Abstract:Photoluminescence (PL) of n-InN grown by molecular beam epitaxy with Hall concentrations from 3.6 x 10(17) to 1.0 x 10(18) cm(-3) demonstrates new features as compared with that of the samples of previous generation which are characterized by a higher carrier concentration. The striking dependences of PL spectra on carrier concentration, temperature, and excitation density give evidences of a fast energy relaxation rate of photoholes and their equilibrium distribution over localized states. The well resolved structure consisting of three peaks was observed in the PL spectra of these samples in the energy interval from 0.50 to 0.67 eV at liquid helium and nitrogen temperatures. We attributed one of two low-energy features of the spectra to the recombination of degenerate electrons with the holes trapped by deep acceptors with a binding energy of E-da = 0.050-0.055 eV and the other one is attributable to the LO-phonon replica of this band. The higher-energy PL peak is considered as a complex band formed by two mechanisms. The first one is related to the transitions of electrons to the states of shallow acceptors with a binding energy of E-sh = 0.005-0.010 eV and/or to the states of Urbach tail populated by photoholes. The second mechanism contributing to this band is the band-to-band recombination of free holes and electrons. Relative intensities of two higher-energy PL peaks were found to be strongly dependent on temperature and excitation power. At room temperature, the band-to-band recombination of free holes and electrons dominates in PL. Experimental results on PL and absorption are described by the model calculations under the assumptions of the band gap equal to 0.665-0.670 eV at zero temperature and zero carrier concentration and the non-parabolic conduction band with the effective mass at Gamma-point equal to 0.07 of free electron mass. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Low temperature photoluminescence properties of InGaN films grown on (01(1)over-bar2) Al2O3 and (0001) Al2O3 substrates by low pressure MOVPE

Low Temperature Photoluminescence Properties of InGaN Films Grown on (0 1 2) Al2O3 and (0 0 0 1) Al2O3 Substrates by Low Pressure MOVPE

Photoluminescence and Absorption in InGaN Films with InN Segregation

Growth and doping characteristics of InGaN films grown by low pressure MOCVD

The temperature dependence of optical properties of InGaN alloys

Optical and Electronic Properties of InGaN Thin Film Layers

Structural and Optical Properties of AlxGa1−xN (0.33 ≤ X ≤ 0.79) Layers on High-Temperature AlN Interlayer Grown by Metal Organic Chemical Vapor Deposition

Investigation of photoluminescence excitation spectra from GaN films grown by low-pressure MOVPE

Photoluminescence of N‐inn with Low Electron Concentrations

Study of Photoluminescence and Absorption in Phase-Separation InGaN Films

Luminescence property of GaN films with change of thickness

Study on the Photoluminescence Properties of Inn Films

Effect of low-temperature interlayer in active-region upon photoluminescence in multiple-quantum-well InGaN/GaN

Photoluminescence study of GaN film grown by ammoniating Ga2O3/Al2O3 deposited on Si(111) substrate

Photoluminescence Related to the Two Dimensional Electron Gas in Modulation-Doped Al_x Ga_(1-x)N/GaN Heterostructures

Photoluminescence Study of InGaN/GaN Quantum Dots Grown on Passivated GaN Surface

Optical Properties of Phase-Separated GaN 1− X P X Alloys Grown by Light-Radiation Heating Metal-Organic Chemical Vapour Deposition

Photoluminescence from the Nitrogen-Perturbed Above-Bandgap States in Dilute Gaas1-Xnx Alloys: A Microphotoluminescence Study

Effects of isochronal thermal annealing and hydrogenation on photoluminescence from n-type GaN films grown by metalorganic vapor phase epitaxy

Material Properties of Mocvd Grown Algan Layers Influenced by Indium-Incorporation

Polarization and Temperature Dependence of Photoluminescence of M-Plane GaN Grown on Γ-Lialo2 (100) Substrate