Abstract:Long-wavelength light-emitting diode (LED) devices in the visible band (>492 nm) and their applications in highspeed visible light communication (VLC) have attracted tremendous research interest recently. The electrical-to-optical (E-O) bandwidth of conventional c-plane long-wavelength LEDs is limited by carrier lifetime in InGaN quantum well (QW), which is a fundamental problem limiting the data rate of high-speed VLC systems. In order to achieve an over GHz E-O bandwidth for applicable packaged LEDs, it is necessary to innovate from the material level in the active region. This work aims to break through the modulation bandwidth bottleneck of VLC systems based on green micro-LED. Commercial LEDs suffer a very limited E-O bandwidth due to their long radiative recombination carrier lifetime and large resistance-capacitance delay. Herein, by the utilization of green InGaN quantum dots (QDs) as the active region of microLED, this constraint can be remarkably alleviated. Green micro-LEDs containing five layers of InGaN QDs are fabricated, packaged, and then applied in a line-of-sight (LOS) VLC system over a 2 m free-space channel. The VLC system based on a single-pixel 50 and 75-mu m diameter green micro-LEDs can achieve high modulation bandwidths up to 1.22 and 1.14 GHz, respectively. Then, real-time non-return-to-zero on-off keying (NRZ-OOK) and offline pulse-amplitude modulation four-level (PAM-4) as two common schemes in short-distance optical communication are adopted to evaluate the VLC system performances. A real-time 2.1 Gbps NRZOOK and an offline 5 Gbps PAM-4 VLC links are achieved with BERs of 2.74 x 10(-3) and 1.88 x 10(-3) above the forward error correction (FEC) criterion of 3.8 x 10(-3), respectively. To the best of our knowledge, this is the highest-recorded modulation bandwidth and communication rate for a single-pixel green micro-LED-based VLC system.

Improving Modulation Bandwidth and Detection Performance of Green Micro-LEDs With Pre-Strained Structure at Positive Bias

Improving optoelectronic performance and modulation bandwidth of green μ-LEDs via a compound pre-strained strategy

Modulation bandwidth improvement of GaN-based green micro-LEDs array by polarization-induced p-type doping

High bandwidth series-biased green micro-LED array toward 6 Gbps visible light communication

Transceiver Performance Enhanced Green Micro-LED Based on Pre-Layer Structure Enable Multifunctional Applications in Underwater Visible Light Communication

High Bandwidth Semi-Polar InGaN/GaN Micro-LEDs With Low Current Injection for Visible Light Communication

White light-emitting quantum dot diodes and tuning of luminescence processes

Investigation of Modulation Bandwidth of InGaN Green Micro-LEDs by Varying Quantum Barrier Thickness

Improvements of the Modulation Bandwidth and Data Rate of Green-Emitting CsPbBr3 Perovskite Quantum Dots for Gbps Visible Light Communication

Multigigabit Visible Light Communication Based on High-Bandwidth InGaN Quantum Dot Green Micro-LED

Visible Light Communication System at 3.59 Gbit/s Based on C-Plane Green Micro-Led

Improvement in Modulation Bandwidth of Micro-LED Arrays Based on Low-Temperature-Interlayer Approach

Improved performance in green light-emitting diodes made with CdSe-conjugated polymer composite

Improving Modulation Bandwidth of C-Plane GaN-based Light-Emitting Diodes by an Ultra-Thin Quantum Wells Design.

Effect of white LED DC-bias on modulation speed for visible light communications

Boosting the efficiency of inverted quantum dot light-emitting diodes by balancing charge densities and suppressing exciton quenching through band alignment

Study On The Influence Of Led Pn Junction Area On Modulation Bandwidth In Visible Light Communication

Strain‐Modulated Light Emission Properties in a Single InGaN/GaN Multiple‐Quantum‐Well Microwire‐Based Flexible Light‐Emitting Diode

Green Micro-Led with a Bandwidth Exceeding 2 GHz for 9-Gbps Visible Light Communication Based on SNR Gap-Dependent Bit and Power Loading

Ultra-broadband Depolarization Based on Directly-Coupled Quantum Wire-to-well Modulation and Their Aliasing Effect for Polarization-Insensitive Light-Emitting Diodes.

Boosting Efficiency and Stability of Green InP Quantum Dot Light-Emitting Diodes by Interface Dipole Modulation