Abstract:Microscopic photoluminescence (PL) emission intensity per electron is analyzed by integrating the imaging of PL and microscopic Raman scattering for two phonon modes, exhibiting excited electron density variation. This method enables the carrier dynamics analysis by integrating radiative processes and transports of carriers and thermal energy. Microscopic lattice vibration images of the E2(high) mode (E2H) and another mode of A1(LO) (A1L) or the higher energy branch of LO‐phonon−plasmon coupling mode (LOPC+) in a Ga0.95In0.05N film on a GaN template are obtained by Raman scattering spectroscopy using a 325 nm laser. The increase in temperature by increasing the laser power is obtained from the decrease in the energy of E2H and the theoretical formula comprising two terms based on the mode energy variation of the bulk material and the thermal strain effect. Using the obtained temperature and the energy shift of the LOPC+, the mapping images of the temperature and electron density in the x–y plane are simultaneously obtained. This image provides the spatial variation of photoluminescence (PL) emission efficiency, given as PL intensity per electron. This method enables the quantitative discussion on photo‐emission efficiency even in the regions of low or high carrier density affected by carrier transport. In the investigated area, a region with a lower PL efficiency is found despite a higher electron density and lower temperature increase than the surrounding region. This imaging analysis is feasible in integrating the carrier and thermal energy transports and recombination processes in carrier dynamics study.

Direct determination of free exciton binding energy from phonon-assisted luminescence spectra in GaN epilayers

Effect of Temperature on Longitudinal Optical Phonon-Assisted Exciton Luminescence in Heteroepitaxial GaN Layer

Temperature Dependent Photon Emission Spectra of Free Excitons in Phonon Field of GaN

Phonon-assisted Photoluminescence in Wurtzite GaN Epilayer

Spectral Features Of Lo Phonon Sidebands In Luminescence Of Free Excitons In Gan

Band-edge optical transitions in a nonpolar-plane GaN substrate: exciton–phonon coupling and temperature effects

Temperature Dependence of the Lo Phonon Sidebands in Free Exciton Emission of Gan

Fundamental energy gap of GaN from photoluminescence excitation spectra

Optical Properties of Light-Hole Excitons in GaN Epilayers

Determination of the electron-capture coefficients and the concentration of free electrons in GaN from time-resolved photoluminescence

Thermal Redistribution of Localized Excitons and Its Effect on the Luminescence Band in InGaN Ternary Alloys

The convergence of longitudinal excitons onto the Γ5 transverse exciton in GaN and the thermal activation energy of longitudinal excitons

Unique properties of photoluminescence excitation spectra in a Eu-doped GaN epitaxial film

Comparative Study on the Broadening of Exciton Luminescence Linewidth Due to Phonon in Zinc-Blende and Wurtzite Gan Epilayers

Analysis of Free Exciton Properties in GaAs Epitaxial Layers with the Improved Model of Photoconductivity Spectra

Luminescence Signature of Free Exciton Dissociation and Liberated Electron Transfer Across the Junction of Graphene/gan Hybrid Structure

Investigation of Free Exciton Properties in GaAs Epitaxial Layer

The Wannier-Mott Exciton, Bound Exciton, and Optical Phonon Replicas of Single-Crystal GaSe

Fano Resonance in the Luminescence Spectra of Donor Bound Excitons in Polar Semiconductors

Optical properties and band lineup in GaNxAs1-x/GaAs single quantum wells

Photoluminescence Emission Efficiency Analysis Methodology by Integrating Raman Spectroscopy of the A1(LO) and E2(high) Phonons in a GaInN/GaN Heterostructure