells with Minimized Internal Losses Caused by 940-nm Radiation Absorption

R. A. Salii,A. V. Malevskaya,D. A. Malevskii,S. A. Mintairov,A. M. Nadtochiy,N. A. Kalyuzhnyy

DOI: https://doi.org/10.1134/s1063774524601485

2024-09-28

Crystallography Reports

Abstract:IR light-emitting diodes (LEDs) based on InGaAs/AlGaAs multiple quantum wells (MQWs) and Al x Ga As y P layers, compensating stress in the active area, have been developed. The optical losses caused by absorption of the radiation generated by the active area (λ = 940 nm) have been investigated at different doping levels of n -GaAs substrates. It is shown that reduction of the donor doping level from 4 × 10 18 to 5 × 10 17 cm –3 gives an increase in the LED quantum efficiency of ~30%. A technology making it possible type to eliminate completely the optical losses caused by absorption during radiation output has been developed. Removal of the substrate and transfer of the device structure to a carrier substrate with formation of a rear metal reflector made it possible to create LEDs demonstrating a twofold increase in the external quantum efficiency (EQE) and efficiency (~40%) as compared to the technology of radiation output through an n -GaAs substrate.

crystallography
Highly efficient AlGaN-based deep-ultraviolet light-emitting diodes: from bandgap engineering to device craft

Xu Liu,Zhenxing Lv,Zhefu Liao,Yuechang Sun,Ziqi Zhang,Ke Sun,Qianxi Zhou,Bin Tang,Hansong Geng,Shengli Qi,Shengjun Zhou

DOI: https://doi.org/10.1038/s41378-024-00737-x

2024-08-13

Abstract:AlGaN-based light-emitting diodes (LEDs) operating in the deep-ultraviolet (DUV) spectral range (210-280 nm) have demonstrated potential applications in physical sterilization. However, the poor external quantum efficiency (EQE) hinders further advances in the emission performance of AlGaN-based DUV LEDs. Here, we demonstrate the performance of 270-nm AlGaN-based DUV LEDs beyond the state-of-the-art by exploiting the innovative combination of bandgap engineering and device craft. By adopting tailored multiple quantum wells (MQWs), a reflective Al reflector, a low-optical-loss tunneling junction (TJ) and a dielectric SiO2 insertion structure (IS-SiO2), outstanding light output powers (LOPs) of 140.1 mW are achieved in our DUV LEDs at 850 mA. The EQEs of our DUV LEDs are 4.5 times greater than those of their conventional counterparts. This comprehensive approach overcomes the major difficulties commonly faced in the pursuit of high-performance AlGaN-based DUV LEDs, such as strong quantum-confined Stark effect (QCSE), severe optical absorption in the p-electrode/ohmic contact layer and poor transverse magnetic (TM)-polarized light extraction. Furthermore, the on-wafer electroluminescence characterization validated the scalability of our DUV LEDs to larger production scales. Our work is promising for the development of highly efficient AlGaN-based DUV LEDs.
Highly Efficient Light‐Emitting Diodes based on Self‐Assembled Colloidal Quantum Wells

Yunke Zhu,Yunzhou Deng,Peng Bai,Xinan Wu,Yige Yao,Qinyun Liu,Jingjing Qiu,An Hu,Zhenyu Tang,Wenjin Yu,Pengzuo Jiang,Yaolong Li,Zhetong Liu,Peng Gao,Yanlei Hao,Wangxiao Jin,Desui Chen,Xitong Zhu,Yizheng Jin,Yunan Gao

DOI: https://doi.org/10.1002/adma.202305382

IF: 29.4

2023-09-07

Advanced Materials

Abstract:Nanocrystal‐based light‐emitting diodes (Nc‐LEDs) have immense potential for next‐generation high‐definition displays and lighting applications. They offer numerous advantages, such as low cost, high luminous efficiency, narrow emission, and long lifetime. However, the external quantum efficiency (EQE) of Nc‐LEDs, typically employing isotropic nanocrystals, has been limited by the out‐coupling factor. Here we demonstrate efficient, bright, and long lifetime red Nc‐LEDs based on anisotropic nanocrystals of colloidal quantum wells (CQWs). Through modification of the substrate's surface properties and control of the interactions among CQWs, we successfully spin‐coated a self‐assembled layer with an exceptionally high distribution of in‐plane transitions dipole moment (TDM) of 95%, resulting in an out‐coupling factor of 37%. Our devices exhibit a remarkable peak external quantum efficiency (EQE) of 26.9%, accompanied by a maximum brightness of 55,754 cd m−2 and a long operational lifetime (T95@100 cd m−2) over 15,000 h. These achievements represent a significant advancement compared to previous studies on Nc‐LEDs incorporating anisotropic nanocrystals. We expect our work to provide a general self‐assembly strategy for enhancing the light extraction efficiency of Nc‐LEDs based on anisotropic nanocrystals. This article is protected by copyright. All rights reserved

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Controlling the dopant profile for SRH suppression at low current densities in $λ\approx$ 1330nm GaInAsP light-emitting diodes

Parthiban Santhanam,Wei Li,Bo Zhao,Chris Rogers,Dodd Joseph Gray Jr.,Phillip Jahelka,Harry A. Atwater,Shanhui Fan

DOI: https://doi.org/10.1063/5.0002058

2020-01-30

Abstract:The quantum efficiency of double hetero-junction light-emitting diodes (LEDs) can be significantly enhanced at low current density by tailoring the spatial profile of dopants to suppress Shockley-Read-Hall (SRH) recombination. To demonstrate this effect we model, design, grow, fabricate, and test a GaInAsP LED ($\lambda \approx$ 1330nm) with an unconventional dopant profile. Compared against that of our control design, which is a conventional $n^+$-$n$-$p^+$ double hetero-junction LED, the dopant profile near the $n$-$p^+$ hetero-structure of the new design displaces the built-in electric field in such a way as to suppress the J02 space charge recombination current. The design principle generalizes to other material systems and could be applicable to efforts to observe and exploit electro-luminescent refrigeration at practical power densities.

Materials Science,Applied Physics,Optics
InGaN-Based microLED Devices Approaching 1% EQE with Red 609 nm Electroluminescence on Semi-Relaxed Substrates

Ryan C. White,Hongjian Li,Michel Khoury,Cheyenne Lynsky,Michael Iza,Stacia Keller,David Sotta,Shuji Nakamura,Steven P. DenBaars

DOI: https://doi.org/10.3390/cryst11111364

IF: 2.7

2021-11-08

Crystals

Abstract:In this paper, we report the successful demonstration of bright InGaN-based microLED devices emitting in the red spectral regime grown by metal organic chemical vapor deposition (MOCVD) on c-plane semi-relaxed InGaN substrates on sapphire. Through application of an InGaN/GaN base layer scheme to ameliorate high defect density and maintain appropriate lattice constant throughout the growth, high-In quantum wells (QWs) can be grown with improved crystal quality. Improvement to the design of the growth scheme also yields higher power output resulting in an increase to the external quantum efficiency (EQE). Combined, these two improvements allow for an 80 × 80 μm2 microLED device emitting at 609 nm to achieve 0.83% EQE. Furthermore, the true In content of the QW is measured using atomic probe tomography (APT) to confirm the improved In incorporation during high temperature active region growth. These developments represent advancement toward the realization of bright, highly efficient red III-nitride LEDs to be used in RGB applications under one material system.

materials science, multidisciplinary,crystallography
Efficient InGaN-based Red Light-Emitting Diodes by Modulating Trench Defects

Z. Pan,Z. Chen,H. Zhang,H. Yang,Y. Chen,J. Nie,C. Deng,B. Dong,D. Wang,Y. Li,H. Lin,W. Chen,F. Jiao,X. Kang,C. Jia,Z. Liang,Q. Wang,G. Zhang,B. Shen

2023-12-29

Abstract:Trench defects in multi-quantum wells (MQWs) have been considered as flawed structures that severely degrade the internal quantum efficiency of light-emitting diodes (LEDs) in the past. In this research, trench defects are innovatively modulated into the structure to enhance the efficiency of red InGaN LEDs. Specifically, dual-color MQWs structures are grown with green MQWs at the bottom and red MQWs at the top. When high-density trench defects are introduced into the green MQWs, the upper red MQWs exhibit a significant wavelength redshift of 68 nm and approximately 6-fold luminescence enhancement compared to those without trench defects. The wavelength redshift is attributed to the increased indium incorporation due to the strain relaxation effect of trench defects. Moreover, the luminescence enhancement originates from the strong emission of the red MQWs inside trench defects. The mechanisms behind the superior luminescent properties of red MQWs within trench defects are explored in detail. Red InGaN LEDs with an internal quantum efficiency of 16.4% are achieved by modulating the trench defects. The method of achieving InGaN-based red emission by introducing trench defects is simple and reproducible, requiring no additional substrate designs. This research provides a novel pathway toward achieving high-efficiency red InGaN LEDs.

Materials Science
Improvement of light extraction efficiency in AlGaInP-based vertical miniaturized-light-emitting diodes via surface texturing

Siyuan Cui,Lang Shi,Leonard Jin,Qianxi Zhou,Yuechang Sun,Conglong Jin,jiahui Hu,Kuosheng Wen,Zhou Xu,Shengjun Zhou,Jiahui Hu

DOI: https://doi.org/10.1364/ol.519723

IF: 3.6

2024-03-05

Optics Letters

Abstract:Siyuan Cui, Lang Shi, Leonard Jin, Qianxi Zhou, Yuechang Sun, Conglong Jin, Jiahui Hu, Kuosheng Wen, Zhou Xu, Shengjun Zhou AlGaInP-based light-emitting diodes (LEDs) suffer from a low external quantum efficiency (EQE), which is mainly restrained by the poor ... [Opt. Lett. 49, 1449-1452 (2024)]

optics
AlGaN multiple quantum well deep‐ultraviolet micro‐light‐emitting diodes for high color conversion efficiency quantum dots display

Feng Feng,Yibo Liu,Ke Zhang,Yonghong Lin,Ka‐Wah Chan,Hoi‐Sing Kwok,Zhaojun Liu

DOI: https://doi.org/10.1002/jsid.1107

2022-02-13

Journal of the Society for Information Display

Abstract:Displays based on inorganic micro‐light‐emitting diodes (micro‐LEDs) are highly anticipated for next‐generation technologies. AlGaN‐based deep‐ultraviolet (deep‐UV) micro‐LED as the excitation source for quantum dots display with high efficiency was reported in this paper. To achieve optimized electro‐optical performance, deep‐UV micro‐LEDs with different electrodes were fabricated and analyzed in sizes from 200 × 200 to 10 × 10 μm2. At the same forward bias, the devices with Ti/Al‐based electrodes achieved 10 times injection current and three times electroluminescence intensity than those with Cr/Al‐based electrodes. The blueshift phenomenon of deep‐UV light was observed from 292 nm at 2 A/cm2 to 287 nm at 200 A/cm2 with the increasing current density. By the excitation of deep‐UV micro‐LED, quantum dot film achieved high light conversion efficiency and optimized color rendering, as the converted color emission peak was separate from the pumping source. The high energy of deep‐UV photons and the narrow emission bandwidth of QDs resulted in prominent color purity. The forward voltage and electroluminescence intensity uniformity of a 250 × 250 micro‐LED array with each pixel size of 30 × 30 μm2 were further discussed. The optical microscope images of green QD film pumped by a deep‐UV micro‐LED demonstrated its competitive application in the color‐converted display. The QD‐converted light emission peak was separated from the deep‐UV excitation source, optimizing the color rendering. Prominent light conversion efficiency and color purity were achieved due to the high energy of deep‐UV photons and narrow emission bandwidth of QDs.

engineering, electrical & electronic,materials science, multidisciplinary,optics,physics, applied

GaAlAs DH high-brightness red LED

An Efficient Green-Emitting Quantum Dot with Near-Unity Quantum Yield and Suppressed Auger Recombination for High-Performance Light-Emitting Diodes

High-efficiency InGaN red light-emitting diodes with external quantum efficiency of 10.5% using extended quantum well structure with AlGaN interlayers

High-Performance Deep Red Colloidal Quantum Well Light-Emitting Diodes Enabled by the Understanding of Charge Dynamics

InGaN/AlGaN DH Green LED\+*

Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

Performance Improvement of AlGaInP Based Red LEDs by Combination of Omnidirectional Mirror and AuZn Micro-contacts

Investigations on the high performance of InGaN red micro-LEDs with single quantum well for visible light communication applications

Achieving InGaN-Based Red Light-Emitting Diodes by Increasing the Growth Pressure of Quantum Wells

InGaN-Based Orange-Red Resonant Cavity Light-Emitting Diodes

Demonstration of 621-Nm-wavelength InGaN-based Single-Quantum-well LEDs with an External Quantum Efficiency of 4.3% at 10.1 A/cm2

Effect of Current on the Inhomogeneous Light Emission From AlGaInP-Based Flip-Chip Red Mini-LEDs

Metal Organic Vapor Phase Epitaxy of High-Indium-composition InGaN Quantum Dots Towards Red Micro-Leds

Light-Emitting AlGaAs/GaAs Diodes Based on InGaAs Strain-Compensated Quantum Wells with Minimized Internal Losses Caused by 940-nm Radiation Absorption

Highly efficient AlGaN-based deep-ultraviolet light-emitting diodes: from bandgap engineering to device craft

Highly Efficient Light‐Emitting Diodes based on Self‐Assembled Colloidal Quantum Wells

Controlling the dopant profile for SRH suppression at low current densities in $λ\approx$ 1330nm GaInAsP light-emitting diodes

InGaN-Based microLED Devices Approaching 1% EQE with Red 609 nm Electroluminescence on Semi-Relaxed Substrates

Efficient InGaN-based Red Light-Emitting Diodes by Modulating Trench Defects

Improvement of light extraction efficiency in AlGaInP-based vertical miniaturized-light-emitting diodes via surface texturing

AlGaN multiple quantum well deep‐ultraviolet micro‐light‐emitting diodes for high color conversion efficiency quantum dots display