Improving Modulation Bandwidth of C-Plane GaN-based Light-Emitting Diodes by an Ultra-Thin Quantum Wells Design.

Kamran Rajabi,Jiaxing Wang,Jie Jin,Yuchen Xing,Lai Wang,Yanjun Han,Changzheng Sun,Zhibiao Hao,Yi Luo,Keyuan Qian,Chien-Ju Chen,Meng-Chyi Wu
DOI: https://doi.org/10.1364/oe.26.024985
IF: 3.8
2018-01-01
Optics Express
Abstract:The GaN-based light emitting diodes (LEDs) have a great potential for visible light communication (VLC) due to their ubiquitous application in general lighting, but the modulation bandwidth of conventional c-plane LEDs is limited by carrier recombination rate in InGaN quantum wells (QWs) due to the polarization-field-induced quantum confined Stark effect (QCSE). Furthermore, the high modulation bandwidth on c-plane sapphire substrates can only be achieved at high current densities. Here, blue LEDs with ultra-thin InGaN QWs (1nm) and GaN barriers (3nm) are grown on c-plane sapphire substrate to suppress QCSE and extend the cut-off frequency from 214 MHz for conventional LEDs to 536 MHz at a current density of 2.5 kA/cm2, which is comparable to devices grown on semi-polar substrates.
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