Modulation bandwidth improvement of GaN-based green micro-LEDs array by polarization-induced p-type doping

Zhen Huang,Renchun Tao,Duo Li,Zexing Yuan,Tai Li,Zhaoying Chen,Ye Yuan,Junjie Kang,Zhiwen Liang,Qi Wang,Pengfei Tian,Bo Shen,Xinqiang Wang

DOI: https://doi.org/10.1063/5.0098321

IF: 3.5

2022-07-18

Physics Today

Abstract:As one of the most promising candidates for signal carrier sources in visible light communication, GaN-based green micro-light emitting diodes ( μ -LEDs) exhibit a limited modulation bandwidth. In this work, we propose an approach to accelerate carrier recombination rate in green μ -LEDs and, thus, improve the modulation bandwidth by enhancing p-type conductivity to allow more efficient hole injection into an active region. The polarization-induced p-type doping with graded AlGaN enhances the p-type layer conductivity to 2.5 × 10 −2 S/m, which is about 4 times in magnitude higher than that of the conventional p-type GaN layer (0.6 × 10 −2 S/m). 16 × 16 green μ -LEDs arrays using such graded p-AlGaN exhibit a light output power of 4.4 mW and a modulation bandwidth of 130 MHz, both showing an improvement of about 45% as compared with the ones using a pure p-GaN layer. The polarization-induced p-type doping in graded AlGaN would accelerate the application of GaN-based μ -LEDs in visible light communication.

physics, multidisciplinary