Abstract:The quest for higher modulation speed and lower energy consumption has inevitably promoted the rapid development of semiconductor-based solid lighting devices in recent years. GaN-based light-emitting diodes (LEDs) have emerged as promising candidates for achieving high efficiency and high intensity, and have received increasing attention among many researchers in this field. In this paper, we use a self-assembled array-patterned mask to fabricate InGaN/GaN multi-quantum well (MQW) LEDs with the intention of enhancing the light-emitting efficiency. By utilizing inductively coupled plasma etching with a self-assembled Ni cluster as the mask, nanopillar arrays are formed on the surface of the InGaN/GaN MQWs. We then observe the structure of the nanopillars and find that the V-defects on the surface of the conventional structure and the negative effects of threading dislocation are effectively reduced. Simultaneously, we make a comparison of the photoluminescence (PL) spectrum between the conventional structure and the nanopillar arrays, achieved under an experimental set-up with an excitation wavelength of 325 mm. The analysis demonstrates that MQW-LEDs with nanopillar arrays achieve a PL intensity 2.7 times that of conventional LEDs. In response to the PL spectrum, some reasons are proposed for the enhancement in the light-emitting efficiency as follows: 1) the improvement in crystal quality, namely the reduction in V-defects; 2) the roughened surface effect on the expansion of the critical angle and the attenuated total reflection; and 3) the enhancement of the light-extraction efficiency due to forward scattering by surface plasmon polariton modes in Ni particles deposited above the p-type GaN layer at the top of the nanopillars.

Enhancing GaN LED Efficiency with Advanced Quantum Well Structure

Realization of Highly Efficient InGaN Green LEDs with Sandwich-like Multiple Quantum Well Structure: Role of Enhanced Interwell Carrier Transport

Efficiency and radiative recombination rate enhancement in GaN/AlGaN multi-quantum well-based electron blocking layer free UV-LED for improved luminescence

The Enhancement of Light-Emitting Efficiency Using GaN-based Multiple Quantum Well Light-Emitting Diodes with Nanopillar Arrays

High-output power GaN-LED based on surface plasmon enhancement

Enhanced Light Extraction from a GaN-based Green Light-Emitting Diode with Hemicylindrical Linear Grating Structure.

Graphene/p-AlGaN/p-GaN Electron Tunnelling Light Emitting Diodes with High External Quantum Efficiency

Study of GaN-Based Light-Emitting Diode (LED) With a Hybrid Surface Structure

Surface-plasmon-enhanced GaN-LED based on the multilayered rectangular nano-grating

Significant Internal Quantum Efficiency Enhancement of GaN/AlGaN Multiple Quantum Wells Emitting at ~350 Nm Via Step Quantum Well Structure Design

Improving Modulation Bandwidth of C-Plane GaN-based Light-Emitting Diodes by an Ultra-Thin Quantum Wells Design.

Lower current density driven InGaN/GaN micro-LED with improved quantum efficiency

Highly efficient optical transition between excited states in wide InGaN quantum wells

Lateral‐Polarity Structure of AlGaN Quantum Wells: A Promising Approach to Enhancing the Ultraviolet Luminescence

Improvement in Quantum Efficiency of Green GaN-based Micro-Led by Trapezoidal Quantum Well

High-efficiency InGaN red light-emitting diodes with external quantum efficiency of 10.5% using extended quantum well structure with AlGaN interlayers

A Simulation Study on the Enhancement of the Efficiency of GaN-based Blue Light-Emitting Diodes at Low Current Density for Micro-Led Applications

High-efficiency Near-Uv Light-Emitting Diodes on Si Substrates with InGaN/GaN/AlGaN/GaN Multiple Quantum Wells

Cubic GaN and InGaN/GaN quantum wells

Performance Improvement of InGaN LEDs by Using Strain Compensated Last Quantum Barrier and Electron Blocking Layer

High Output Power GaN-Based Green Resonant-Cavity Light-Emitting Diodes With Trapezoidal Quantum Wells