Abstract:Photoluminescence (PL) of n-InN grown by molecular beam epitaxy with Hall concentrations from 3.6 x 10(17) to 1.0 x 10(18) cm(-3) demonstrates new features as compared with that of the samples of previous generation which are characterized by a higher carrier concentration. The striking dependences of PL spectra on carrier concentration, temperature, and excitation density give evidences of a fast energy relaxation rate of photoholes and their equilibrium distribution over localized states. The well resolved structure consisting of three peaks was observed in the PL spectra of these samples in the energy interval from 0.50 to 0.67 eV at liquid helium and nitrogen temperatures. We attributed one of two low-energy features of the spectra to the recombination of degenerate electrons with the holes trapped by deep acceptors with a binding energy of E-da = 0.050-0.055 eV and the other one is attributable to the LO-phonon replica of this band. The higher-energy PL peak is considered as a complex band formed by two mechanisms. The first one is related to the transitions of electrons to the states of shallow acceptors with a binding energy of E-sh = 0.005-0.010 eV and/or to the states of Urbach tail populated by photoholes. The second mechanism contributing to this band is the band-to-band recombination of free holes and electrons. Relative intensities of two higher-energy PL peaks were found to be strongly dependent on temperature and excitation power. At room temperature, the band-to-band recombination of free holes and electrons dominates in PL. Experimental results on PL and absorption are described by the model calculations under the assumptions of the band gap equal to 0.665-0.670 eV at zero temperature and zero carrier concentration and the non-parabolic conduction band with the effective mass at Gamma-point equal to 0.07 of free electron mass. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Fundamental energy gap of GaN from photoluminescence excitation spectra

Direct determination of free exciton binding energy from phonon-assisted luminescence spectra in GaN epilayers

Similarity of the 3.42 eV and near-band-edge 3.47 eV luminescence bands in GaN

Photoluminescence Spectroscopy of Band Gap Shrinkage in GaN

Comparison of interband related optical transitions and excitons in ZnGeN$_2$ and GaN

Determination of the electron-capture coefficients and the concentration of free electrons in GaN from time-resolved photoluminescence

Temperature-related Exciton Features on the Ga-/N-Faces of a Free-Standing HVPE GaN

Temperature Dependent Photon Emission Spectra of Free Excitons in Phonon Field of GaN

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Free Excitonic Transitions in GaN, Grown by Metal-Organic Chemical-Vapor Deposition

Unusual Properties of the Fundamental Band Gap of InN

Unique properties of photoluminescence excitation spectra in a Eu-doped GaN epitaxial film

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VEELS Band Gap Measurements Using Monochromated Electrons

Conduction Band Offset and Electron Effective Mass in Gainnas/Gaas Quantum-Well Structures with Low Nitrogen Concentration

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Band-edge optical transitions in a nonpolar-plane GaN substrate: exciton–phonon coupling and temperature effects