Exciton-phonon interactions in quantum wells and superlattices

K.J. Nash,D.J. Mowbray
DOI: https://doi.org/10.1016/0022-2313(89)90065-3
IF: 3.6
1989-12-01
Journal of Luminescence
Abstract:The effects of the exciton-phonon interaction on the properties of quantum wells and superlattices are reviewed. The phonon sidebands of the absorption and photoluminescence spectra, the lifetime broadening of the exciton line at room temperature, and resonant Raman scattering are discussed. Most experimental work has been performed on the GaAs/(Al,Ga)As, (In, Ga)As/(In, Al)As and (In, Ga)As/InP material systems, but results for these III–V compounds are compared, where possible, with those for the more polar II–VI semiconductors. The importance of exciton-phonon interactions for room temperature devices based on the exciton absorption, and for photoluminescence spectroscopy as a semiconductor characterisation technique, is emphasised.
optics
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