Abstract:Displays based on inorganic micro‐light‐emitting diodes (micro‐LEDs) are highly anticipated for next‐generation technologies. AlGaN‐based deep‐ultraviolet (deep‐UV) micro‐LED as the excitation source for quantum dots display with high efficiency was reported in this paper. To achieve optimized electro‐optical performance, deep‐UV micro‐LEDs with different electrodes were fabricated and analyzed in sizes from 200 × 200 to 10 × 10 μm2. At the same forward bias, the devices with Ti/Al‐based electrodes achieved 10 times injection current and three times electroluminescence intensity than those with Cr/Al‐based electrodes. The blueshift phenomenon of deep‐UV light was observed from 292 nm at 2 A/cm2 to 287 nm at 200 A/cm2 with the increasing current density. By the excitation of deep‐UV micro‐LED, quantum dot film achieved high light conversion efficiency and optimized color rendering, as the converted color emission peak was separate from the pumping source. The high energy of deep‐UV photons and the narrow emission bandwidth of QDs resulted in prominent color purity. The forward voltage and electroluminescence intensity uniformity of a 250 × 250 micro‐LED array with each pixel size of 30 × 30 μm2 were further discussed. The optical microscope images of green QD film pumped by a deep‐UV micro‐LED demonstrated its competitive application in the color‐converted display. The QD‐converted light emission peak was separated from the deep‐UV excitation source, optimizing the color rendering. Prominent light conversion efficiency and color purity were achieved due to the high energy of deep‐UV photons and narrow emission bandwidth of QDs.

AlGaN multiple quantum well deep‐ultraviolet micro‐light‐emitting diodes for high color conversion efficiency quantum dots display

AlGaN-Based Deep-UV Micro-LED Array for Quantum Dots Converted Display With Ultra-Wide Color Gamut

61‐3: Investigation of AlGaN‐Based Deep‐UV MicroLED as Highly Efficient Excitation Source for Green Perovskite Quantum‐Dot Display

53.3: Investigation of AlGaN‐based Deep‐UV Micro‐LED as Highly Efficient Excitation Source for Green Perovskite Quantum Dots Display

Optimized InGaN/GaN Quantum Structure for High-Efficiency Micro-LEDs Displays With Low Current Injection

High-Uniform and High-Efficient Color Conversion Nanoporous GaN-Based Micro-LED Display with Embedded Quantum Dots

High density GaN/AlN quantum dots for deep UV LED with high quantum efficiency and temperature stability

Quantum-dot-based full-color micro-LED displays

Investigation on the Optical Properties of Micro-LEDs Based on InGaN Quantum Dots Grown by Molecular Beam Epitaxy

Full-Color Micro-LED Devices Based on Quantum Dots

RGB Arrays for Micro-Light-Emitting Diode Applications Using Nanoporous GaN Embedded with Quantum Dots

Highly efficient AlGaN-based deep-ultraviolet light-emitting diodes: from bandgap engineering to device craft

The Size-Dependent Photonic Characteristics of Colloidal-Quantum-Dot-Enhanced Micro-LEDs

AlGaN-based Deep Ultraviolet Micro-Led Emitting at 275 Nm.

InGaN blue resonant cavity micro-LED with RGY quantum dot layer for broad gamut, efficient displays

Quantum Dot Color Conversion Efficiency Enhancement in Micro-Light-Emitting Diodes by Non-Radiative Energy Transfer

Wafer-Scale Monolithic Integration of Blue Micro-Light-Emitting Diodes and Green/Red Quantum Dots for Full-Color Displays

InGaN Quantum Dots for Micro-Leds

Resonant-enhanced full-color emission of quantum-dot-based micro LED display technology

Advances in Quantum-Dot-Based Displays

Metal Organic Vapor Phase Epitaxy of High-Indium-composition InGaN Quantum Dots Towards Red Micro-Leds