Abstract:GaN-based micro-light-emitting diodes (micro-LEDs) are critical for lighting and display applications due to their high efficiency and stability. However, it has been a challenge to alleviate the reduction of the external quantum effect (EQE) of micro-LEDs with a decreasing size. This is attributed to an increase in the Shockley-Read-Hall (SRH) nonradiative recombination rate of the sidewall. Due to the size effects, it is more difficult to prepare efficient micro-LEDs with decreasing mesa size. In this work, micro-LED epi-wafers with InGaN quantum dots (QDs) as active layer materials were grown by plasma-assisted molecular beam epitaxy (PA-MBE), and full-M-sided hexagonal structure micro-LEDs were prepared. We fabricated the micro-LED array with the full-M-sided hexagonal structure and repaired etching damage on the sidewall by chemically treating with a tetramethylammonium hydroxide (TMAH) solution. Most of the surface defects caused by etching were eliminated, and the etching damage can be further reduced by using QDs as an active region. Thus, the efficiency of the micro-LED at a low injection current density is improved, and the size effect is eventually overcome. Compared with the 20 mu m micro-LED array, the peak EQE of the 10 mu m micro-LED array was improved by 79%, reaching 0.83% at 11 A/cm(2). We demonstrate that constructing full-M-sided structures can overcome the size effect in InGaN QD-based micro-LEDs. Notably, the cyan-green micro-LEDs fabricated by this method exhibited low efficiency drop. In addition, the QD-based micro-LED exhibits excellent wavelength stability with increasing injection current density. This work provides a new way to fabricate high-efficiency micro-LEDs.

Lower current density driven InGaN/GaN micro-LED with improved quantum efficiency

Designs of InGaN Micro-LED Structure for Improving Quantum Efficiency at Low Current Density

Efficiency and radiative recombination rate enhancement in GaN/AlGaN multi-quantum well-based electron blocking layer free UV-LED for improved luminescence

A Simulation Study on the Enhancement of the Efficiency of GaN-based Blue Light-Emitting Diodes at Low Current Density for Micro-Led Applications

Improved Performance of Electron Blocking Layer Free AlGaN Deep Ultraviolet Light-Emitting Diodes Using Graded Staircase Barriers

Exploring an InGaN Micro-LED structure for optimum IQE operating on low current condition through simulation study

Graphene/p-AlGaN/p-GaN Electron Tunnelling Light Emitting Diodes with High External Quantum Efficiency

Elimination of Size Effects in InGaN Quantum Dot Cyan-Green Micro-LEDs by Constructing a Full-m-Plane Hexagonal Structure

Reduced Auger Coefficient through Efficient Carrier Capture and Improved Radiative Efficiency from the Broadband Optical Cavity: A Mechanism for Potential Droop Mitigation in InGaN/GaN LEDs

Optimized InGaN/GaN Quantum Structure for High-Efficiency Micro-LEDs Displays With Low Current Injection

Improved electro-optical and photoelectric performance of GaN-based micro-LEDs with an atomic layer deposited AlN passivation layer.

Performance Improvement of InGaN LEDs by Using Strain Compensated Last Quantum Barrier and Electron Blocking Layer

Study of GaN-Based Light-Emitting Diode (LED) With a Hybrid Surface Structure

Optimizing InGaN Micro-LED Efficiency: Investigating the Internal Quantum Efficiency and Ideality Factor Connection

Enhancing the Performance of Blue GaN-based Light Emitting Diodes with Double Electron Blocking Layers

Greatly Enhanced Performance of AlGaN-based Deep Ultraviolet Light Emitting Diodes by Introducing a Polarization Modulated Electron Blocking Layer.

Enhancing GaN LED Efficiency with Advanced Quantum Well Structure

External Quantum Efficiency Enhancement of InGaN-Based Quantum Dot Green Micro-Light-Emitting Diode Arrays by Fabricating Full-A-Sided Triangular Mesa

Significant reduction in sidewall damage related external quantum efficiency (EQE) drop in red InGaN microLEDs (∼625 nm at 1 A cm−2) with device sizes down to 3 μm

Polarization Engineered p-Type Electron Blocking Layer Free AlGaN Based UV-LED Using Quantum Barriers with Heart-Shaped Graded Al Composition for Enhanced Luminescence

Improved Optical and Electrical Characteristics of GaN-Based Micro-LEDs by Optimized Sidewall Passivation