Abstract:In this study, ultrafast dynamics of photoexcited carriers in an intrinsic CdTe film are investigated deeply and systematically as a function of carrier density and excess energy using femtosecond-resolved pump–probe transient differential transmission spectroscopy. A dynamic model is developed based on an interband transition absorption model in direct bandgap semiconductors by introducing the dynamics of thermalization, cooling and recombination of photoexcited carriers into the interband transition absorption model. Then, the model is used to best fit the measured ultrafast dynamics to retrieve the initial temperature of thermalized electrons and time constants of the thermalization, cooling and recombination dynamic processes as a function of carrier density and excess energy. The increase with carrier density and the decrease with excess energy of thermalization time constant reveal that thermalization process of photoexcited carriers is dominated by carrier-phonon scatterings. We find for the first time that cooling of thermalized carriers depend strongly on carrier density and excess energy, and cooling time constant varies in a wide range from 0.2 to 5 ps. It is also found that carrier recombination in the intrinsic CdTe film is dominated by the radiative recombination of electron-hole pairs, rather than Auger recombination as reported in doped CdTe films. These new results are very important to understanding of microscopic mechanism of relaxation processes of photoexcited carriers and applications of CdTe-based optoelectronic devices.

Investigation of free excitons in undoped MOCVD GaAs epitaxial layer of different thicknesses by photoconductivity

Investigation of Free Exciton Properties in GaAs Epitaxial Layer

Analysis of Free Exciton Properties in GaAs Epitaxial Layers with the Improved Model of Photoconductivity Spectra

Study of Transient Photoconductivity of Gan Epilayer Grown by Metalorganic Chemical Vapor Deposition

Defect States in Cubic GaN Epilayer Grown on GaAs by Metalorganic Vapor Phase Epitaxy

Excitation-density and Excess-Energy Dependence of Ultrafast Dynamics of Photoexcited Carriers in Intrinsic Bulk CdTe

Transition from Bound to Free Excitons Observed in Deep- Ultraviolet Photoluminescence of Aln Grown by Mocvd

Optical properties and band lineup in GaNxAs1-x/GaAs single quantum wells

Assessment of Optical and Phonon Characteristics in MOCVD-Grown (AlxGa1-x)0.5In0.5P/n+-GaAs Epifilms

Effect of Growth Condition on Electrical-Properties of Mbe and Mocvd-Alinas

Optical property studies of GaN films grown by MOCVD

Free Electron Dynamics and Intrinsic Mobility in Ga2O3 Revealed by Transient Terahertz Conductivity

Direct determination of free exciton binding energy from phonon-assisted luminescence spectra in GaN epilayers

Investigation of dislocations and traps in MBE grown p-InGaAs/GaAs heterostructures

Effect of Substrate Photoexcitation on Channel Conduction in A Modulation-Doped Alxga1-Xas/Gaas Heterostructure

Electronic- and band-structure evolution in low-doped (Ga,Mn)As

Growth of and optical emission from GaMnAs thin films grown by molecular beam epitaxy

Photoreflectance study of the fundamental optical properties of (Ga,Mn)As epitaxial films

Optical absorption of interlayer excitons in transition-metal dichalcogenide heterostructures

Photoconductivity in In_xGa_1-xN Epilayers

Characteristics of Optoelectronic Measurement for Wide Band-Gap Semiconductor Materials