The synthesis and formation mechanism of nonpolar InN nanoplates

Wenqing Song,Tao Li,Lei Zhang,Wenhui Zhu,Liancheng Wang

DOI: https://doi.org/10.1039/d1ce00981h

IF: 3.756

2021-01-01

CrystEngComm

Abstract:High-crystal-quality nonpolar indium nitride (InN) nanoplates were synthesized via deploying controllable chemical vapor deposition (CVD) technology using the M -plane of GaN nanowires (NWs) as a template.

chemistry, multidisciplinary,crystallography

What problem does this paper attempt to address?

Synthesis of [100] Wurtzite InN Nanowires and [011] Zinc-Blende InN Nanorods

Nie Chao,Zhang Rong,Xie Zi-Li,Xiu Xiang-Qiang,Liu Bin,Fu De-Yi,Liu Qi-Jia,Han Ping,Gu Shu-Lin,Shi Yi,Zheng You-Dou

DOI: https://doi.org/10.1088/0256-307x/25/5/070

2008-01-01

Abstract:One-dimensional wurtzite InN nanowires and zincblende InN nanorods are prepared by chemical vapour deposition (CVD) method on natural cleavage plane (110) of GaAs. The growth direction of InN nanowires is [100], with wurtzite structure. The stable crystal structure of InN is wurtzite (w-InN), zincblende structure (z-InN) is only reported for 2D InN crystals before. However, in this work, the zincblende InN nanorods [011] are synthesized and characterized. The SEM and TEM images show that every nanorod shapes a conical tip, which can be explained by the anisotropy of growth process and the theory of Ehrlich-Schwoebel barrier.
Synthesis and Growth of InN with Pre-deposited Indium Nanodots Method on MOCVD at Low Temperature

XIE Zi-li,ZHANG Rong,XIU Xiang-qian,BI Zhao-xia,LIU Bin,PU Lin,CHEN Dun-jun,HAN Ping,GU Shu-lin,JIANG Ruo-lian,ZHU Shun-ming,ZHAO Hong,SHI Yi,ZHENG You-dou

DOI: https://doi.org/10.3969/j.issn.1000-985x.2005.06.014

2005-01-01

Abstract:The cubic InN films were deposited on the sapphire substrates using low-pressure MOCVD at low temperature.The technique of pre-deposition of the In nanodots was applied,then the InN films were synthesized and grown.X-ray diffraction(XRD) and X-ray photoelectron spectra(XPS) show that pre-deposition of the In nanodots is able to promote the growth of InN,and meanwhile,suppress the In segregation in the grown layer.Atomic force microscope(AFM) images of InN films indicate that pre-deposition of the In nanodots not only enhances the density of nucleate sites,but also facilitate the coalescence among the InN islands.Careful inspection suggests that the preferential bond of pre-deposited In atoms with N atoms,instead of with In atoms,is responsible for the above phenomena.
Indium nitride from indium iodide at low temperatures: synthesis and their optical properties

Changzheng Wu,Tanwei Li,Lanyu Lei,Shuangquan Hu,Yi Liu,Yi Xie

DOI: https://doi.org/10.1039/b510426b

IF: 3.3

2005-01-01

New Journal of Chemistry

Abstract:In this paper, we present an effective synthetic protocol to produce high quality InN nanocrystals using indium iodide (InI3), one member of the family of indium halides, as the indium source at a low temperature of <250 degrees C (far below the decomposition temperature of InN). Notably, reports on InN synthesized from indium halides are rare due to the lack of well-defined synthetic protocols. Here, indium iodide (InI3), with a stronger covalent ability, can also prevent the In3+ from being reduced to elemental indium, and then InN is formed. This synthetic protocol not only provides an alternative method to successfully synthesize high-quality InN, but is also useful to fabricate other functional materials by using stronger covalent reactants to prevent reduction/oxidation in the oxidation/reduction reaction process, respectively. Furthermore, we also report the first example of an orientation-attachment process occurring between the metal nitride particles. The high purity of the InN nanoparticles can be seen from the XPS and HRTEM results, showing the as-obtained products possess no obvious iodine or amorphous layers on the surface of particles, respectively. By controlling the parameters of reaction temperature and time, nanoparticles with different sizes were obtained as the final products. Raman and IR results indicate that our experimental data were consistent with the theoretical prediction and this gives further evidence that high quality InN nanocrystals were obtained. Moreover, it has been shown that the near-infrared band around 0.7 eV is characteristic of these samples and there were no obvious peaks around 1.9 eV, indicating that these InN nanocrystals exhibit a band gap of 0.7 eV, rather than the previously accepted 1.9 eV.
From powder to nanowire: A simple and environmentally friendly strategy for optical and electrical GaN nanowire films

Yuqing Wang,Ruzhi Wang,Yujie Li,Yuefei Zhang,Mankang Zhu,Biben Wang,Hui Yan

DOI: https://doi.org/10.1039/c2ce26555a

IF: 3.756

2013-01-01

CrystEngComm

Abstract:Gallium nitride nanowires (GaN NWs) were successfully grown on silicon substrates deposited with a thin gold film by plasma-assisted hot filament chemical vapor deposition (CVD), where GaN powder was used as the Ga source and nitrogen and hydrogen gases were used for the reactive gases. The diameters of synthesized GaN NWs are in a range of 40-150 nm and the lengths of some of the NWs are up to over 10 mu m. The GaN NWs crystallize in a wurtzite structure and they are grown in alignment or bending modes depending on the growth conditions. The photoluminescence spectra exhibit five emission bands at about 379, 396, 467, 481 and 491 nm, which are related to the band edge emission, defects and impurities of GaN NWs, respectively. Furthermore, the excellent field emission (FE) properties of GaN NWs were observed, and the FE results reveal that the GaN NWs have a low turn-on field of 1.66 V mu m(-1). It supplies a simple strategy to prepare GaN NW films for optical and electrical applications.
Bulk-quantity synthesis of single-crystalline indium nitride nanobelts

Shudong Luo,Weiya Zhou,Zengxing Zhang,Xinyuan Dou,Lifeng Liu,Xiaowei Zhao,Dongfang Liu,Li Song,Yanjuan Xiang,Jianjun Zhou,Sishen Xie

DOI: https://doi.org/10.1016/j.cplett.2005.06.053

IF: 2.719

2005-01-01

Chemical Physics Letters

Abstract:Wurtzite InN nanobelts have been synthesized in bulk quantities by means of in situ nitriding indium oxide powders in ammonia flux, with a high yield, high purity and good reproducibility. As-synthesized InN nanobelts have typical widths of 1–5μm, thickness of 40–50nm and lengths of tens to hundreds of microns imaged by scanning electron microscopy. Transmission electron microscopy reveals that the synthesized InN nanobelts are single crystalline in [0001] orientation and preferentially enclosed by top surfaces ±(011¯0)/side surfaces ±(21¯1¯0). Photoluminescence spectrum of InN nanobelts at room temperature shows a strong emission peak centered at 704nm (1.76eV).
Nonpolar Growth And Characterization Of Inn Overlayers On Vertically Oriented Gan Nanorods

Xian Sun,Desheng Jiang,Wenbao Liu,JiHong Zhu,Hui Wang,Zongshun Liu,Jianjun Zhu,Yutian Wang,Degang Zhao,,Shuming Zhang,Liping You,Renmin Ma,Hui Yang

DOI: https://doi.org/10.1063/1.3177347

IF: 2.877

2009-01-01

Journal of Applied Physics

Abstract:Nanostructured hexagonal InN overlayers were heteroepitaxially deposited on vertically oriented c-axis GaN nanorods by metal-organic chemical vapor deposition. InN overlayers grown in radial directions are featured by a nonpolar heteroepitaxial growth mode on GaN nanorods, showing a great difference from the conventional InN growth on (0001) c-plane GaN template. The surface of InN overlayers is mainly composed of several specific facets with lower crystallographic indices. The orientation relationship between InN and GaN lattices is found to be [0001](InN) parallel to [0001](GaN) and [1100](InN)parallel to[1100](GaN). A strong photoluminescence of InN nanostructures is observed. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3177347]
Synthesis of GaN network by nitridation of hexagonal ε-Ga2O3 film

Xiaochuan Xia,Hongwei Liang,Xinlei Geng,Yuanpeng Chen,Chao Yang,Yang Liu,Rensheng Shen,Mengxiang Xu,Guotong Du

DOI: https://doi.org/10.1007/s10854-016-5835-0

2016-10-08

Abstract:GaN network structure was synthesized on a hexagonal ε-Ga2O3 film by performing thermal nitridation under ammonia atmosphere in III-nitride MOCVD system. High-resolution X-ray diffraction revealed that the GaN had a (0002) preferred orientation, and no other polymorphs of GaN were detected. X-ray photoelectron spectroscopy results confirmed the formation of Ga–N bonds as well as other element status induced from nitridation process. According to field-emission scanning electron microscopy and atomic force microscopy images, the surface of GaN layer shows network morphology, which was caused by etching from hydrogen gas along GaN grain boundary. Our results indicated the potential applications of nitrided GaN/ε-Ga2O3 structure in fabricating novel electronic and optoelectronic devices.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
Large-scale cubic InN nanocrystals by a combined solution- and vapor-phase method under silica confinement

Zhuo Chen,Yanan Li,Chuanbao Cao,Songrui Zhao,Saeed Fathololoumi,Zetian Mi,Xingyan Xu

DOI: https://doi.org/10.1021/ja209072v

2012-01-18

Abstract:Large-scale cubic InN nanocrystals were synthesized by a combined solution- and vapor-phase method under silica confinement. Nearly monodisperse cubic InN nanocrystals with uniform spherical shape were dispersed stably in various organic solvents after removal of the silica shells. The average size of InN nanocrystals is 5.7 ± 0.6 nm. Powder X-ray diffraction results indicate that the InN nanocrystals are of high crystallinity with a cubic phase. X-ray photoelectron spectroscopy and energy-dispersive spectroscopy confirm that the nanocrystals are composed of In and N elements. The InN nanocrystals exhibit infrared photoluminescence at room temperature, with a peak energy of ~0.62 eV, which is smaller than that of high-quality wurtzite InN (~0.65-0.7 eV) and is in agreement with theoretical calculations. The small emission peak energy of InN nanocrystals, as compared to other low-cost solution or vapor methods, reveals the superior crystalline quality of our samples, with low or negligible defect density. This work will significantly promote InN-based applications in IR optoelectronic device and biology.
Synthesis Of Long Indium Nitride Nanowires With Uniform Diameters In Large Quantities

Sd Luo,Wy Zhou,Zx Zhang,Lf Liu,Xy Dou,Jx Wang,Xw Zhao,Df Liu,Y Gao,L Song,Yj Xiang,Jj Zhou,Ss Xie

DOI: https://doi.org/10.1002/smll.200500053

IF: 13.3

2005-01-01

Small

Abstract:Large quantities of indium nitride (InN) nanowires are synthesized by the in situ nitriding of indium oxide (In2O3) powders in an ammonia (NH3) flux. Tens of milligrams of nanowires are obtained in one batch. Every 100 mg of In2O3 starting powder can produce up to 65 mg of InN nanowires under the optimized conditions. The synthesized nanowires grow along the [001] direction with excellent crystallinity. They are of high purity and are 30-50 mu m in length with an almost uniform diameter of about 100 nm. Photoluminescence measurements of the nanowires exhibit a strong peak at 707 nm. An optical bandgap of about 1.7 eV is estimated based on the absorption spectrum. The experimental results also demonstrate that the approach of nitriding In2O3 powders in situ is feasible for the synthesis of high-purity InN nanowires in large quantities, with good reproducibility and without catalyst materials. The synthesis of InN nanowires in large quantities would be of benefit to the further study and understanding of their intrinsic properties, as well as being advantageous for their potential application in nanodevices.
Crystalline Quality of InxAl1-xN with Different Indium Contents Around Lattice-Matched to GaN

Zhenlin Miao,Tongjun Yu,Bo Shen,Fujun Xu,Jie Song,Fang Lin,Lubing Zhao,Zhijian Yang

DOI: https://doi.org/10.1109/icsict.2008.4734632

2008-01-01

Abstract:200 nm thick InxAl1-xN epilayers around lattice-matched to GaN were grown on GaN templates by MOCVD. The elastic strain, surface morphology and crystalline quality of the InxAl1-xN were evaluated by high resolution X-ray diffraction (HRXRD) measurements, scanning electron microscopy (SEM) images and Rutherford backscattering spectroscopy (RBS) analyses. The strain effect, as while as the influences of indium and the GaN templates with different dislocation densities on the quality of InxAl1-xN epilayers were discussed. It is found that the crystalline quality was quite good when InxAl1-xN around lattice matched to GaN and degraded when InxAl1-xN under relatively large tensile or compressive strain accompanied by formation of crack or pits of reverse pyramid. The micro-morphology observations of InxAl1-xN layers with different indium compositions showed that the formation of dislocations was related with indium and compressive strain in InxAl1-xN layers. Furthermore, more pits were observed in lattice matched InxAl1-xN layers on GaN template of high dislocation density than samples on GaN template with low dislocation density GaN. It is believed that threading dislocations induced by GaN template might be a part of origin of the pits, and modulate the effect of compressive stain on the InxAl1-xN quality.
Lattice-polarity-driven epitaxy of hexagonal semiconductor nanowires

ping wang,ying yuan,chao zhao,xinqiang wang,xiantong zheng,xin rong,tao wang,bowen sheng,q wang,yongqiang zhang,lifeng bian,xuelin yang,fujun xu,zhixin qin,xinzheng li,xixiang zhang,bo shen

DOI: https://doi.org/10.1021/acs.nanolett.5b04726

IF: 10.8

2016-01-01

Nano Letters

Abstract:Lattice-polarity-driven epitaxy of hexagonal semiconductor nanowires (NWs) is demonstrated on InN NWs. In polarity InN NWs form typical hexagonal structure with pyramidal growth front, whereas N-polarity InN NWs slowly turn to the shape of hexagonal pyramid and then convert to an inverted pyramid growth, forming diagonal pyramids with flat surfaces and finally coalescence with each other. This contrary growth behavior driven by lattice-polarity is most likely due to the relatively lower growth rate of the (0001) plane, which results from the fact that the diffusion barriers of In and N adatoms on the (000 (1) over bar) plane (0.18 and 1.0 eV, respectively) are about 2-fold larger in magnitude than those on the (000 (1) over bar) plane (0.07 and 0.52 eV), as calculated by first-principles density functional theory (DFT). The formation of diagonal pyramids for the N-polarity hexagonal NWs affords a novel way to locate quantum dot in the kink position, suggesting a new recipe for the fabrication of dot-based devices.
Catalyst Synthesis and Growth of Indium Nitride Nanodots

ZL Xie,R Zhang,ZX Bi,B Liu,XQ Xiu,SL Gu,B Shen,Y Shi,YD Zheng

DOI: https://doi.org/10.1109/sim.2005.1511406

2004-01-01

Abstract:The technique of indium droplets catalyst is used for the synthesis of InN nanodots on (0001) sapphire substrates via metalorganic chemical vapor ldeposition (MOCVD) technique using trimethyindium(TMIn: (CH3)(3)In) and NH3. The morphology evolution of the InN nanodots are studied by AFM. The structure of the prepared sample is characterized by X-ray diffraction (XRD) and Raman scattering. And the XPS has been used to investigate the elemental composition of InN nanodots. Our results demonstrate that In droplets catalyst MOCVD can be a very effective way to grow InN nanodots.
Enhancing indium bilayer nitridation through novel hydrogen insertion process in InN epitaxy: A kinetic mechanism

Jin Zhou,Yansheng Liu,Xinwei Dong,Fei Guo,Jianbo Fu

DOI: https://doi.org/10.1063/5.0179410

IF: 2.877

2024-01-22

Journal of Applied Physics

Abstract:InN holds great promise for a wide range of applications, including broadband optical devices, high-frequency electronic devices, and serving as a substrate for highly sensitive gas detectors and efficient catalysts. Nevertheless, production of high-quality InN thin films through epitaxy has remained a significant challenge. This is primarily due to complexities arising from the low dissociation temperature and the high N2 equilibrium pressure of InN, which lead to formation of numerous nitrogen vacancies and a propensity to generate indium metal nanoparticles. Efficacy of the indium bilayer pre-deposition method for InN film growth has been established in prior studies. In this work, we introduce a specialized hydrogen insertion method to further enhance nitridation of the indium bilayer. The corresponding kinetic mechanism has been demonstrated through theoretical simulations and practical epitaxy experiments, leading to the development of an optimized hydrogen insertion process. This research represents a substantial improvement over existing InN epitaxial methods that involve control of the indium bilayer and introduces a novel mechanism for enhancing InN heteroepitaxy.

physics, applied
Growth of Non-Polar A-Plane and Cubic InN on R-Plane Sapphire by Molecular Beam Epitaxy

Lu Hai,Schaff William J.,Eastman Lester F.,Cimalla Volker,Pezoldt Joerg,Ambacher Oliver,Wu J.,Walukiewicz Wladek

DOI: https://doi.org/10.1557/proc-798-y12.6

2004-01-01

Abstract:Growth of non-polar III-nitrides has been an important subject recently due to its potential improvement on the efficiency of III-nitride-based opto-electronic devices. Despite study of non-polar GaN and GaN-based heterostructures, there are few reports on epitaxial growth of non-polar InN, which is also an important component of the III-nitride system. In this study, we report heteroepitaxial growth of non-polar InN on r-plane sapphire substrates using plasma-assisted molecular beam epitaxy. It is found that when a GaN buffer is used, the following InN film appears to be non-polar (1120) a-plane which follows the a-plane GaN buffer. The room temperature Hall mobility of undoped a-plane InN is around 250 cm2/Vs with a carrier concentration around 6×1018 cm−3. Meanwhile, if InN film is directly deposited on r-plane sapphire without any buffer, the InN layer is found to consist of a predominant zincblende (cubic) structure along with a fraction of the wurtzite (hexagonal) phase with increasing content with proceeding growth.
Chemical Vapor Deposition Growth of Inn Nanostructures: Morphology Regulation and Field Emission Properties

Fan Zhang,Qiang Wu,Yongliang Zhang,Jianmin Zhu,Ning Liu,Jing Yang,Xizhang Wang,Zheng Hu

DOI: https://doi.org/10.1016/j.apsusc.2012.06.013

IF: 6.7

2012-01-01

Applied Surface Science

Abstract:The facile synthesis of InN nanostructures is of great importance due to their wide potential applications in (opto) electronic devices. Herein we reported the synthesis of InN nanostructures through a convenient chloride-sourced chemical vapor deposition method with simple processing and free of catalyst. The morphologies of the InN products were regulated from one-dimensional nanocones and hexagonal nanoprisms to octahedrons and four-fold-symmetrical InN hierarchical nanostructures by varying the vaporization temperature of InCl3 and deposition temperature. The formation mechanism of the InN nanostructures has been discussed on the basis of the change in InCl3 vapor pressure and the morphological evolution under different temperature. The field emission properties of the InN nanocones were evaluated due to their unique sharp apex geometry, which showed a turn on field of similar to 12 V/mu m, suggesting their potential application in field emission devices. (C) 2012 Elsevier B. V. All rights reserved.
Structural Characterization of Indium-Rich Nanoprecipitate in InGaN V-pits Formed by Annealing

Junjun Xue,Qing Cai,Baohua Zhang,Mei Ge,Dunjun Chen,Ting Zhi,Jiangwei Chen,Lianhui Wang,Rong Zhang,Youdou Zheng

DOI: https://doi.org/10.1088/1674-1056/26/11/116801

2017-01-01

Abstract:InGaN layers capped with GaN were annealed at 550 degrees C for 1 hour. During annealing, cracks appeared and dissolved InGaN penetrated through the microcracks into the V-pits to form indium-rich nanoprecipitates. Some precipitates, in-situ annealed under nitrogen ion irradiation by MBE, were confirmed to be cubic GaN on the tops of precipitates, formed by nitriding the pre-existing Ga droplets under nitrogen ions irradiation.
Graphene‐Nanorod Enhanced Quasi‐Van Der Waals Epitaxy for High Indium Composition Nitride Films

Shuo Zhang,Bingyao Liu,Fang Ren,Yue Yin,Yunyu Wang,Zhaolong Chen,Bei Jiang,Bingzhi Liu,Zhetong Liu,Jingyu Sun,Meng Liang,Jianchang Yan,Tongbo Wei,Xiaoyan Yi,Junxi Wang,Jinmin Li,Peng Gao,Zhongfan Liu,Zhiqiang Liu

DOI: https://doi.org/10.1002/smll.202100098

IF: 13.3

2021-03-31

Small

Abstract:<p>The nitride films with high indium (In) composition play a crucial role in the fabrication of In‐rich InGaN‐based optoelectronic devices. However, a major limitation is In incorporation requiring a low temperature during growth at the expense of nitride dissociation. Here, to overcome this limitation, a strain‐modulated growth method, namely the graphene (Gr)‐nanorod (NR) enhanced quasi‐van der Waals epitaxy, is proposed to increase the In composition in InGaN alloy. The lattice transparency of Gr enables constraint of in‐plane orientation of nitride film and epitaxial relationships at the heterointerface. The Gr interlayer together with NRs buffer layer substantially reduces the stress of the GaN film by 74.4%, from 0.9 to 0.23 GPa, and thus increases the In incorporation by 30.7%. The first principles calculations confirm that the release of strain accounts for the dramatic improvement. The photoluminescence peak of multiple quantum wells shifts from 461 to 497 nm and the functionally small‐sized cyan light‐emitting diodes of 7 × 9 mil<sup>2</sup> are demonstrated. These findings provide an efficient approach for the growth of In‐rich InGaN film and extend the applications of nitrides in advanced optoelectronic, photovoltaic, and thermoelectric devices.</p>

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Controllable Synthesis of One-Dimensional Aluminum Nitride Nanostructures Through Vapor-Solid Epitaxial Growth

Chun Liu,Zheng Hu,Qiang Wu,Xizhang Wang,Yi Chen,Jianmin Zhu

DOI: https://doi.org/10.1166/jno.2006.014

2006-01-01

Journal of Nanoelectronics and Optoelectronics

Abstract:Controllable synthesis of the nanostructures of group III nitrides is an important topic for potential applications in semiconductor nanotechnology due to their promising optical and electrical properties. In this article, different quasi-aligned, one-dimensional AIN nanostructures, including columnar flowers, nanocolumns,and nanocones, have been selectively synthesized via catalyst-assisted vapor-solid epitaxial growth on Co-deposited quartz plate through the reaction between AlCl3 vapor and NH3. The as-prepared hexagonal AIN products grow preferentially along the c-axis, the extent of which depends on the synthetic conditions. The growth mechanism is discussed based on the correlation among the reaction temperature, AlCl3 vapor pressure, and the morphologies of the products.
Straight and Helical InGaN Core–shell Nanowires with a High in Core Content

X. M. Cai,Y. H. Leung,K. Y. Cheung,K. H. Tam,A. B. Djurisic,M. H. Xie,H. Y. Chen,S. Gwo

DOI: https://doi.org/10.1088/0957-4484/17/9/042

IF: 3.5

2006-01-01

Nanotechnology

Abstract:In1-xGaxN nanowires were fabricated in a tube furnace by chemical vapour deposition, with Ga, In and NH3 as the starting materials and Au as the catalyst. Scanning electron microscopy showed that a mixture of straight and helical In1-xGaxN nanowires was obtained. Transmission electron microscopy (TEM) revealed that both types of nanowire exhibited core-shell structures. The crystal structure of the samples was studied by high resolution TEM and x-ray diffraction, and both cubic and hexagonal phases were found. Energy dispersive x-ray spectroscopy showed that the core had a high In content and the shell had a low In content. The nanowires were also characterized by photoluminescence. The mechanism of formation for the helical nanowires and core-shell structure is discussed.
High-Quality Gan Nanowires Synthesized Using A Cvd Approach

J.C. Wang,S.Q. Feng,D.P. Yu

DOI: https://doi.org/10.1007/s00339-002-1455-z

2002-01-01

Applied Physics A

Abstract:High-quality GaN nanowires were synthesized on a large-area Si substrate by direct reaction of gallium with ammonia using InCl3 as a catalyst. The morphology and microstructure of the resulting products were characterized using a field-emission scanning electron microscope (SEM), a high-resolution transmission electron microscope, and X-ray diffraction (XRD). XRD and electron diffraction revealed that the nanowires are of a hexagonal GaN phase with the wurtzite structure. The SEM study showed that the nanowires are straight and have a smooth morphology with lengths up to 500 μm. The present results reveal that InCl3 is an optimal catalyst in GaN nanowire production.

The synthesis and formation mechanism of nonpolar InN nanoplates

Synthesis of [100] Wurtzite InN Nanowires and [011] Zinc-Blende InN Nanorods

Synthesis and Growth of InN with Pre-deposited Indium Nanodots Method on MOCVD at Low Temperature

Indium nitride from indium iodide at low temperatures: synthesis and their optical properties

From powder to nanowire: A simple and environmentally friendly strategy for optical and electrical GaN nanowire films

Bulk-quantity synthesis of single-crystalline indium nitride nanobelts

Nonpolar Growth And Characterization Of Inn Overlayers On Vertically Oriented Gan Nanorods

Synthesis of GaN network by nitridation of hexagonal ε-Ga2O3 film

Large-scale cubic InN nanocrystals by a combined solution- and vapor-phase method under silica confinement

Synthesis Of Long Indium Nitride Nanowires With Uniform Diameters In Large Quantities

Crystalline Quality of InxAl1-xN with Different Indium Contents Around Lattice-Matched to GaN

Lattice-polarity-driven epitaxy of hexagonal semiconductor nanowires

Catalyst Synthesis and Growth of Indium Nitride Nanodots

Enhancing indium bilayer nitridation through novel hydrogen insertion process in InN epitaxy: A kinetic mechanism

Growth of Non-Polar A-Plane and Cubic InN on R-Plane Sapphire by Molecular Beam Epitaxy

Chemical Vapor Deposition Growth of Inn Nanostructures: Morphology Regulation and Field Emission Properties

Structural Characterization of Indium-Rich Nanoprecipitate in InGaN V-pits Formed by Annealing

Graphene‐Nanorod Enhanced Quasi‐Van Der Waals Epitaxy for High Indium Composition Nitride Films

Controllable Synthesis of One-Dimensional Aluminum Nitride Nanostructures Through Vapor-Solid Epitaxial Growth

Straight and Helical InGaN Core–shell Nanowires with a High in Core Content

High-Quality Gan Nanowires Synthesized Using A Cvd Approach