Abstract:With ever-growing demand for 6G networks technology, visible light communication (VLC) as a vital component of 6G has challenging requirement for superior performance of light source. Herein, 20 $\mu$ m blue micro-LED fabricated on 2-inch c -plane GaN freestanding substrate with high bandwidth over 1 GHz was first demonstrated, and the systematic comparisons to sapphire-substrate micro-LED from the epitaxial materials characterization to optoelectronic properties as well as communication performance were further conducted. GaN-substrate LED wafer has high crystal quality with lower threading dislocation density (TDD), which is two orders of magnitude lower than that of sapphire-substrate LED wafer. The much lower TDD of GaN-substrate LED wafer and better heat dissipation of GaN substrate offer GaN-substrate micro-LED great advantages in optoelectronic properties as well as communication performance. GaN-substrate micro-LED exhibited higher light output power (LOP) especially at high operating current, which is improved by $\sim$ 21% at 96 mA compared to that of sapphire substrate. Also, GaN-substrate micro-LED achieved a relatively higher bandwidth of 1.282 GHz while maintaining higher LOP with lower operating voltage. And a higher data rate of 4.48 Gbps under 1 m free space link was obtained by GaN-substrate micro-LED, proving it being a promising candidate in high-speed VLC.

GaN-based Mid-Power Flip-Chip Light-Emitting Diode with High -3 Db Bandwidth for Visible Light Communications.

GaN-Based Freestanding Micro-LEDs with GHz Bandwidth and Low Efficiency Droop for Visible Light Communication

Improving the −3 Db Bandwidth of Medium Power GaN-based LEDs Through Periodic Micro Via-Holes for Visible Light Communications

High Bandwidth Semi-Polar InGaN/GaN Micro-LEDs With Low Current Injection for Visible Light Communication

High Bandwidth GaN-Based Micro-LEDs for Multi-Gb/s Visible Light Communications

Improving modulation bandwidth and optical power of GaN‐based blue LED by hollow‐runway active area

GaN-based Parallel Micro-Light-emitting Diode Arrays with Dual-Wavelength InxGa1-xN/GaN MQWs for Visible Light Communication

Improving Modulation Bandwidth of C-Plane GaN-based Light-Emitting Diodes by an Ultra-Thin Quantum Wells Design.

Embedded Electrode Micro-LEDs with High Modulation Bandwidth for Visible Light Communication

Large Modulation Bandwidth GaN-based Micro-Led Arrays on Si Substrates with Graded in Composition Barriers

High-Power GaN-Based Vertical Light-Emitting Diodes on 4-Inch Silicon Substrate

Parallel Micro-Led Arrays with a High Modulation Bandwidth for a Visible Light Communication

High-speed GaN-based Laser Diode with Modulation Bandwidth Exceeding 5 GHz for 20 Gbps Visible Light Communication

10.5 Gbps Visible Light Communication Systems Based on C-Plane Freestanding GaN Micro-Led

A Power-Type Single Gan-Based Blue Led with Improved Linearity for 3 Gb/S Free-Space Vlc Without Pre-Equalization

High-Speed Micro-LEDs Based on Nano-Engineered InGaN Active Region Towards Chip-to-Chip Interconnections

Modulation Characteristics of GaN-Based Light-Emitting-Diodes for Visible Light Communication

C-plane Blue Micro-LED with 1.53 GHz Bandwidth for High-speed Visible Light Communication

Comparison of Beyond 1 GHz C-Plane Freestanding and Sapphire-Substrate GaN-Based Micro-Leds for High-Speed Visible Light Communication

Improving the Modulation Bandwidth of GaN‐Based Light‐Emitting Diodes for High‐Speed Visible Light Communication: Countermeasures and Challenges

Low-Power High-Bandwidth Non-Polar InGaN Micro-LEDs at Low Current Densities for Energy-Efficient Visible Light Communication