Abstract:An atomically thick AlN layer is typically used as the strain compensation layer (SCL) for InGaN-based-red light-emitting diodes (LEDs). However, its impacts beyond strain control have not been reported, despite its drastically different electronic properties. In this Letter, we describe the fabrication and characterization of InGaN-based red LEDs with a wavelength of 628 nm. A 1-nm AlN layer was inserted between the InGaN quantum well (QW) and the GaN quantum barrier (QB) as the SCL. The output power of the fabricated red LED is greater than 1 mW at 100 mA current, and its peak on-wafer wall plug efficiency (WPE) is approximately 0.3%. Based on the fabricated device, we then used numerical simulation to systematically study the effect of the AlN SCL on the LED emission wavelength and operating voltage. The results show that the AlN SCL enhances the quantum confinement and modulates the polarization charges, modifying the device band bending and the subband energy level in the InGaN QW. Thus, the insertion of the SCL considerably affects the emission wavelength, and the effect on the emission wavelength varies with the SCL thickness and the Ga content introduced into the SCL. In addition, the AlN SCL in this work reduces the LED operating voltage by modulating the polarization electric field and energy band, facilitating carrier transport. This implies that heterojunction polarization and band engineering is an approach that can be extended to optimize the LED operating voltage. We believe our study better identifies the role of the AlN SCL in InGaN-based red LEDs, promoting their development and commercialization.

Demonstration of 651?nm InGaN-based red light-emitting diode with an external quantum efficiency over 6% by InGaN/AlN strain release interlayer

Demonstration of 621-Nm-wavelength InGaN-based Single-Quantum-well LEDs with an External Quantum Efficiency of 4.3% at 10.1 A/cm2

High‐Efficiency InGaN Red Mini‐LEDs on Sapphire Toward Full‐Color Nitride Displays: Effect of Strain Modulation

InGaN-Based microLED Devices Approaching 1% EQE with Red 609 nm Electroluminescence on Semi-Relaxed Substrates

Achieving InGaN-Based Red Light-Emitting Diodes by Increasing the Growth Pressure of Quantum Wells

Wafer-scale emission uniformity of InGaN-based red light-emitting diodes on an in situ InGaN decomposition template

High-efficiency InGaN red light-emitting diodes with external quantum efficiency of 10.5% using extended quantum well structure with AlGaN interlayers

Efficient InGaN-based Red Light-Emitting Diodes by Modulating Trench Defects

Internal quantum efficiency improvement of InGaN-based red LED by using double V-pits layers as strain relief layer

A Simple Approach to Achieving Ultrasmall III-Nitride Microlight-Emitting Diodes with Red Emission

Demonstration of Low Forward Voltage InGaN-based Red LEDs

Analysis of the Mechanisms by Which Sputtered AlN Nucleation Layers Enhance the Performance of Red InGaN-based LEDs

True‐Red InGaN Light‐Emitting Diodes for Display Applications

Demonstration of Epitaxial Growth of Strain-Relaxed GaN Films on Graphene/sic Substrates for Long Wavelength Light-Emitting Diodes

Graphene/p-AlGaN/p-GaN Electron Tunnelling Light Emitting Diodes with High External Quantum Efficiency

Red InGaN nanowire LED with bulk active region directly grown on p-Si (111)

Effect of the AlN strain compensation layer on InGaN quantum well red-light-emitting diodes beyond epitaxy

Demonstration of 606Nm-Wavelength InGaN-based Amber Micro-Leds Toward Red Emission

630-Nm Red InGaN Micro-Light-emitting Diodes (<20 Μm × 20 Μm) Exceeding 1 Mw/mm2 for Full-Color Micro-Displays

Metal Organic Vapor Phase Epitaxy of High-Indium-composition InGaN Quantum Dots Towards Red Micro-Leds

633-Nm InGaN-based Red LEDs Grown on Thick Underlying GaN Layers with Reduced In-Plane Residual Stress