Boundary-Enhanced Momentum Relaxation of Longitudinal Optical Phonons in Gan
N. Ma,B. Shen,L. W. Lu,F. J. Xu,L. Guo,X. Q. Wang,F. Lin,Z. H. Feng,S. B. Dun,B. Liu
DOI: https://doi.org/10.1063/1.3681373
IF: 4
2012-01-01
Applied Physics Letters
Abstract:The influence of the channel geometry on the high-field electron transport properties has been investigated in n-type GaN at room temperature. It is found that electrons in narrow channels drift much faster than those in wide channels. This discrepancy is attributed to the boundary-enhanced momentum relaxation of longitudinal optical (LO) phonons, which increases the electron drift velocity through enhancing the electron energy dissipation while weakening the momentum relaxation. In narrow channels, the effective LO-phonon momentum relaxation time is about ∼0.67 ps. The suggested theoretical analysis coincides well with the important features of the experimental results.