Abstract:With ever-growing demand for 6G networks technology, visible light communication (VLC) as a vital component of 6G has challenging requirement for superior performance of light source. Herein, 20 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$\mu$</tex-math></inline-formula> m blue micro-LED fabricated on 2-inch <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c</i> -plane GaN freestanding substrate with high bandwidth over 1 GHz was first demonstrated, and the systematic comparisons to sapphire-substrate micro-LED from the epitaxial materials characterization to optoelectronic properties as well as communication performance were further conducted. GaN-substrate LED wafer has high crystal quality with lower threading dislocation density (TDD), which is two orders of magnitude lower than that of sapphire-substrate LED wafer. The much lower TDD of GaN-substrate LED wafer and better heat dissipation of GaN substrate offer GaN-substrate micro-LED great advantages in optoelectronic properties as well as communication performance. GaN-substrate micro-LED exhibited higher light output power (LOP) especially at high operating current, which is improved by <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$\sim$</tex-math></inline-formula> 21% at 96 mA compared to that of sapphire substrate. Also, GaN-substrate micro-LED achieved a relatively higher bandwidth of 1.282 GHz while maintaining higher LOP with lower operating voltage. And a higher data rate of 4.48 Gbps under 1 m free space link was obtained by GaN-substrate micro-LED, proving it being a promising candidate in high-speed VLC.

A Power-Type Single Gan-Based Blue Led with Improved Linearity for 3 Gb/S Free-Space Vlc Without Pre-Equalization

Improving modulation bandwidth and optical power of GaN‐based blue LED by hollow‐runway active area

10.5 Gbps Visible Light Communication Systems Based on C-Plane Freestanding GaN Micro-Led

High-Speed Micro-LEDs Based on Nano-Engineered InGaN Active Region Towards Chip-to-Chip Interconnections

High-bandwidth GaN Substrate Single-Pixel Blue Micro-LED Toward 10 Gbps Visible Light Communication

C-plane Blue Micro-LED with 1.53 GHz Bandwidth for High-speed Visible Light Communication

High Bandwidth GaN-Based Micro-LEDs for Multi-Gb/s Visible Light Communications

Comparison of Beyond 1 GHz <italic>C</italic>-Plane Freestanding and Sapphire-Substrate GaN-Based micro-LEDs for High-Speed Visible Light Communication

GaN-Based Freestanding Micro-LEDs with GHz Bandwidth and Low Efficiency Droop for Visible Light Communication

Gbps Long-Distance Real-Time Visible Light Communications Using a High-Bandwidth GaN-Based Micro-LED

Transmission data rate improvement by InGaN barriers in GaN-based blue micro-LEDs for visible light communication

Enhanced Light Extraction from a GaN-based Green Light-Emitting Diode with Hemicylindrical Linear Grating Structure.

31.38 Gb/s GaN-based LED Array Visible Light Communication System Enhanced with V-pit and Sidewall Quantum Well Structure

High-speed GaN-based Laser Diode with Modulation Bandwidth Exceeding 5 GHz for 20 Gbps Visible Light Communication

1.3 GHz E-O Bandwidth GaN-based Micro-Led for Multi-Gigabit Visible Light Communication

Improving Modulation Bandwidth of C-Plane GaN-based Light-Emitting Diodes by an Ultra-Thin Quantum Wells Design.

High Bandwidth Semi-Polar InGaN/GaN Micro-LEDs With Low Current Injection for Visible Light Communication

High-output power GaN-LED based on surface plasmon enhancement

Graphene/p-AlGaN/p-GaN Electron Tunnelling Light Emitting Diodes with High External Quantum Efficiency

Long-Wavelength Semipolar (11–22) InGaN/GaN LEDs with Multi-Gb/s Data Transmission Rates for VLC

High-Speed GaN-Based Superluminescent Diode for 4.57 Gbps Visible Light Communication