Abstract:Interband photoluminescence (PL) and absorption spectra of n-InN samples with Hall concentrations from 3.6 X 10(17) to 6 X 10(18) cm(-3) were studied. Sample thicknesses were in the range from 12 to 0.47 mu m. A set of lasers for the PL excitation in the energy range from 2.41 down to 0.81 eV was used. The well-resolved structure consisting of three peaks was observed in the PL spectra of the high-quality samples in the energy interval from 0.50 to 0.67 eV at liquid-helium and nitrogen temperatures. We attributed one of two low-energy features of the spectra to the recombination of degenerate electrons with the holes trapped by deep acceptors with a binding energy of E-da=0.050-0.055 eV, and the other one was attributed to the LO-phonon replica of this band. The higher-energy PL peak is considered as a complex band formed by two mechanisms. The first one is related to the transitions of electrons to the states of shallow acceptors with a binding energy of E-sh=0.005-0.010 eV and/or to the states of the Urbach tail populated by photoholes. The second mechanism contributing to this band is the band-to-band recombination of free holes and electrons. The relative intensities of the two higher-energy PL peaks were found to be strongly dependent on temperature and excitation power. A model approach taking into account the Urbach tails of conduction and valence bands and the acceptor states was developed. The calculations of PL and the absorption spectra have shown that the band gap of InN in the limit of zero temperature and zero electron concentration is close to 0.665-0.670 eV. The model calculations allowed us to explain the structures of all the spectra observed, their dependence on the excitation power, and the temperature variations of PL and the absorption spectra. The effective masses of electrons at the Gamma point equal to 0,042 and 0.07 of free-electron mass were tested in calculations. The conductivity band was assumed to be nonparabolic.

Direct observation of Levy flight of holes in bulk n-InP

Levy Flight of Holes in InP Semiconductor Scintillator

Luminescent Properties Of Nitrogen Doped Gap Semiconductor Studied With Photothermal Deflection Spectroscopy

Edge excitation geometry for studying intrinsic emission spectra of bulk n-InP

Photon assisted Levy flights of minority carriers in n-InP

Manifestation of the equilibrium hole distribution in photoluminescence of n-InN

Photoluminescence of N‐inn with Low Electron Concentrations

Acceptor States in the Photoluminescence Spectra of N-Inn

Radiation efficiency of heavily doped bulk n-InP semiconductor

Photoluminescence Spectroscopy Of Nearly Defect-Free Inn Microcrystals Exhibiting Nondegenerate Semiconductor Behaviors

Infrared ellipsometry and near-infrared-to-vacuum-ultraviolet ellipsometry study of free-charge carrier properties in In-polar p-type InN

Observation Of Nonequilibrium Longitudinal Optical Phonons In Inn And Its Implications

Dynamics of Strongly Degenerate Electron-Hole Plasmas and Excitons in Single Inp Nanowires

Hole Transport and Carrier Lifetime in InN Epilayers

Hole Localization in Bulk and 2D Lead-Halide Perovskites Studied by Time-Resolved Infrared Spectroscopy

Hole Migration and Optically Induced Charge Depletion in GaSb/GaAs Wetting Layers and Quantum Rings

Effect of Electron Distribution in InN Films on Infrared Reflectance Spectrum of Longitudinal Optical Phonon-Plasmon Interaction Region

Blueshift of Effective Band Gap in N-I-p-i Doping Superlattices As a Function of Optical Excitation Intensity

Urbach tail studies by luminescence filtering in moderately doped bulk InP

Short Period Inn/Ngan Superlattices. Experiment Versus Theory

Photoluminescence and Pressure Effects in Short Period Inn/Ngan Superlattices