High Modulation Bandwidth of Semipolar (11–22) InGaN/GaN LEDs with Long Wavelength Emission

Jack IH. Haggar,Yuefei Cai,Suneal S. Ghataora,Richard M. Smith,Jie Bai,Tao Wang
DOI: https://doi.org/10.1021/acsaelm.0c00399
IF: 4.494
2020-07-16
ACS Applied Electronic Materials
Abstract:Visible light communication requires III-nitride LEDs with a high modulation bandwidth but have c-plane limitations. General illumination requires green/yellow III-nitride LEDs with high optical efficiency that are difficult to achieve on c-plane substrates. Micro-LEDs with a low efficiency are used to obtain a high modulation bandwidth. This paper demonstrates a record modulation bandwidth of 540 MHz for our semipolar green LEDs with a broad area. Semipolar yellow and amber LEDs with modulation bandwidths of 350 and 140 MHz, respectively, have also been reported, and are the longest wavelength III-nitride LEDs. These results agree with differential carrier lifetime measurements.This article has not yet been cited by other publications.
materials science, multidisciplinary,engineering, electrical & electronic
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