Abstract:III-V semiconductor light-emitting diodes (LEDs) are a promising candidate for demonstrating electroluminescent cooling. However, exceptionally high internal quantum efficiency designs are paramount to achieving this goal. A significant loss mechanism preventing unity internal quantum efficiency in GaAs-based devices is nonradiative surface recombination at the perimeter sidewall. To address this issue, an unconventional LED design is presented, in which the distance from the central current injection area to the device's perimeter is extended while maintaining a constant front contact grid size. This approach effectively moves the perimeter beyond the lateral spread of current at an operating current density of 101-102 A/cm2. In p-i-n GaAs/InGaP double heterojunction LEDs fabricated with varying sizes and perimeter extensions, a 19% relative increase in external quantum efficiency is achieved by extending the perimeter-to-contact distance from 25 to 250 μm for a front contact grid size of 450 × 450 μm2. Utilizing an in-house developed Photon Dynamics model, the corresponding relative increase in internal quantum efficiency is estimated to be 5%. These results are ascribed to a significant reduction in perimeter recombination due to a lower perimeter-to-surface area (P/A) ratio. However, in contrast to lowering the P/A ratio by increasing the front contact grid size of LEDs, the present method enables these improvements without affecting the required maximum current density in the microscopic active LED area under the front contact grid. These findings aid in the advancement of electroluminescent cooling in LEDs and could prove useful in other dedicated semiconductor devices where perimeter recombination is limiting.

Controlling the dopant profile for SRH suppression at low current densities in $λ\approx$ 1330nm GaInAsP light-emitting diodes

Pushing the limits of non-radiative recombination suppression in GaAs/GaInP light-emitting diodes by doping profile engineering

Controllable Design of Minority Carrier Diffusion in Npn Devices for Enhancing Er3+-Related Electroluminescence

Unusual Strategies For Using Indium Gallium Nitride Grown On Silicon (111) For Solid-State Lighting

Optimized GaAs∕AlGaAs Light-Emitting Diodes and High Efficiency Wafer-Fused Optical Up-Conversion Devices

Reduced Auger Coefficient through Efficient Carrier Capture and Improved Radiative Efficiency from the Broadband Optical Cavity: A Mechanism for Potential Droop Mitigation in InGaN/GaN LEDs

Sub-nanometer ultrathin epitaxy of AlGaN and its application in efficient doping

Designs of InGaN Micro-LED Structure for Improving Quantum Efficiency at Low Current Density

Lower current density driven InGaN/GaN micro-LED with improved quantum efficiency

Reduced Surface Recombination in Extended-Perimeter LEDs toward Electroluminescent Cooling

Stable electroluminescence in ambipolar dopant-free lateral p-n junctions

Effect of periodically varying chirped AlxInyGa(1-x-y)N/ Al0.70Ga0.30N Super-Lattice based electron blocking region for nearly droop free UV-C LEDs

Light-Emitting AlGaAs/GaAs Diodes Based on InGaAs Strain-Compensated Quantum Wells with Minimized Internal Losses Caused by 940-nm Radiation Absorption

P-Doping-Free Iii-Nitride High Electron Mobility Light-Emitting Diodes and Transistors

Significant Conductivity Enhancement in Al-rich N-Algan by Modulation Doping

Formation of a lateral p-n junction light-emitting diode on an n-type high-mobility GaAs/Al$_{0.33}$Ga$_{0.67}$As heterostructure

P -Doped 1.3μm InAs∕GaAs Quantum-Dot Laser with a Low Threshold Current Density and High Differential Efficiency

Performance Enhancement of Ingan-Based Light-Emitting Diodes with Ingan/Alinn/Ingan Composition-Graded Barriers

Non-heavy doped pnp-AlGaN tunnel junction for an efficient deep-ultraviolet light emitting diode with low conduction voltage

Compact ultrabroadband light-emitting diodes based on lanthanide-doped lead-free double perovskites

A Simulation Study on the Enhancement of the Efficiency of GaN-based Blue Light-Emitting Diodes at Low Current Density for Micro-Led Applications