Similarity of the 3.42 eV and near-band-edge 3.47 eV luminescence bands in GaN

T. V. Shubina,S. V. Ivanov,V. N. Jmerik,D. D. Solnyshkov,N. A. Cherkashin,P. S. Kop'ev,A. Vasson,J. Leymarie,K. F. Karlsson,P. O. Holtz,B. Monemar

DOI: https://doi.org/10.48550/arXiv.cond-mat/0311191

2003-11-09

Abstract:We demonstrate that the 3.42 eV photoluminescence (PL) band in GaN is of the same intrinsic origin as the near-edge $\sim$3.47 eV band, but arises from regions of inversed polarity characterized by different strain and growth rate. Two absorption edges are thermally detected at 0.35 K in nanocolumn structures, exhibiting both bands. Micro-PL studies have shown similar temperature/power behavior of these bands, with a competition in intensity in closely spaced spots accompanied by alterations of exciton level ordering. Strain-induced one-dimensional carrier confinement in small inversion domains likely explains the discrete narrow lines observed between the bands.

Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is about the similarity between the 3.42 eV and the near - band - edge 3.47 eV emission bands in gallium nitride (GaN) and their origins. Specifically, the researchers explored whether these two emission bands have the same intrinsic origin, that is, whether they both originate from the near - band - edge exciton states but occur in spatially different and usually oppositely polarized regions. In addition, the paper also discussed the performance of these emission bands under different strain conditions, especially their behavior in nanopillar structures, and the impact of these phenomena on the optical properties of the material.

### Main problems in the paper:
1. **Similarity between the 3.42 eV and 3.47 eV emission bands**: The researchers hypothesized that these two emission bands have the same intrinsic origin, both being emissions from the near - band - edge exciton states, but occurring in different regions, which are usually oppositely polarized.
2. **Effects of strain and growth conditions**: The researchers explored how strain and growth conditions affect the characteristics of these two emission bands, especially their performance in nanopillar structures.
3. **Role of inversion domains (IDs)**: The researchers considered inversion domains (IDs) to be the main cause of the splitting of the emission bands and verified this hypothesis through experiments and simulations.

### Main conclusions:
- **Inversion domains (IDs)**: Inversion domains are common structural defects in GaN, and their existence leads to the splitting of the 3.42 eV and 3.47 eV emission bands.
- **Strain effect**: Strain plays a crucial role in the formation of these emission bands. In particular, the strain in the inversion domain regions leads to the appearance of the 3.42 eV emission band.
- **Microstructure**: The differences in strain and growth rate in the inversion domain regions lead to the non - uniform distribution of these emission bands, especially in nanopillar structures.
- **Quantum confinement effect**: Under certain conditions, the inversion domain regions can form one - dimensional quantum wires, resulting in the appearance of discrete narrow peaks in the 3.42 eV emission band.

Through these studies, the paper provides a new perspective for understanding the complex optical properties in GaN, and is of particular significance for the application of nanopillar structures.