Electron-phonon interaction in quantum-dot/quantum-well semiconductor heterostructures

F. Comas,Nelson Studart
DOI: https://doi.org/10.1103/PhysRevB.69.235321
2003-09-06
Abstract:Polar optical phonons are studied in the framework of the dielectric continuum approach for a prototypical quantum-dot/quantum-well (QD/QW) heterostructure, including the derivation of the electron-phonon interaction Hamiltonian and a discussion of the effects of this interaction on the electronic energy levels. The particular example of the CdS/HgS QD/QW is addressed and the system is modelled according to the spherical geometry, considering a core sphere of material "1" surrounded by a spherically concentric layer of material "2", while the whole structure is embedded in a host matrix assumed as an infinite dielectric medium. The strength of the electron-LO phonon coupling is discussed in details and the polaronic corrections to both ground state and excited state electron energy levels are calculated. Interesting results concerning the dependence of polaronic corrections with the QD/QW structure size are analyzed.
Mesoscale and Nanoscale Physics
What problem does this paper attempt to address?
This paper attempts to solve the problem of electron - phonon interactions in quantum dot/quantum well (QD/QW) semiconductor heterostructures. Specifically, the author focuses on the study of polar optical phonons within the framework of the dielectric continuum approximation, including deriving the electron - phonon interaction Hamiltonian and discussing the influence of this interaction on electron energy levels. ### Research Background and Problem Description 1. **Quantum Dot/Quantum Well Heterostructures**: - These structures are composed of materials such as CdS and HgS and have interesting size - dependent optical properties. - In these structures, a core material (such as CdS) is surrounded by another layer of material (such as β - HgS), and the entire system is embedded in an infinite dielectric medium. 2. **Electron - Phonon Interactions**: - The author pays special attention to the interaction between longitudinal optical (LO) phonons and electrons. - By studying this interaction, one can understand its influence on electron energy levels, especially the polaronic effects, that is, the energy level shift caused by electron - phonon coupling. 3. **Models and Methods**: - Using a spherical geometry model, consider a core sphere (material "1") surrounded by a spherical concentric layer (material "2"). - Apply the dielectric continuum approximation (DCA) to derive the electric potential of internal LO phonons and further derive the electron - LO - phonon interaction Hamiltonian. 4. **Main Problems**: - **Deriving Electric Potential**: How to theoretically derive the electric potential of internal LO phonons. - **Calculating Energy Level Shift**: How to estimate the electron energy level shift caused by electron - LO - phonon interaction. - **Analyzing Size Dependence**: Study how the polaron correction changes with the size of the QD/QW structure. ### Formula Summary - **Relationship between Dielectric Constant and Frequency**: \[ \varepsilon(\omega)=\frac{\varepsilon_{\infty}(\omega^{2}-\omega_{L}^{2})}{\omega^{2}-\omega_{T}^{2}} \] where \(\varepsilon_{0}\) and \(\varepsilon_{\infty}\) are the static and high - frequency dielectric constants respectively, and \(\omega_{L}\) and \(\omega_{T}\) are the longitudinal and transverse phonon frequencies. - **Expression of Electric Potential**: \[ \hat{\phi}_{qlm}^{(i)}(r,\theta,\phi)=\frac{1}{2}A_{l}^{(i)}(x_{i})\left[f_{qlm}^{(i)}(r)\hat{a}_{lm}(x_{i})+ \text{h.c.}\right] \] where \(A_{l}^{(i)}(x_{i})\) is a normalization constant, and \(f_{qlm}^{(i)}(r)\) is a radial function multiplied by a spherical harmonic function. - **Hamiltonian**: \[ \hat{H}_{e}^{(i)}=-e\sum_{qlm}\hat{\phi}_{qlm}^{(i)}(r,\theta,\phi) \] ### Conclusion Through the above research, the author shows how to quantitatively describe the electron - LO - phonon interaction and its influence on electron energy levels in QD/QW heterostructures. These results are of great significance for understanding the physical characteristics in nanostructure devices.