Abstract:The crystal structures, transition paths, elastic properties, and electronic structures are investigated comprehensively by first-principles calculations for ZnO. The sequence of the cohesion energy in ZnO phases is predicted as cesium-chloride (B2) < lead-oxide (B10) < tungsten-carbides (B h ) < nickel-arsenide (B8 1 ) < rock-salt (B1) < germanium-phosphide (GeP) < boron-nitride (B k ) < beryllium-oxide (BCT) < zinc-blende (B3) < wurtzite (B4) via density functional theory (DFT), where B4 is the most stable structure and B2 is the best high-pressure candidate, respectively. The structural transition paths are pressure-induced along the tetragonal and hexagonal in ZnO, where the intermediate phases are BCT, GeP and B10 along the tetragonal paths and B8 1 , B k and B h phases along the hexagonal paths. Furthermore, the results of elastic constants indicate that the whole mechanical performance decreases with ascending pressure for the B1, B2 and B3 phases in ZnO. Nevertheless, the elastic constants C 11 , C 12 , C 13 and C 33 all improve for the B4, B8 1 , GeP, B k and B h phases, revealing a high resistance to deformation along the , and directions. Finally, the bandgap is corrected successfully for ZnO structures with the DFT + U approach, indicating that the structures are all wide-bandgap semiconductors, where the B3, B4, B8 1 , BCT and B k structures are direct bandgap, and the B1, B2, B10, GeP and B h structures are indirect.

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