Abstract:Within the framework of the dielectric-continuum model, the equations of motion for p-polarization field in wurtzite quantum well are solved for the propagating optical phonon modes. The polarization eigenvector and the dispersion relation are derived by using the determinate method. The dispersion relation and phonon modes properties of the propagating optical phonons are investigated for GaN/AlN single QW. The numerical results show that the propagating phonons have a quantization character by a quantum number n that define its order. The propagating optical phonons are more dispersive for decreasing n, and the bands formed by the dispersion curves are narrower for higher order modes. The wave vector and width of quantum well have more important effect on phonon energy, with the increase of wave vector or width of quantum well, the energy of propagating optical phonon modes decrease in TO domain (between A(1) (TO) and E(1) (TO) frequency of GaN), and increase in LO domain (between GaN A(1) (LO) and E(1) (LO) frequency of GaN). The strain effects of QW structures have clear influence on the dispersion behavior of propagating optical phonons. The frequency of the propagating optical phonon modes is increased due to the strains of the QW structure.

Band-edge optical transitions in a nonpolar-plane GaN substrate: exciton–phonon coupling and temperature effects

Effect of Temperature on Longitudinal Optical Phonon-Assisted Exciton Luminescence in Heteroepitaxial GaN Layer

Temperature Dependent Photon Emission Spectra of Free Excitons in Phonon Field of GaN

Phonon-assisted Photoluminescence in Wurtzite GaN Epilayer

Spectral Features Of Lo Phonon Sidebands In Luminescence Of Free Excitons In Gan

Direct determination of free exciton binding energy from phonon-assisted luminescence spectra in GaN epilayers

Temperature-related Exciton Features on the Ga-/N-Faces of a Free-Standing HVPE GaN

Optical Transitions In Ganas/Gaas Single Quantum Well

Photoluminescence and Raman Scattering Signatures of Anisotropic Optical Properties in Freestanding M-, A- and C-Plane GaN Substrates

Time-resolved photoluminescence spectroscopy of GaN excitonic transitions

Propagating Optical Phonons and Their Properties in GaN/AlN Quantum Wells

Temperature Dependence of the Lo Phonon Sidebands in Free Exciton Emission of Gan

Interband Luminescence and Absorption of GaNAs/GaAs Single-Quantum-well Structures

Temperature dependence of the optical phonon reflection band in GaP

Comparative Study on the Broadening of Exciton Luminescence Linewidth Due to Phonon in Zinc-Blende and Wurtzite Gan Epilayers

Interband Transition Physics from the Absorption Edge in GaN: New Prospects from Numerical Analysis

Free Excitonic Transitions in GaN, Grown by Metal-Organic Chemical-Vapor Deposition

Optical Study of Electronic States in Gaasn

Optical Properties and Exciton Localization in Ganas/Gaas

Optical properties and band lineup in GaNxAs1-x/GaAs single quantum wells

Boundary-Enhanced Momentum Relaxation of Longitudinal Optical Phonons in Gan