Analysis of Free Exciton Properties in GaAs Epitaxial Layers with the Improved Model of Photoconductivity Spectra

FM WU,Y SHI,M PARENTEAU,A JORIO,C CARLONE
DOI: https://doi.org/10.1002/pssb.2221860111
1994-01-01
Abstract:The transition energy, binding energy, intensity, broadening, and lifetime of the free-exciton transitions in GaAs epitaxial layers are well investigated experimentally and theoretically. The improved model of photoconductivity spectra which accounts for the contribution of many excitonic levels and two broadening mechanisms is presented. Moreover, the variation of the free-exciton properties with increasing epitaxial layer thickness is discussed.
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