Exciton-phonon interactions and exciton dephasing in semiconductor quantum-well heterostructures

I. V. Bondarev,S. A. Maksimenko,G. Ya. Slepyan,I. L. Krestnikov,A. Hoffmann
DOI: https://doi.org/10.1103/physrevb.68.073310
IF: 3.7
2003-08-29
Physical Review B
Abstract:We have investigated exciton-phonon coupling and related exciton dephasing processes in monolayer semiconductor heterostructures with localized quasi two-dimensional (2D) excitonic states. The calculated lateral size dependence of low-temperature Huang-Rhys factors indicates the enhancement of exciton-phonon coupling with decreasing the lateral size of the quasi-2D exciton localization area. This entails the increase of exciton dephasing. At low temperatures, the exciton absorption line exhibits an essentially non-Lorentzian asymmetric shape with the asymmetry increasing with the decrease of temperature and the lateral size of the quasi-2D exciton localization area.
physics, condensed matter, applied,materials science, multidisciplinary
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