Abstract:The optical dielectric function of ZnGeN$_2$ is calculated from the interband transitions using the energy bands calculated in the quasiparticle self-consistent (QS)$G\hat W$ method using two different levels of approximation: the independent particle approximation (IPA) and the Bethe-Salpeter Equation (BSE) approach. The first allows us to relate peaks in $\varepsilon_2(\omega)$ to specific bands and {\bf k}-points but does not include excitonic effects, while the latter does. The corresponding changes in the shape of $\varepsilon_2(\omega)$ are found to be similar to those in GaN. The screened Coulomb interaction $\hat W$ is here calculated including electron-hole interactions in the polarization function and gives a band structure already going beyond the random phase approximation. The static dielectric constants including only electronic screening, commonly referred to as $\varepsilon^\infty$, were calculated separately by extrapolating the wave vector dependent macroscopic $\varepsilon_M({\bf q},\omega=0)$ for ${\bf q}\rightarrow0$. Below the quasiparticle gap, we find three bound excitons optically active for different polarization. The convergence of these bound excitons with respect to the density of the {\bf k}-mesh used in the BSE is studied and found to require a fine mesh. It is also found that these bound excitons originate from only the lowest conduction band and the top three valence bands. To incorporate the lattice screening, we include a scaling factor $(\varepsilon^\infty/\varepsilon^0)^2$, which allows us to obtain exciton binding energies of the correct order of magnitude similar to those in GaN. The excitons are related to each of the three fold split valence bands and the splittings of the latter are also studied as function of strain. Finally, a relation between the anisotropic effective masses and the valence band splitting is pointed out and explained.

Optical Properties of Light-Hole Excitons in GaN Epilayers

Optical Properties and Exciton Localization in Ganas/Gaas

High Magnetic Field Studies Of Charged Exciton Localization In Gaas/Alxga1-Xas Quantum Wells

Direct determination of free exciton binding energy from phonon-assisted luminescence spectra in GaN epilayers

Band-edge optical transitions in a nonpolar-plane GaN substrate: exciton–phonon coupling and temperature effects

Spectral Features Of Lo Phonon Sidebands In Luminescence Of Free Excitons In Gan

Effect of Temperature on Longitudinal Optical Phonon-Assisted Exciton Luminescence in Heteroepitaxial GaN Layer

Comparative Study on the Broadening of Exciton Luminescence Linewidth Due to Phonon in Zinc-Blende and Wurtzite Gan Epilayers

Room-Temperature Bound Exciton with Long Lifetime in Monolayer GaN

Optical properties and band lineup in GaNxAs1-x/GaAs single quantum wells

Optical Study of Electronic States in Gaasn

Temperature Dependent Photon Emission Spectra of Free Excitons in Phonon Field of GaN

Unique properties of photoluminescence excitation spectra in a Eu-doped GaN epitaxial film

Optical Transitions In Ganas/Gaas Single Quantum Well

Phonon-assisted Photoluminescence in Wurtzite GaN Epilayer

Surface Emission Of Inxga1-Xn Epilayers Under Strong Optical Excitation

Photoluminescence Properties of a GaN0.015As0.985/GaAs Single Quantum Well under Short Pulse Excitation

Time-Resolved Exciton Luminescence In Gan Grown By Metalorganic Chemical-Vapor-Deposition

Steady and Transient Optical Properties of Cubic Ingan Epilayers

Selectively Excited Photoluminescence of GaAs1−xNx Single Quantum Wells

Comparison of interband related optical transitions and excitons in ZnGeN$_2$ and GaN