Investigation of photoluminescence excitation spectra from GaN films grown by low-pressure MOVPE

Jiaqi Duan,Borui Zhang,Guogang Qin,Guoyi Zhang,YuZhen Tong,Sixuan Jin,Zhijian Yang,GuangQing Yao

1996-01-01

Abstract:Photoluminescence excitation (PLE) spectra were measured for the light emissions of 370nm, 590nm and around 740-nm from undoped GaN films grown by low-pressure MOVPE. For the 590nm and 740nm emissions, the PLE peak of each sample is situated at 360nm. However, for the 370nm emission, the PLE peaks from most samples are situated at 280nm, but the double peaks at the wavelengths of 260 and 300nm instead of the single peak of 280nm in the PLE spectra are measured for certain GaN samples.